| Patent application number | Description | Published |
|---|
| 20080202917 | Method for Manufacturing a Magnetoresistive Multilayer Film - This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used. | 08-28-2008 |
| 20080241596 | Magnetoresistive Multilayer Film - This application discloses a magnetoresistive multilayer film having the structure where an antiferromagnetic layer, a pinned-magnetization layer, a non-magnetic spacer layer and a free-magnetization layer are laminated in this order. An opposite-side layer is provided on the side of the antiferromagnetic layer opposite to the pined-magnetization layer. The opposite-side layer has components of nickel and chromium. An atomic numeral ratio of chromium in the opposite-side layer is preferably not less than 41% and not more than 70%, more preferably not less than 43%. | 10-02-2008 |
| 20100025363 | SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded. | 02-04-2010 |
| 20100028529 | SUBSTRATE PROCESSING APPARATUS, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other. | 02-04-2010 |
| 20100189532 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 07-29-2010 |
| 20100215460 | INLINE-TYPE WAFER CONVEYANCE DEVICE - A structure is provided in which a load lock chamber ( | 08-26-2010 |
| 20100239394 | INLINE-TYPE WAFER CONVEYANCE DEVICE - There are comprised a load chamber ( | 09-23-2010 |
| 20110227018 | MAGNETORESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND STORAGE MEDIUM USED IN THE MANUFACTURING METHOD - An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art and a method of manufacturing the same. | 09-22-2011 |
