Danno
Atsushi Danno, Singapore SG
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20130004911 | METHOD AND APPARATUS FOR FORMING ORTHODONTIC BRACKETS - Proposed is a method and apparatus for forming an orthodontic bracket for use with an orthodontic archwire involving shaping a length of material to form at least two enlarged portions and a base member, the base member being intermediate two arm members and the respective enlarged portions having a thickness that is thicker than the thickness of the base member; bending the length of material at the respective enlarged portions; and coining the respective enlarged portions, such that portions of the arm members define a channel to receive a portion of the orthodontic archwire. | 01-03-2013 |
Hirofumi Danno, Yokohama JP
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20120150951 | COMPUTER SYSTEM, RECORDING MEDIUM AND MAINTENANCE SUPPORT SYSTEM - An aspect of the invention is a system for acquiring execution information of a process executed in a computer which receives an execution request of a process and a request to start acquiring execution information of the process from a client. An application execution part of a server part executes the process based on the execution request. An execution information acquirement control part of the server part stores execution information of the process executed by the application execution part in a storage device based on the request to start acquiring execution information. The stored execution information is displayed in response to a display request. | 06-14-2012 |
20130317879 | WORK PROBLEM ANALYSIS SUPPORT SYSTEM - There is provided a system which analyzes data representative of operation situation of a work system and finds tacit problem hidden in work performed at the a field by a system user. Particularly, the system is to support to find the problem even if the user is not a specialist such as ethnographer. The system includes event examples in which the problems in the work at the field found from user analysis such as observation or interview are classified and expressed as events in operation data when a computer is utilized, analysis menu, analysis function and visualization unit for finding the events. | 11-28-2013 |
Hirofumi Danno, Tokyo JP
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20140122445 | DATABASE ANALYZER AND DATABASE ANALYSIS METHOD - A database analyzer includes a data sorting unit sorting a data group acquired from an analysis target database based on data values in a table column and storing it as analysis target data in a storage unit; a data pattern creation processing unit creating a group for each data value based on differences between the data values and storing a data pattern in the storage unit; a data pattern judgment processing unit for judging validity of the data pattern; and a data pattern transformation processing unit for reconstructing the data pattern with respect to constituent elements of each group included in the data pattern by transforming each group in accordance with a specified conversion rule for converting the constituent elements, which are conceptually similar to each other, into the same constituent element, and storing it in the storage unit if a negative result is obtained for the validity judgment. | 05-01-2014 |
20150032708 | DATABASE ANALYSIS APPARATUS AND METHOD - A database analysis apparatus pays its attention to table columns more than two constituting a table among plural tables that a database holds, and analyzes automatically a dependence and a limitation condition that exist between the table columns from a tendency of appearance at the same time of data which each table column maintains, which comprises a data category calculation means to calculate a method of categorizing a data group from association rules generated from the data group of two or more table columns and an association rules reconstruction means to generate association rules of the best granularity by reconstructing the association rules based on the result of the above categorizing. | 01-29-2015 |
Hiroyuki Danno, Kyoto JP
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20090202901 | Battery - At a central portion of a lid of a battery, a negative terminal, which has a T-shaped section view, is provided so as to be surrounded by a gasket and pierce the lid. An insulator is provided at the inner face side of the lid. A plate-like current collector is placed in a recess of the insulator. Notches are provided at two positions of an insertion hole which is provided at one end portion side of the current collector. By inserting the negative terminal into the insertion hole and crimping an end portion of a leg portion of the negative terminal, the negative terminal is fixed to the current collector with a deforming part of the end portion eating into the notches and being locked. | 08-13-2009 |
Katsunori Danno, Aichi JP
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20150191849 | SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method for Same - Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal. | 07-09-2015 |
Katsunori Danno, Shizuoka JP
