Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Daniël
Daniël De Zutter, Eeklo BE
| Patent application number | Description | Published |
|---|---|---|
| 20100280801 | METHOD AND DEVICE FOR GENERATING A MODEL OF A MULTIPARAMETER SYSTEM - The present invention relates to a method ( | 11-04-2010 |
Daniël De Zutter, Eeklo BE
| Patent application number | Description | Published |
|---|---|---|
| 20100280801 | METHOD AND DEVICE FOR GENERATING A MODEL OF A MULTIPARAMETER SYSTEM - The present invention relates to a method ( | 11-04-2010 |
Daniël Nelis, Peer BE
| Patent application number | Description | Published |
|---|---|---|
| 20110045745 | Doped Ceria Abrasives with Controlled Morphology and Preparation Thereof - The present invention relates to doped ceria (CeO2) abrasive particles, having an essentially octahedral morphology. Such abrasives are used in water-based slurries for Chemical Mechanical Polishing (CMP) of subrates such as silicon wafers. The invention more particularly concerns yttrium-doped ceria particles having a specific surface area of 10 to 120 m2/g, characterized in that at least 95 wt %, preferably at least 99 wt %, of the particles are mono-crystalline and in that the particles' surfaces consist of more than 70%, preferably of more than 80%, of planes parallel to {111} planes. A novel gas phase process for synthesizing this product is also disclosed, comprising the steps of providing a hot gas stream, —and, introducing into said gas stream a cerium-bearing reactant, a dopant-bearing reactant, and an oxygen-bearing reactant, —the temperature of said gas stream being chosen so as to atomize said reactant, the reactant being selected so as to form, upon cooling, doped ceria particles. Abrasive slurries based on the above ceria offer a low level of induced detectivity in the polished substrate, while ensuring a good removal rate. | 02-24-2011 |
Daniël Nelis, Peer BE
| Patent application number | Description | Published |
|---|---|---|
| 20110045745 | Doped Ceria Abrasives with Controlled Morphology and Preparation Thereof - The present invention relates to doped ceria (CeO2) abrasive particles, having an essentially octahedral morphology. Such abrasives are used in water-based slurries for Chemical Mechanical Polishing (CMP) of subrates such as silicon wafers. The invention more particularly concerns yttrium-doped ceria particles having a specific surface area of 10 to 120 m2/g, characterized in that at least 95 wt %, preferably at least 99 wt %, of the particles are mono-crystalline and in that the particles' surfaces consist of more than 70%, preferably of more than 80%, of planes parallel to {111} planes. A novel gas phase process for synthesizing this product is also disclosed, comprising the steps of providing a hot gas stream, —and, introducing into said gas stream a cerium-bearing reactant, a dopant-bearing reactant, and an oxygen-bearing reactant, —the temperature of said gas stream being chosen so as to atomize said reactant, the reactant being selected so as to form, upon cooling, doped ceria particles. Abrasive slurries based on the above ceria offer a low level of induced detectivity in the polished substrate, while ensuring a good removal rate. | 02-24-2011 |
Daniël Van'T Veen, Borne NL
Daniël Van'T Veen, Borne NL
Danil Dvinov, San Francisco, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110231835 | SYSTEM, METHOD AND COMPUTER PROGRAM PRODUCT FOR CONDITIONALLY ENABLING AN INSTALLATION ASPECT - In accordance with embodiments, there are provided mechanisms and methods for conditionally enabling an installation aspect. These mechanisms and methods for conditionally enabling an installation aspect can enable an improved determination of boundaries associated with the code, improved communication between code developers and users, improved security and access restriction, etc. | 09-22-2011 |
Danil Prokhorov, Canton, MI US
| Patent application number | Description | Published |
|---|---|---|
| 20100241309 | ELECTRONIC CONTROL SYSTEM, ELECTRONIC CONTROL UNIT AND ASSOCIATED METHODOLOGY OF ADAPTING A VEHICLE SYSTEM BASED ON VISUALLY DETECTED VEHICLE OCCUPANT INFORMATION - An electronic control system, electronic control unit and an associated methodology for adapting a vehicle system are provided. A visual sensor detects a three dimensional profile of an occupant of a vehicle. An electronic control unit determines at least one of three dimensional locations and orientations of a plurality of body parts of the occupant of the vehicle, a body-volume of the occupant of the vehicle and body dynamics of the occupant of the vehicle based on the three dimensional profile detected by the visual sensor. The electronic control unit adapts a vehicle system based on at least one of the determined three dimensional locations and orientations, the determined body-volume and the determined body dynamics. | 09-23-2010 |
Danil Tirtowidjolo, Lake Jackson, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20110152580 | PROCESS AND APPARATUS FOR VAPOR PHASE PURIFICATION DURING HYDROCHLORINATION OF MULTI-HYDROXYLATED ALIPHATIC HYDROCARBON COMPOUNDS - A process for converting multihydroxylated-aliphatic hydrocarbon compound(s) and/or ester(s) thereof to chlorohydrins and/or esters thereof is disclosed in which one or more of multihydroxylated-aliphatic hydrocarbon compound(s) and/or ester(s) thereof and/or monochlorohydrin(s) and/or ester(s) thereof with at least one chlorinating feed stream comprising at least one chlorinating agent and at least one impurity having a boiling point below the boiling point of the chlorohydrin product having the lowest boiling under hydrochlorination conditions, optionally in the presence of water, one or more catalyst(s), and/or one or more heavy byproduct(s) in a reaction vessel under hydrochlorination conditions, wherein the liquid-phase reaction mixture is maintained at a temperature below the boiling point of the chlorohydrin product having the lowest boiling point under hydrochlorination conditions and greater than the boiling point(s) of the at least one impurity and a vapor phase vent stream comprising the at least one impurity is removed from the liquid phase reaction mixture. An apparatus suitable for carrying out the disclosed process is illustrated in FIG. | 06-23-2011 |
