Patent application number | Description | Published |
20140379157 | Converter Station Power Set Point Analysis System and Method - Converter stations have real and reactive power set points initially determined as part of a main loadflow analysis routinely performed on the AC power system connected to the converter stations. Viable real and/or reactive power set points for the converter stations can be identified by calculating real and/or reactive power set point candidates for the converter stations before the main loadflow analysis is performed again on the AC power system. The power set point candidates are calculated based on information determined as part of a previous iteration of the main loadflow analysis on the AC power system. The power set point candidates which violate an operating constraint imposed on the AC power system are identified, and a region of valid power set points is defined for the converter stations that excludes the power set point candidates which violate an operating constraint imposed on the AC power system. | 12-25-2014 |
20150108755 | Auxiliary Power System for Turbine-Based Energy Generation System - A turbine-based energy generation system includes an electric generator and auxiliary load. A power system for the turbine-based energy generation system includes a main converter and an auxiliary converter. The main converter is operable to deliver power generated by the electric generator to a power collection system external to the turbine-based energy generation system when the main converter is coupled to the generator. The main converter is also operable to deliver power provided from the power collection system to the auxiliary converter when the main converter is decoupled from the generator. The auxiliary converter is operable to deliver power generated by the electric generator to the auxiliary load when the auxiliary converter is coupled to the generator. The auxiliary converter is also operable to deliver the power provided by the main converter from the power collection system to the auxiliary load when the auxiliary converter is decoupled from the generator. | 04-23-2015 |
20150260162 | Method and Apparatus for Obtaining Electricity from Offshore Wind Turbines - According to one aspect of the teachings herein, various feeder connection arrangements and architectures are disclosed, for collecting electricity from wind turbines in an offshore collection grid that operates at a fixed low frequency, e.g., at one third of the targeted utility grid frequency. Embodiments herein detail various feeder arrangements, such as the use of parallel feeder connections and cluster-based feeder arrangements where a centralized substation includes a common step-up transformer for outputting electricity at a stepped-up voltage, for low-frequency transmission to onshore equipment. Further aspects relate to advantageous generation arrangements, e.g., tower-based arrangements, for converting wind power into electrical power using, for example, medium-speed or high-speed gearboxes driving generators having a rated electrical frequency for full-power output in a range from about 50 Hz to about 150 Hz, with subsequent conversion to the fixed low frequency for off-shore collection. | 09-17-2015 |
20150260163 | Method and Apparatus for Obtaining Electricity from Offshore Wind Turbines - According to one aspect of the teachings herein, a system for obtaining electricity from wind turbines provides advantageous operation with respect to offshore wind turbines where the size and weight of electricity generation and collection equipment are key considerations. The contemplated system includes an apparatus that is configured for collecting wind-generated electricity at a fixed low frequency and at a desired collection voltage, based on the advantageous configuration and use of a modular multilevel converter or MMC. | 09-17-2015 |
Patent application number | Description | Published |
20080233285 | Methods of forming SIC MOSFETs with high inversion layer mobility - Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O | 09-25-2008 |
20090004883 | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen - Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen. | 01-01-2009 |
20090261351 | Silicon Carbide Devices Having Smooth Channels - Power devices are provided including a p-type conductivity well region and a buried p | 10-22-2009 |
20100009545 | Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utilizing Atomic Oxygen - Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature of about 500° C. to about 1300° C., introducing atomic oxygen in the chamber, and flowing the atomic oxygen over a surface of the silicon carbide layer to thereby form an oxide layer on the silicon carbide layer. In some embodiments, introducing atomic includes oxygen providing a source oxide in the chamber and flowing a mixture of nitrogen and oxygen gas over the source oxide. The source oxide may comprise aluminum oxide or another oxide such as manganese oxide. Some methods include forming an oxide layer on a silicon carbide layer and annealing the oxide layer in an atmosphere including atomic oxygen. | 01-14-2010 |
20100221924 | METHODS OF FORMING SIC MOSFETS WITH HIGH INVERSION LAYER MOBILITY - Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O | 09-02-2010 |
20100320477 | PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MINORITY CARRIER LIFETIMES - A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration. | 12-23-2010 |
20120228638 | Methods of Fabricating Silicon Carbide Devices Having Smooth Channels and Related Devices - Methods of forming silicon carbide power devices are provided. An n | 09-13-2012 |
20130248883 | HIGH PERFORMANCE POWER MODULE - The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like. | 09-26-2013 |
20150028354 | Silicon Carbide Devices Having Smooth Channels - Methods of forming silicon carbide power devices are provided. An n | 01-29-2015 |