Patent application number | Description | Published |
20100079147 | INLINE INSPECTION OF PHOTOVOLTAICS FOR ELECTRICAL DEFECTS - A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material. | 04-01-2010 |
20100188655 | TDI Sensor Modules With Localized Driving And Signal Processing Circuitry For High Speed Inspection - An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage. | 07-29-2010 |
20100301437 | Anti-Reflective Coating For Sensors Suitable For High Throughput Inspection Systems - A sensor for capturing light at the ultraviolet (UV) or the deep UV wavelength includes a multi-layer anti-reflective coating (ARC). In a two-layer ARC, the first layer is formed on either the substrate or the circuitry layer, and the second layer is formed on the first layer and receives the light as an incident light beam. Notably, the first layer is at least twice as thick as the second layer, thereby minimizing an electrical field at a substrate surface due to charge trapping in the ARC. In a four-layer ARC, the third layer is formed on the second layer and the fourth layer is formed on the third layer. The first and third layers may be formed from the same material, and the second and fourth layers may be formed from materials having same/similar indexes of refraction. In this case, the first layer is at least twice as thick as any of the second, third, or fourth layers. | 12-02-2010 |
20110073982 | Inspection system using back side illuminated linear sensor - An improved inspection system using back-side illuminated linear sensing for propagating charge through a sensor is provided. Focusing optics may be used with a back side illuminated linear sensor to inspect specimens, the back side illuminated linear sensor operating to advance an accumulated charge from one side of each pixel to the other side. The design comprises controlling voltage profiles across pixel gates from one side to the other side in order to advance charge between to a charge accumulation region. Controlling voltage profiles comprises attaching a continuous polysilicon gate across each pixel within a back side illuminated linear sensor array. Polysilicon gates and voltages applied thereto enable efficient electron advancement using a controlled voltage profile. | 03-31-2011 |
20110116077 | EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers - Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long. | 05-19-2011 |
20110133750 | INLINE INSPECTION OF PHOTOVOLTAICS FOR ELECTRICAL DEFECTS - A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material. | 06-09-2011 |
Patent application number | Description | Published |
20090121890 | Proximity-Sensor Supporting Multiple Application Services - A personal digital key (e.g., which can be carried by a human) contains a memory having different service blocks. Each service block is accessible by a corresponding service block access key. As the personal digital key (PDK) moves around, it is detected by sensors. The sensors report position data, thus enabling location tracking of the PDK. The sensors also provide a data path to various applications. An application that has access to a service block access key can therefore access the corresponding service block on the PDK. The sensors themselves may also contain service block access keys. | 05-14-2009 |
20120300753 | Dynamic Real-Time Tiered Client Access - Wireless client devices within a wireless network exchange data with other wireless devices during particular time slots determined by the network. More particularly, the system generates and wirelessly broadcasts synchronization information to the client devices, where the synchronization information contains individual masks to be applied to bit fields of individual client devices, where said time slots are determined in accordance with the masked bit fields. In such a manner, client devices can be coordinated to communicate with the system in a dynamic real-time tiered manner. | 11-29-2012 |
20130219186 | Personal Digital Key Initialization and Registration for Secure Transactions - A system and method provide efficient, secure, and highly reliable authentication for transaction processing and/or access control applications. A personal digital key (PDK) is programmed using a trusted programming device to initialize and/or register the PDK for use. In one embodiment, the initialization and registration processes are administered by a specialized trusted Notary to ensure the processes follow defined security procedures. In a biometric initialization, the programming device acquires a biometric input from a user and writes the biometric data to a tamperproof memory in the PDK. In registration, the Programmer communicates to one or more remote registries to create or update entries associated with the user PDK. Once initialized and registered, the PDK can be used for various levels of secure authentication processes. | 08-22-2013 |
20130315210 | Dynamic Real-Time Tiered Client Access - Wireless client devices within a wireless network exchange data with other wireless devices during particular time slots determined by the network. More particularly, the system generates and wirelessly broadcasts synchronization information to the client devices, where the synchronization information contains individual masks to be applied to bit fields of individual client devices, where said time slots are determined in accordance with the masked bit fields. In such a manner, client devices can be coordinated to communicate with the system in a dynamic real-time tiered manner. | 11-28-2013 |
