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Daval
Bertrand Daval, Clermont-Ferrand FR
| Patent application number | Description | Published |
|---|---|---|
| 20120073723 | Tire with Improved Beads - Tire comprising two beads ( | 03-29-2012 |
| 20120073724 | Tire with Improved Beads - A tire comprising two beads ( | 03-29-2012 |
Christian Daval, Saint Cezaire Sur Siagne FR
| Patent application number | Description | Published |
|---|---|---|
| 20110147532 | Device for Deploying and Aiming Structural Elements in a Space Environment - A device for deploying and aiming structural elements designed to be placed in Earth includes at least one locking/unlocking device making it possible to deactivate the first coupling mode and to activate a second coupling mode allowing a portion of the device to be aimed at a target. The device uses: a plurality of structural elements linked together by articulations, the assembly forming an articulated arm linked to a payload via a root section; the articulations having at least one pivoting connection making it possible to have two consecutive structural elements pivot relative to one another; a motor making it possible to activate at least one pivoting connection of an articulation; and a system for coupling the articulations making it possible to link the pivoting of all of the structural elements comprising a first coupling mode. | 06-23-2011 |
Christophe Daval, Choisy Le Roi FR
| Patent application number | Description | Published |
|---|---|---|
| 20090304864 | POWDER OF FERMENTED MILK OR OF YOGURT WITH A HIGH DENSITY OF LACTIC FERMENTS - The present application relates to a fermented milk or yoghurt powder which contains very high contents of | 12-10-2009 |
Nicolas Daval, Grenoble FR
| Patent application number | Description | Published |
|---|---|---|
| 20090023267 | METHOD OF REDUCING ROUGHNESS OF A THICK INSULATING LAYER - A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radiofrequency generator applying to the insulator layer a power density greater than 0.6 W/cm | 01-22-2009 |
Nicolas Daval, Pleasantville, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20110140230 | MANUFACTURE OF THIN SILICON-ON-INSULATOR (SOI) STRUCTURES - The present invention relates to a method of forming a SOI structure having a thin silicon layer by forming a first etch stop layer on a donor substrate, forming a second etch stop layer on the first etch stop layer, wherein the material of the second etch stop layer differs from the material of the first etch stop layer, forming a thin silicon layer on the second etch stop layer, preferably by epitaxy, and bonding the intermediate structure to a target substrate, followed by detaching the donor substrate by splitting initiated in the first etch stop layer at a weakened region and removing the remaining material of the etch stop layers to produce a final ETSOI structure. The invention also relates to the ETSOI structure produces by the described method. | 06-16-2011 |
| 20110183493 | PROCESS FOR MANUFACTURING A STRUCTURE COMPRISING A GERMANIUM LAYER ON A SUBSTRATE - The present invention relates to a process for manufacturing a structure comprising a germanium layer ( | 07-28-2011 |