| Patent application number | Description | Published |
|---|
| 20080296567 | METHOD OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS - A method of making a thin film transistor comprising a zinc-oxide-containing semiconductor material and spaced apart first and second electrodes in contact with the material. The co-generation of high quality zinc oxide semiconductor films and contact electrodes is obtained, at low temperatures, using non-vacuum conditions, silver nanoparticles are deposited to form the source and drain and, upon heating, converted to conducting metal. Such an in-situ formation of the silver metal/zinc oxide interface provides superior transistor activity compared to evaporated silver. | 12-04-2008 |
| 20080299771 | METHODS OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS AND TRANSISTORS MADE THEREBY - A method of making a thin film transistor comprising a thin film semiconductor element comprised of a transparent zinc-oxide-based semiconductor material, wherein spaced apart first and second contacts in contact with said material are position on either side of a channel in the thin film semiconductor element such that the elongated sides of the channel are aligned with an underlying gate structure. The method can be accomplished while maintaining the substrate temperature at no more than 300° C. during fabrication. | 12-04-2008 |
| 20080303037 | METHODS OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS AND TRANSISTORS MADE THEREBY - A method of making a thin film transistor comprising a thin film semiconductor element comprised of a transparent zinc-oxide-based semiconductor material, wherein spaced apart first and second contacts in contact with said material are positioned on either side of a channel in the thin film semiconductor element such that the elongated sides of the channel are aligned with an underlying gate structure. The method can be accomplished while maintaining the substrate temperature at no more than 300° C. during fabrication. | 12-11-2008 |
| 20090078204 | DEPOSITION SYSTEM FOR THIN FILM FORMATION - An apparatus for maintaining the alignment or positional relationship between at least two coating modules in an ALD system, the apparatus comprising a plurality of coating modules in a coating section, at least a first bar and a second bar for supporting the coating modules, and at least a first bar mounting structure and a second bar mounting structure for supporting the bars, wherein each of the coating modules are supported by the first bar and the second bar, and wherein the combination of the at least two coating modules and the first bar and the second bar define a coating section profile for the output faces of the coating modules. Also disclosed is a process for making such apparatus. | 03-26-2009 |
| 20090081356 | PROCESS FOR FORMING THIN FILM ENCAPSULATION LAYERS - A process is disclosed for making a thin film encapsulation package for an OLED device by depositing a thin film material on an OLED device to be encapsulated, comprising simultaneously directing a series of gas flows along substantially parallel elongated output openings, wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material to form an encapsulating thin film, wherein the first reactive gaseous material is a volatile organo-metal precursor compound. The process is carried out substantially at or above atmospheric pressure, and the temperature of the substrate during deposition is under 250° C. | 03-26-2009 |
| 20090081366 | DELIVERY DEVICE FOR DEPOSITION - A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates, superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed. | 03-26-2009 |
| 20090081374 | ORGANOSILOXANE MATERIALS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS - An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 03-26-2009 |
| 20090081826 | PROCESS FOR MAKING DOPED ZINC OXIDE - The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material. | 03-26-2009 |
| 20090081827 | PROCESS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS - An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 03-26-2009 |
| 20090081842 | PROCESS FOR ATOMIC LAYER DEPOSITION - The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process. | 03-26-2009 |
| 20090081883 | PROCESS FOR DEPOSITING ORGANIC MATERIALS - A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film. | 03-26-2009 |
| 20090081885 | DEPOSITION SYSTEM FOR THIN FILM FORMATION - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed. | 03-26-2009 |
| 20090081886 | SYSTEM FOR THIN FILM DEPOSITION UTILIZING COMPENSATING FORCES - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed. | 03-26-2009 |