20150026480 | Personal Digital Key Initialization And Registration For Secure Transactions - A system and method provide efficient, secure, and highly reliable authentication for transaction processing and/or access control applications. A personal digital key (PDK) is programmed using a trusted programming device to initialize and/or register the PDK for use. In one embodiment, the initialization and registration processes are administered by a specialized trusted Notary to ensure the processes follow defined security procedures. In a biometric initialization, the programming device acquires a biometric input from a user and writes the biometric data to a tamperproof memory in the PDK. In registration, the Programmer communicates to one or more remote registries to create or update entries associated with the user PDK. Once initialized and registered, the PDK can be used for various levels of secure authentication processes. | 01-22-2015 |
Patent application number | Description | Published |
20120314286 | Semiconductor Inspection And Metrology System Using Laser Pulse Multiplier - A pulse multiplier includes a polarizing beam splitter, a wave plate, and a set of mirrors. The polarizing beam splitter receives an input laser pulse. The wave plate receives light from the polarized beam splitter and generates a first set of pulses and a second set of pulses. The first set of pulses has a different polarization than the second set of pulses. The polarizing beam splitter, the wave plate, and the set of mirrors create a ring cavity. The polarizing beam splitter transmits the first set of pulses as an output of the pulse multiplier and reflects the second set of pulses into the ring cavity. This pulse multiplier can inexpensively reduce the peak power per pulse while increasing the number of pulses per second with minimal total power loss. | 12-13-2012 |
20130148112 | Electron-Bombarded Charge-Coupled Device And Inspection Systems Using EBCCD Detectors - A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap. | 06-13-2013 |
20130176552 | INTERPOSER BASED IMAGING SENSOR FOR HIGH-SPEED IMAGE ACQUISITION AND INSPECTION SYSTEMS - The present invention includes an interposer disposed on a surface of a substrate, a light sensing array sensor disposed on the interposer, the light sensing array sensor being back-thinned and configured for back illumination, the light sensing array sensor including columns of pixels, one or more amplification circuitry elements configured to amplify an output of the light sensing array sensor, the amplification circuits being operatively connected to the interposer, one or more analog-to-digital conversion circuitry elements configured to convert an output of the light sensing array sensor to a digital signal, the ADC circuitry elements being operatively connected to the interposer, one or more driver circuitry elements configured to drive a clock or control signal of the array sensor, the interposer configured to electrically couple at least two of the light sensing array sensor, the amplification circuits, the conversion circuits, the driver circuits, or one or more additional circuits. | 07-11-2013 |
20130194445 | Integrated Multi-Channel Analog Front End And Digitizer For High Speed Imaging Applications - A module for high speed image processing includes an image sensor for generating a plurality of analog outputs representing an image and a plurality of HDDs for concurrently processing the plurality of analog outputs. Each HDD is an integrated circuit configured to process in parallel a predetermined set of the analog outputs. Each channel of the HDD can include an AFE for conditioning a signal representing one sensor analog output, an ADC for converting a conditioned signal into a digital signal, and a data formatting block for calibrations and formatting the digital signal for transport to an off-chip device. The HDDs and drive electronics are combined with the image sensor into one package to optimize signal integrity and high dynamic range, and to achieve high data rates through use of synchronized HDD channels. Combining multiple modules results in a highly scalable imaging subsystem optimized for inspection and metrology applications. | 08-01-2013 |
20130264481 | Back-Illuminated Sensor With Boron Layer - An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system. | 10-10-2013 |
20140001370 | EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers | 01-02-2014 |
20140043463 | TDI Sensor Modules With Localized Driving And Signal Processing Circuitry For High Speed Inspection - An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage. | 02-13-2014 |
20140158864 | Method And Apparatus For High Speed Acquisition Of Moving Images Using Pulsed Illumination - A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction. | 06-12-2014 |
20140217299 | EUV High Throughput Inspection System For Defect Detection On Patterned EUV Masks, Mask Blanks, And Wafers - Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long. | 08-07-2014 |
20140240562 | Integrated Multi-Channel Analog Front End And Digitizer For High Speed Imaging Applications - A module for high speed image processing includes an image sensor for generating a plurality of analog outputs representing an image and a plurality of HDDs for concurrently processing the plurality of analog outputs. Each HDD is an integrated circuit configured to process in parallel a predetermined set of the analog outputs. Each channel of the HDD can include an AFE for conditioning a signal representing one sensor analog output, an ADC for converting a conditioned signal into a digital signal, and a data formatting block for calibrations and formatting the digital signal for transport to an off-chip device. The HDDs and drive electronics are combined with the image sensor into one package to optimize signal integrity and high dynamic range, and to achieve high data rates through use of synchronized HDD channels. Combining multiple modules results in a highly scalable imaging subsystem optimized for inspection and metrology applications. | 08-28-2014 |
20140291493 | Photomultiplier Tube, Image Sensor, And an Inspection System Using A PMT Or Image Sensor - A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface. | 10-02-2014 |