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David Eaglesham, Perrysburg US
David Eaglesham, Perrysburg, OH US
| Patent application number | Description | Published |
|---|---|---|
| 20090078318 | Photovoltaic Devices Including An Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 03-26-2009 |
| 20090211637 | Photovoltaic devices including heterojunctions - A photovoltaic cell can include a heterojunction between semiconductor layers. | 08-27-2009 |
| 20090255578 | Plasma-treated photovoltaic devices - A method of manufacturing a thin film photovoltaic device includes depositing a first compound semiconductor layer on a substrate and exposing the device to plasma, the plasma treating the layer. | 10-15-2009 |
| 20100059112 | Photovoltaic Devices Including Mg-Doped Semiconductor Films - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 03-11-2010 |
| 20100116337 | Tandem Module Photovoltaic Devices Including An Organic Module - A tandem module photovoltaic cell can include an organic module in parallel with a semiconductor module. | 05-13-2010 |
| 20100186812 | PHOTOVOLTAIC DEVICES INCLUDING COPPER INDIUM GALLIUM SELENIDE - A copper indium gallium selenide photovoltaic cell can include a substrate having a transparent conductive oxide layer. The copper indium gallium selenide can be deposited using sputtering and vapor transport deposition. | 07-29-2010 |
| 20100282320 | Photovoltaic Devices Including an Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 11-11-2010 |
| 20100319775 | Method and Apparatus for Annealing a Deposited Cadmium Stannate Layer - A method for manufacturing a multi-layered structure can include annealing a stack, where the annealing can include heating the stack in the presence of an inert gas, and where the stack includes a layer including cadmium and tin. | 12-23-2010 |
| 20110136294 | Plasma-Treated Photovoltaic Devices - A method of manufacturing a thin film photovoltaic device includes depositing a first compound semiconductor layer on a substrate and exposing the device to plasma, the plasma treating the layer. | 06-09-2011 |