Patent application number | Description | Published |
20120238073 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 09-20-2012 |
20130065378 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 03-14-2013 |
20130230968 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 09-05-2013 |
20130230969 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 09-05-2013 |
20130230970 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 09-05-2013 |
20130230971 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma. | 09-05-2013 |
20130230972 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 09-05-2013 |
20130230973 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma. | 09-05-2013 |
20130230974 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 09-05-2013 |
20130273237 | Method to Determine the Thickness of a Thin Film During Plasma Deposition - The present invention provides a method to determine the thickness of a thin film during deposition. A target film thickness is set. A substrate is placed within a deposition system. The thin film is deposited onto the substrate within the deposition system. Radiation reflected from the substrate is monitored at multiple wavelengths during the deposition of the thin film using standard OEI techniques. A value derived from the reflected radiation is monitored. A time is detected at which the derived value is at a target value. A film thickness is calculated at the detected times to generate data. A mathematical analysis is performed on the generated data to determine an equation for deposited film thickness versus time. The calculated equation for deposited film thickness versus time is used to achieve the target film thickness. | 10-17-2013 |
20140150246 | Apparatus and Method for Carrying Substrates - The present invention provides a method and an apparatus for carrying at least one substrate for plasma processing. The method and apparatus comprising a carrier for transporting the substrate, that is located unbonded on the carrier, onto a substrate support within a plasma system for plasma processing. An electrostatic clamp, that is coupled to the substrate support, electrostatically secures the substrate to the substrate support through the carrier during plasma processing. | 06-05-2014 |
20140154869 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma. | 06-05-2014 |
20140235034 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 08-21-2014 |