| Patent application number | Description | Published |
|---|
| 20080299864 | PROCESS FOR IMPROVING THE EMISSION OF ELECTRON FIELD EMITTERS - This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter. | 12-04-2008 |
| 20090104834 | PROCESS FOR IMPROVING THE EMISSION OF ELECTRON FIELD EMITTERS - This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter. | 04-23-2009 |
| 20090314647 | METHOD FOR THE ELECTROCHEMICAL DEPOSITION OF CARBON NANOTUBES - This invention relates to the electrochemical deposition of carbon nanotubes (“CNTs”) on a substrate using an electrochemical cell. A dispersion of a complex of CNTs and an anionic polymer is neutralized and thereby caused to deposit on the anode plate of the cell. | 12-24-2009 |
| 20100072879 | FIELD EMISSION DEVICE WITH ANODE COATING - A field emission device in which a protective material is employed in relation to the anode wherein the protective material is selected from one or more members of the group consisting of amorphous carbon, graphite, diamond-like carbon, fullerenes, carbon nanotubes, a (co)polymer and an organic coating compound. | 03-25-2010 |
| 20100119435 | Processes for growing carbon nanotubes in the absence of catalysts - Processes for increasing the production rate of single-wall carbon nanotubes using a disordered carbon target are disclosed. The processes use a disordered carbon target and include vaporization of the target in the presence of a non-oxidizing gas. The single-wall nanotubes produced can be incorporated into electronic devices such as diodes and transistors. | 05-13-2010 |
| 20100239490 | Processes for growing carbon nanotubes using disordered carbon target - Processes for producing single-wall carbon nanotubes without catalysts are provided. The nanotubes are produced by vaporizing silicon carbide and carbon. | 09-23-2010 |
| 20110006271 | DIELECTRIC COMPOSITION WITH REDUCED RESISTANCE - This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission. | 01-13-2011 |
| 20110101859 | FIELD EMISSION DEVICE WITH PROTECTING VAPOR - A field emission device in which a protectin vapor is present in an evacuated space between a field emission cathode assembly and an anode. The protectin vapor may be one or more hydrogen-containing gases suc as a gas containing M—H bonds where M may be C, Si, B, Al or P. The protecting vapor has within the evacuated space a partial pressure greater than about 10 | 05-05-2011 |