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20120118221 | METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL - The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth. | 05-17-2012 |
Katsunori Danno, Susono-Shi JP
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20130042802 | METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL - The present invention provides a method of production of SiC single crystal using the solution method which prevents the formation of defects due to causing a seed crystal to touch the melt for seed touch, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal which causes an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt in the state where the C is not yet saturated. | 02-21-2013 |
20130059429 | METHOD OF PRODUCTION OF SIC SEMICONDUCTOR DEVICE - A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate. | 03-07-2013 |
20130220212 | METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL - A method for manufacturing an n-type SiC single crystal, enables the suppression of the variation in nitrogen concentration among a plurality of n-type SiC single crystal ingots manufactured. A method includes the steps of: providing a manufacturing apparatus ( | 08-29-2013 |
20140127466 | SIC SINGLE CRYSTAL AND METHOD OF PRODUCING SAME - A SiC single crystal having high crystallinity and a large diameter is provided. | 05-08-2014 |
20150064882 | PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A process for producing a semiconductor device includes: forming an SiC epitaxial layer on an SiC substrate; implanting the epitaxial layer with ions; forming a gettering layer having a higher defect density than a defect density of the SiC substrate; and carrying out a heat treatment on the epitaxial layer. The semiconductor device includes an SiC substrate, an SiC epitaxial layer formed on the SiC substrate, and a gettering layer having a higher defect density than a defect density of the SiC substrate. | 03-05-2015 |
20150136016 | METHOD FOR PRODUCING SiC SINGLE CRYSTAL - Provided is a method for producing a SiC single crystal wherein generation of polycrystals can be inhibited even if the temperature of the Si—C solution is changed after seed touching. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient in which the temperature decreases from the interior toward the surface, to grow a SiC single crystal, comprising the steps of: (A) bringing the temperature of the solution to a first temperature, (B) contacting the substrate held on the holding shaft with the solution, (C) bringing the temperature of the solution to a second temperature after the contacting the substrate with the solution, and (D) moving the substrate held on the holding shaft in the vertical direction according to the change in liquid surface height of the solution when the temperature of the solution is brought from the first temperature to the second temperature. | 05-21-2015 |
Katsunori Danno, Toyota-Shi JP
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20150128847 | SiC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF - An objective of the present invention is to provide a high-quality SiC single crystal in which the threading dislocation density including screw dislocation, edge dislocation and micropipe defect is reduced, and a method for producing such SiC single crystal according to a solution technique. The method for producing the SiC single crystal according to a solution technique which involves bringing an SiC seed crystal into contact with an Si—C solution having a temperature gradient in which the temperature is lower towards the surface from the inner part and growing an SiC single crystal comprises setting the temperature gradient of the surface region of the Si—C solution to 10° C./cm or below, bringing the (1-100) face of an SiC seed crystal into contact with the Si—C solution, and growing an SiC single crystal on the (1-100) face of the seed crystal at a ratio (single crystal growth rate/temperature gradient) of the growth rate of the SiC single crystal to the temperature gradient which is less than 20×10 | 05-14-2015 |
Katsunori Danno US
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20150191849 | SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method for Same - Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal. | 07-09-2015 |
Kazuhisa Danno, Otsu-Shi JP
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20150145816 | SUBSTRATE WITH TRANSPARENT ELECTRODE, METHOD FOR MANUFACTURING SAME, AND TOUCH PANEL - A substrate is provided with a transparent electrode in which the pattern is hardly visible even when the transparent electrode layer has been patterned, and a method for manufacturing thereof is provided. On at least one of the surfaces of a transparent film, a first, second, and third dielectric material layer, and a patterned transparent electrode layer are included, in this order, each preferably having a film thickness and refractive index within a specific range. The first and third dielectric material layers are silicon oxide layers containing SiO | 05-28-2015 |
Kazumasa Danno, Tokyo JP
