Patent application number | Description | Published |
20110204523 | METHOD OF FABRICATING DUAL DAMASCENE STRUCTURES USING A MULTILEVEL MULTIPLE EXPOSURE PATTERNING SCHEME - A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers. | 08-25-2011 |
20110291284 | INTERCONNECT STRUCTURE WITH AN OXYGEN-DOPED SiC ANTIREFLECTIVE COATING AND METHOD OF FABRICATION - An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material. Also, the oxygen-doped SiC ARC can withstand current BEOL processing conditions. | 12-01-2011 |
20110312164 | FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING A CUSTOM OXIDE LAYER - The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision. | 12-22-2011 |
20110312176 | FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING AN ORGANIC PROTECTIVE LAYER - Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound. | 12-22-2011 |
20130026639 | Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme - A method for fabricating a dual damascene structure includes providing a first photoresist layer coated on an underlying dielectric stack, exposing said first photoresist layer to a first predetermined pattern of light, coating a second photoresist layer onto the pre-exposed first photoresist layer, exposing said second photoresist layer to a second predetermined pattern of light, optionally post-exposure baking the multi-tiered photoresist layers and developing said photoresist layers to form a multi-tiered dual damascene structure in the photoresist layers. | 01-31-2013 |
20130157463 | NEAR-INFRARED ABSORBING FILM COMPOSITION FOR LITHOGRAPHIC APPLICATION - The present invention relates to a near-infrared (NIR) film composition for use in vertical alignment and correction in the patterning of integrated semiconductor wafers and a pattern forming method using the composition. The NIR absorbing film composition includes a NIR absorbing dye having a polymethine cation and a crosslinkable anion, a crosslinkable polymer and a crosslinking agent. The patterning forming method includes aligning and focusing a focal plane position of a photoresist layer by sensing near-infrared emissions reflected from a substrate containing the photoresist layer and a NIR absorbing layer formed from the NIR absorbing film composition under the photoresist layer. The NIR absorbing film composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate having complex buried topography. | 06-20-2013 |
20140210034 | NEAR-INFRARED ABSORBING FILM COMPOSITIONS - A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film. | 07-31-2014 |
20140367248 | EXTREME ULTRAVIOLET RADIATION (EUV) PELLICLE FORMATION APPARATUS - Spacers arranged on opposite sides of an article to be processed into an EUV pellicle support the article. Plates on opposite ends of the spacer-article combination include respective electrodes. The plates, article, and spacers can be held together with a vacuum retention system. A center hole of each spacer forms a chamber with surfaces engaged by the spacer. A fluid entry extending from an outer surface of each spacer to its center hole allows delivery of fluid to each chamber. Additional spacers can be used to support additional articles. Additional plates and electrodes can also be used. | 12-18-2014 |
20140370423 | EXTREME ULTRAVIOLET (EUV) RADIATION PELLICLE FORMATION METHOD - An extreme ultraviolet (EUV) photolithography pellicle with at least 70% transmissivity to EUV can be formed from a layer of semiconductor material applied to a substrate. The bottom surface of the layer can be exposed by forming support structure(s) from the substrate. Semiconductor material between the exposed surfaces can become the pellicle by anodizing until an objective is reached, such as a particular transmissivity, range of size of pores formed, pellicle region thickness, elapse of a period, and/or another objective indicative of 70% transmissivity to EUV for the semiconductor material between the exposed surfaces. | 12-18-2014 |