| Patent application number | Description | Published |
|---|
| 20080240182 | Variable Attenuator Device and Method - A new and useful attenuating device and method for attenuating a polarized laser beam is provided. At least one attenuating optic is located along, and is rotatable about, a polarized laser beam axis, and is configured to transmit and to reflect portions of the polarized laser beam. The attenuating optic provides predetermined attenuation of the polarized laser beam by changing the ratio between transmission and reflection of the polarized laser beam as a function of the incidence of the polarized laser beam on one or more partially reflective surfaces of the attenuating optic. The attenuating optic is rotatable about the polarized laser beam axis to control the incidence of the polarized laser beam on the one or more partially reflective surfaces of the attenuating optic, thereby to control the ratio between transmission and reflection of the polarized laser beam and provide a range of attenuation of the polarized laser beam. | 10-02-2008 |
| 20090262417 | 193nm Immersion Microscope - New and useful concepts are provided for the objective portion of a liquid or solid immersion microscope are provided, that uses 193 nm light for illumination and imaging of a sample, and includes a liquid or solid immersion lens configuration. The illumination and imaging can be provided, e.g. with (a) a liquid immersion lens with a final objective lens element that comprises a lutetium aluminum garnet (LuAg) lens element, a barium lithium fluoride (BaLiF) lens element, or a fused silica lens element, and a liquid immersion layer that has an index of refraction that is equal to or greater than the index of refraction of water at a wavelength of approximately 193 nm, or (b) a solid immersion lens with a final objective lens element that has an index of refraction greater than or equal to the index of refraction of fused silica at a wavelength of approximately 193 nm. | 10-22-2009 |
| 20090303454 | EXPOSURE APPARATUS WITH A SCANNING ILLUMINATION BEAM - An exposure apparatus ( | 12-10-2009 |
| 20090305171 | APPARATUS FOR SCANNING SITES ON A WAFER ALONG A SHORT DIMENSION OF THE SITES - An exposure apparatus ( | 12-10-2009 |
| 20090316131 | EXPOSURE APPARATUS THAT UTILIZES MULTIPLE MASKS - An exposure apparatus ( | 12-24-2009 |
| 20100053738 | High NA Catadioptric Imaging Optics For Imaging A reticle to a Pair of Imaging Locations - New and useful concepts for an imaging optical system configured to simultaneously image a reticle to a pair of imaging locations are provided, where the imaging optics comprise a pair of arms, each of which includes catadioptric imaging optics. In addition, the imaging optics are preferably designed to image a reticle simultaneously to the pair of imaging locations, at a numerical aperture of at least 1.3, and without obscuration of light by the imaging optics. | 03-04-2010 |
| 20100059657 | System and Method Producing Data For Correcting Autofocus Error in An Imaging Optical System - A new and useful system and method is provided, for correcting autofocus errors in an imaging optical system. In a system or method according to the present invention (a) an optical test assembly with an input portion directs light at a wafer surface under conditions described by ellipsometric input beam conditioning parameters, and an output/detection portion receives reflected light from the wafer under conditions described by ellipsometric output beam conditioning parameters, and produces output based on the received reflected light; and (b) a processing control circuit processes the output of the optical test assembly, and produces autofocus correction data based on ellipsometric analysis of (i) the ellipsometric input and output beam conditioning parameters and (ii) the output of the optical test assembly. | 03-11-2010 |
| 20100091257 | Optical Imaging System and Method for Imaging Up to Four Reticles to a Single Imaging Location - A catadioptric optical imaging system and method is provided, in which up to four (4) reticles are imaged to a single imaging location (e.g. for imaging substrates), in a manner designed to provide high throughput, with a relatively high resolution, and with substrates whose size may approach 450 mm. | 04-15-2010 |