| 20090130397 | Multicolor mask - The invention relates to a process for forming a stacked transparent structure comprising providing a support, coating one side of said support with a multicolored mask, coating the other side of the support with a layer curable by visible light, and exposing the light-curable layer through the mask with visible light to cure the layer curable by light in exposed portions to form a cured pattern. | 05-21-2009 |
| 20090130600 | Multicolored mask process for making display circuitry - A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern. | 05-21-2009 |
| 20090130608 | PHOTOPATTERNABLE DEPOSITION INHIBITOR CONTAINING SILOXANE - An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 05-21-2009 |
| 20090130609 | Colored mask combined with selective area deposition - The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material. | 05-21-2009 |
| 20090130610 | Integrated color mask - The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer. | 05-21-2009 |
| 20090130858 | DEPOSITION SYSTEM AND METHOD USING A DELIVERY HEAD SEPARATED FROM A SUBSTRATE BY GAS PRESSURE - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed. | 05-21-2009 |
| 20090217878 | SYSTEM FOR THIN FILM DEPOSITION UTILIZING COMPENSATING FORCES - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed. | 09-03-2009 |
| 20100120197 | METHODS OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS - A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication. | 05-13-2010 |
| 20100248423 | DELIVERY DEVICE COMPRISING GAS DIFFUSER FOR THIN FILM DEPOSITION - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed. | 09-30-2010 |
| 20110097487 | FLUID DISTRIBUTION MANIFOLD INCLUDING BONDED PLATES - A fluid distribution manifold includes a first plate and a second plate. At least a portion of at least the first plate and the second plate define a relief pattern. A metal bonding agent is disposed between the first plate and the second plate such that the first plate and the second plate form a fluid flow directing pattern defined by the relief pattern. | 04-28-2011 |
| 20110097488 | FLUID DISTRIBUTION MANIFOLD INCLUDING MIRRORED FINISH PLATE - A fluid distribution manifold includes a first plate and a second plate. At least a portion of at least the first plate and the second plate define a relief pattern. At least one of the first plate and the second plate include a mirrored surface finish. A bonding agent is disposed between the first plate and the second plate such that the first plate and the second plate form a fluid flow directing pattern defined by the relief pattern. | 04-28-2011 |
| 20110097489 | DISTRIBUTION MANIFOLD INCLUDING MULTIPLE FLUID COMMUNICATION PORTS - A fluid conveyance device for thin film material deposition includes a fluid distribution manifold, a primary chamber, and a secondary fluid source. The fluid distribution manifold includes an output face that is connected in fluid communication to the primary chamber. The secondary fluid source is connected in fluid communication to the primary chamber through a plurality of conveyance ports. | 04-28-2011 |
| 20110097490 | FLUID DISTRIBUTION MANIFOLD INCLUDING COMPLIANT PLATES - A fluid distribution manifold includes a first plate and a second plate. The first plate includes a length dimension, a width dimension, and a thickness that allows the first plate to be deformable over at least one of the length dimension and the width dimension of the first plate. The second plate includes a length dimension, a width dimension, and a thickness that allows the second plate to be deformable over at least one of the length dimension and the width dimension of the second plate. At least a portion of at least the first plate and the second plate define a relief pattern that defines a fluid flow directing path. The first plate and the second plate are bonded together to form a non-planar shape in a height dimension along at least one of the length dimension and the width dimension. | 04-28-2011 |
| 20110097491 | CONVEYANCE SYSTEM INCLUDING OPPOSED FLUID DISTRIBUTION MANIFOLDS - A fluid conveyance system for thin film material deposition includes a first fluid distribution manifold and a second distribution manifold. The first fluid distribution manifold includes an output face that includes a plurality of elongated slots. The plurality of elongated slots includes a source slot and an exhaust slot. The second fluid distribution manifold includes an output face that includes a plurality of openings. The plurality of openings include a source opening and an exhaust opening. The second fluid distribution manifold is positioned spaced apart from and opposite the first fluid distribution manifold such that the source opening of the output face of the second fluid distribution manifold mirrors the source slot of the output face of the first fluid distribution manifold and the exhaust opening of the output face of the second fluid distribution manifold mirrors the exhaust slot of the output face of the first fluid distribution manifold. | 04-28-2011 |
