| Patent application number | Description | Published |
| 20100144858 | Treatment of movement disorders with a metabotropic glutamate 4 receptor positive allosteric modulator - An mGluR4 receptor positive allosteric modulator is useful, alone or in combination with a neuroleptic agent, for treating or preventing movement disorders such as Parkinson's disease, dyskinesia, tardive dyskinesia, drug-induced parkinsonism, postencephalitic parkinsonism, progressive supranuclear palsy, multiple system atrophy, corticobasal degeneration, parkinsonian-ALS dementia complex, basal ganglia calcification, akinesia, akinetic-rigid syndrome, bradykinesia, dystonia, medication-induced parkinsonian, Gilles de la Tourette syndrome, Huntington's disease, tremor, chorea, myoclonus, tick disorder, and dystonia. | 06-10-2010 |
| 20110081297 | Novel Substituted Pyrazoles, 1,2,4-Oxadiazoles, and 1,3,4-Oxadiazoles - The present invention relates to novel amyloid binding compounds and methods for measuring effects of the compounds, by measuring changes of amyloid plaque level in living patients. More specifically, the present invention relates to a method of using the compounds of this invention as tracers in positron emission tomography (PET) imaging to study amyloid deposits in brain in vivo to allow diagnosis of Alzheimer's disease. Thus, the present invention relates to use of the novel amyloid binding compounds as a diagnostic. The invention further relates to a method of measuring clinical efficacy of Alzheimer's disease therapeutic agents. Specifically, the present invention relates to novel aryl or heteroaryl substituted pyrazole derivatives, compositions, and therapeutic uses and processes for making such compounds. | 04-07-2011 |
| 20110085985 | NOVEL SUBSTITUTED AZABENZOXAZOLES - The present invention relates to novel amyloid binding compounds of formula (I) and methods for measuring effects of the compounds, by measuring changes of amyloid plaque level in living patients. More specifically, the present invention relates to a method of using the compounds of this invention as tracers in positron emission tomography (PET/) imaging to study amyloid deposits in brain in vivo to allow diagnosis of Alzheimer's disease. Thus, the present invention relates to use of the novel amyloid binding compounds as a diagnostic. The invention further relates to a method of measuring clinical efficacy of Alzheimer's disease therapeutic agents. Specifically, the present invention relates to novel aryl or heteroaryl substituted azabenzoxazole derivatives, compositions, and therapeutic uses and processes for making such compounds, or a pharmaceutically acceptable salt, solvate or in vivo hydrolysable ester thereof, wherein: X is O or S; A and Y independently are N, or CH; | 04-14-2011 |
| 20110212031 | NOVEL SUBSTITUTED AZABENZOXAZOLES - The present invention relates to novel MAO-B binding compounds and methods for measuring effects of the compounds, by measuring changes of MAO-B levels in living patients. More specifically, the present invention relates to use of the compounds of this invention as therapeutic agents for inhibition of MAO-B activity as well as a method of using the compounds of this invention as tracers in positron emission tomography (PET) imaging to study MAO-B levels in brain in vivo to allow diagnosis of Alzheimer's disease. Thus, the present invention relates to use of the novel MAO-B binding compounds as diagnostic, as we a therapeutic, agents. The invention further relates to a method of measuring clinical efficacy of Alzheimer's disease therapeutic agents. Specifically, the present invention relates to novel aryl or heteroaryl substituted azabenzoxazole derivatives, compositions, and therapeutic uses and processes for making such compounds. | 09-01-2011 |
| Patent application number | Description | Published |
| 20110278464 | RADIATION DETECTOR AND FABRICATION PROCESS - A monolithic integrated radiation detector includes a photodetector and a scintillator deposited directly on the photodetector. Preferably the photodetector is silicon and the scintillator is a rare earth phosphor. The rare earth phosphor is crystal lattice matched to the silicon by a transitional layer epitaxially grown therebetween. | 11-17-2011 |
| 20120019902 | INTERGRATED PUMP LASER AND RARE EARTH WAVEGUIDE AMPLIFIER - A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics. | 01-26-2012 |
| 20120145243 | SOLAR CELLS WITH MAGNETICALLY ENHANCED UP-CONVERSION - A method of magnetically enhancing up-conversion components includes providing at least one of up-conversion material and sensitizer material (i.e. up-conversion components), generally in conjunction with a semiconductor solar cell, and positioning magnetic apparatus adjacent the up-conversion components to supply a magnetic field to the up-conversion components. The magnetic field has an intensity and direction selected to enhance operation of the up-conversion components. | 06-14-2012 |
| 20120147906 | LASER COOLING OF MODIFIED SOI WAFER - A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling. | 06-14-2012 |