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20090260404 | Washing Machine - The present invention provides a washing machine configured such that a gas having a cleaning function is prevented from leaking to the outside. The washing machine performs an ozone cleaning step for cleaning dry laundry by supplying ozone to the laundry prior to a washing step. Before the start of the ozone cleaning step, a dehumidification water valve ( | 10-22-2009 |
Minoru Danno, Kanagawa-Ken JP
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20150108031 | BARRIER-FILM FORMING APPARATUS, BARRIER-FILM FORMING METHOD, AND BARRIER-FILM COATED CONTAINER - A barrier-film forming apparatus that forms a barrier film on an inner face of a container having a concave or convex portion as a processing target, including: a dielectric member having a cavity sized to enclose the container, an external electrode covering an outer circumference of the dielectric member, an exhaust unit installed on an end face of the external electrode on a side where a mouth of the container is located, with an insulating member interposed therebetween, and depressurizing inside of the container through an exhaust pipe, an internal electrode inserted from a side of the exhaust pipe and also serving as a gas blowout unit that blows out medium gas for generating a barrier film into the container, and an electric-field applying unit that applies an electric field for generating exhaust between the external electrode and a ground electrode. | 04-23-2015 |
Minoru Danno, Tokyo JP
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20120323502 | FLOW VOLUME MEASUREMENT DEVICE AND FLOW VELOCITY MEASUREMENT DEVICE - A flow volume measurement device or a flow velocity measurement device include a measurement cell including a main pipe, an incident tube that is connected to the main pipe, an emission tube that is connected to the main pipe, and a first purge-fluid supply tube that is connected to the incident tube, a purge-fluid supply unit that supplies purge fluid into the first purge-fluid supply tube of the measurement cell, a light emitting unit that emits a laser beam to the measurement cell, a light receiving unit that receives the laser beam emitted from the light emitting unit and having passed through the measurement cell, and outputs a received amount of light as a light reception signal, a calculation unit that calculates a flow volume or a flow velocity of exhaust fluid flowing in the measurement cell, based on a light reception signal output from the light receiving unit. | 12-20-2012 |
Minoru Danno, Kanagawa JP
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20100096393 | BARRIER-FILM FORMING APPARATUS, BARRIER-FILM FORMING METHOD, AND BARRIER-FILM COATED CONTAINER - A barrier-film forming apparatus that forms a barrier film on an inner face of a container ( | 04-22-2010 |
20110019193 | METHOD AND APPARATUS FOR MEASURING DENSITY - Disclosed are method and apparatus for measuring density, that can simultaneously measure gaseous substance density and solid particulate material density and further can simultaneously measure the densities of a plurality of materials such as black smoke, white smoke, and water vapor in the solid particulate material in a simple and reliable manner. The method for measuring density comprises applying a laser beam having an absorption wavelength inherent in a gaseous material contained in an object to be measured, to the object to detect a light transmittance and a light absorption amount and detecting the density of gaseous materials in the object and the density of solid particulate materials in the object. The relationship between the density of a plurality of kinds of solid particulate materials including black smoke and white smoke and a laser beam attenuation level in each absorption wavelength is preset. Laser beams having a plurality of respective absorption wavelengths are applied to the gaseous substance to be measured. The attenuation levels of the applied laser beams having the plurality of absorption wavelengths are measured. The measured attenuation levels are compared with the attenuation levels calculated based on the present relationship to calculate the densities of the plurality of kinds of solid particulate materials. | 01-27-2011 |
20110239629 | FLUE GAS PURIFYING DEVICE - An object of the present invention is to provide a flue gas purifying device that can suppress leakage of ammonia and can efficiently decrease nitrogen oxides in flue gas. The object is achieved by a flue gas purifying device including: an exhaust pipe; a urea-water injecting unit that injects urea water into the exhaust pipe; a catalytic unit that includes a urea SCR catalyst that promotes a reaction between ammonia and nitrogen oxides and a support mechanism that supports the urea SCR catalyst in the exhaust pipe, and is arranged on a downstream side to a position where urea water is injected; a concentration measuring unit arranged on a downstream side to the catalytic unit in a flow direction of flue gas to measure an ammonia concentration in flue gas having passed through the urea SCR catalyst; and a control unit that controls injection of urea water by the urea-water injecting unit based on an ammonia concentration measured by the concentration measuring unit. | 10-06-2011 |