| 20110097492 | FLUID DISTRIBUTION MANIFOLD OPERATING STATE MANAGEMENT SYSTEM - A fluid conveyance system for thin film material deposition is provided. A first fluid distribution manifold includes an output face that includes a plurality of elongated slots. The plurality of elongated slots include a source slot and an exhaust slot. A gas source is in fluid communication with the source slot. The gas source is configured to provide a gas to the output face of the distribution manifold. A gas receiving chamber is in fluid communication with the exhaust slot. The gas receiving chamber is configured to collect the gas provided to the output face of the distribution manifold through the exhaust slot. A sensor positioned to sense a parameter of the gas traveling from the gas source to the gas receiving chamber. A controller is connected in electrical communication with the sensor. The controller is configured to modify an operating parameter of the conveyance system based on data received from the sensor. | 04-28-2011 |
| 20110097493 | FLUID DISTRIBUTION MANIFOLD INCLUDING NON-PARALLEL NON-PERPENDICULAR SLOTS - A fluid conveyance device for thin film material deposition includes a substrate transport mechanism that causes a substrate to travels in a direction. A fluid distribution manifold includes an output face. The output face includes a plurality of elongated slots. At least one of the elongated slots includes a portion that is non-perpendicular and non-parallel relative to the direction of substrate travel. | 04-28-2011 |
| 20110097494 | FLUID CONVEYANCE SYSTEM INCLUDING FLEXIBLE RETAINING MECHANISM - A fluid conveyance system for thin film material deposition includes a fluid distribution manifold and a substrate transport mechanism. The fluid distribution manifold includes an output face that includes a plurality of elongated slots. The output face of the fluid distribution manifold is positioned opposite a first surface of the substrate such that the elongated slots face the first surface of the substrate and are positioned proximate to the first surface of the substrate. The substrate transport mechanism causes a substrate to travel in a direction and includes a flexible mechanism that contacts a second surface of the substrate in a region that is proximate to the output face of the fluid distribution manifold. | 04-28-2011 |
| 20110120542 | METHOD FOR SELECTIVE DEPOSITION AND DEVICES - A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic poly(vinyl alcohol) having a degree of hydrolysis of less than 95%. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 05-26-2011 |
| 20110120543 | METHOD FOR SELECTIVE DEPOSITION AND DEVICES - A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that that has in its backbone, side chains, or both backbone and side chains, multiple hydrophilic groups that are represented by the following structure: | 05-26-2011 |
| 20110120544 | DEPOSITION INHIBITOR COMPOSITION AND METHOD OF USE - A deposition inhibitor composition includes two compatible solvents. The first solvent has a vapor pressure of at least 10 mm Hg at room temperature and the second solvent has a vapor pressure of less than that of the first solvent. The composition further includes a hydrophilic deposition inhibitor material that is dissolved in the composition. This material is soluble in an aqueous solution that comprises at least 50% by weight of water and has a free acid content of less than 2.5 meq/g. This composition is useful to provide a deposition inhibitor pattern for chemical vapor deposition methods such as an atomic-layer-deposition method for forming a patterned thin film includes applying a hydrophilic deposition inhibitor material to a substrate. | 05-26-2011 |
| 20110120757 | METHOD FOR SELECTIVE DEPOSITION AND DEVICES - A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is has in its backbone, side chains, or both backbone and side chains, multiple secondary or tertiary amide groups that are represented by the following acetamide structure: >N—C(═O)—. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 05-26-2011 |
| 20110121283 | METHOD FOR SELECTIVE DEPOSITION AND DEVICES - A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 05-26-2011 |
| 20110122552 | METHOD FOR SELECTIVE DEPOSITION AND DEVICES - A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 05-26-2011 |
