| Patent application number | Description | Published |
|---|
| 20100133093 | Method for alkali doping of thin film photovoltaic materials - A method of manufacturing a solar cell includes providing a substrate, depositing a first electrode comprising an alkali-containing transition metal layer over the substrate, depositing at least one p-type semiconductor absorber layer over the first electrode, wherein the p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, depositing an n-type semiconductor layer over the p-type semiconductor absorber layer, and depositing a second electrode over the n-type semiconductor layer. The step of depositing the alkali-containing transition metal layer includes sputtering from a first target comprising the transition metal and a second target comprising the alkali metal, where a composition of the first target is different from a composition of the second target. | 06-03-2010 |
| 20100258173 | POLISHING A THIN METALLIC SUBSTRATE FOR A SOLAR CELL - A method for fabricating a solar cell. The method includes providing a thin metallic substrate in roll form. The method also includes applying an abrasive grit to a surface of the thin metallic substrate. The method includes mechanical-polishing the surface with the abrasive grit such that the surface is polished to remove at least one defect from the surface. Mechanical-polishing the surface of the thin metallic substrate is by a roll-to-roll polishing process of the surface of the thin metallic substrate. Moreover, the method includes depositing an absorber layer of the solar cell on the thin metallic substrate. | 10-14-2010 |
| 20100307915 | Barrier for doped molybdenum targets - A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material. | 12-09-2010 |
| 20100310783 | Barrier for doped molybdenum targets - A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material. | 12-09-2010 |
| 20110024285 | Method for alkali doping of thin film photovoltaic materials - An alkali-containing transition metal sputtering target, the method of making the same, and the method of manufacturing a solar cell using the same. | 02-03-2011 |
| 20110089030 | CIG sputtering target and methods of making and using thereof - A sputtering target includes a copper indium gallium sputtering target material on a backing structure. The sputtering target material has a density of at least 100% or more as defined by the rule of mixtures applied to densities of component elements of the sputtering target material. The sputtering target material has an overall uniform composition. | 04-21-2011 |
| 20110162696 | Photovoltaic materials with controllable zinc and sodium content and method of making thereof - A solar cell includes a substrate, a first electrode located over the substrate, a sodium doped p-type copper indium selenide (CIS) based alloy semiconductor absorber layer located over the first electrode, a zinc and sodium doped n-type copper indium selenide (CIS) based alloy semiconductor layer located on the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. | 07-07-2011 |
| 20110171395 | METHOD OF FORMING A SPUTTERING TARGET - A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material. | 07-14-2011 |