20110293483 | FLUE GAS PURIFYING DEVICE - An object of the present invention is to provide a flue gas purifying device that can efficiently decrease nitrogen oxides in flue gas. This object is solved by including: an exhaust pipe that guides flue gas discharged from a burning appliance; a urea-water injecting unit that injects urea water into the exhaust pipe; a catalytic unit arranged on a downstream side to a position where urea water is injected in a flow direction of flue gas and having a urea SCR catalyst; a first ammonia-concentration measuring unit that measures a concentration of ammonia in flue gas at a measurement position in a region where the catalytic unit is arranged; a second ammonia-concentration measuring unit arranged on a downstream side to the catalytic unit in a flow direction of the flue gas, to measure a concentration of ammonia in the flue gas having passed through the urea SCR catalyst; and a control unit that controls injection of urea water by the urea-water injecting unit based on measurement results acquired by the first and second ammonia-concentration measuring units. | 12-01-2011 |
20120000771 | INNER ELECTRODE FOR BARRIER FILM FORMATION AND APPARATUS FOR FILM FORMATION - An inner electrode for barrier film formation is an inner electrode for barrier film formation that is inserted inside a plastic container having an opening, supplies a medium gas to the inside of the plastic container, and supplies high frequency power to an outer electrode arranged outside the plastic container, thereby generating discharge plasma on the inner surface of the plastic container to form a barrier film on the inner surface of the plastic container, and that is provided with a gas supply pipe having a gas flow path to supply a medium gas and an insulating member screwed into an end portion of the gas supply pipe to be flush therewith and having a gas outlet communicated with the gas flow path. | 01-05-2012 |
Minoru Danno, Yokohama-Shi JP
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20090095918 | Sensor Unit in Exhaust Gas Analyzer - An exhaust gas analyzer of the present invention includes a sensor unit | 04-16-2009 |
Shohei Danno, Minato-Ku JP
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20130243587 | TURBINE VANE OF STEAM TURBINE AND STEAM TURBINE - The invention includes vane members that have a space formed therein and a plate spring member that is disposed inside the space of the vane members and elastically contacts inner surfaces of the vane members. The plate spring member includes a positioning portion, an elastic contact portion, and a connection portion. The elastic contact portion is divided into plural numbers in the length direction of the vane members. As a result, in the invention, the elastic contact portion elastically contacts the inner surfaces of the vane members without any partial contact throughout the entire surface thereof. Accordingly, the elastic contact area between the elastic contact portion and the inner surfaces of the vane members is widened, so that self-excited vibration generated in a turbine vane may be reliably suppressed. | 09-19-2013 |
Shohei Danno, Tokyo JP
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20110217175 | TURBINE ROTOR BLADE - It is possible to easily and rapidly slot a blade root of a final (last) turbine rotor blade into a blade groove on a turbine disc even when the plan-view shape of a shroud of the turbine rotor blade is complex. A turbine rotor blade that is provided with a blade root that is slotted into a blade groove formed on a circumferential portion of the turbine disc to hold the whole blade, a blade portion that is exposed to high-temperature gas, a platform that supports this blade portion, a shank that connects the blade root and the platform, and a shroud that extends along the circumferential direction from the end of the blade portion has a cut-out portion cut out to a predetermined depth, either at the leading-edge or the trailing-edge of the blade root, along the lengthwise direction thereof from the end of the blade root to an intermediate part of the shank. | 09-08-2011 |
Tomonobu Danno, Osaka JP
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20110027212 | FUNCTIONAL MATERIAL AND DELIVERY GEL COMPOSITION AND METHOD FOR MANUFACTURING - The present invention relates to a high concentration functional material gel composition and effective delivery composition thereof. More specifically, the present invention relates to a high concentration functional material gel composition comprising a small organic molecule having at least one of a carbonyl group and at least one of an isolated hydroxyl group from the carbonyl group as a defined mandatory element holding and delivering amounts of functional materials. This is achieved without depending on employing additional incompatible materials in the functional composition, including for example inorganic salts, polymers, absorbents petroleum waxes, and paraffin hydrocarbons. | 02-03-2011 |