| Patent application number | Description | Published |
|---|
| 20090033631 | Rewritable Electronic Drawing Surface Using Bistable Media - An apparatus having an electronic drawing surface includes a common electrode overlying a least part of the outer surface of a housing, or other object, and a bistable media layer overlying the common electrode. The bistable media layer has at least two stable states and is operable to assume a first stable state in the region of a drawing tool when an electrical voltage difference is generated between the drawing tool and the common electrode. The voltage difference produces an electrical field across a region of the bistable media layer when the drawing tool is in close proximity to the bistable layer. Optionally, an outer surface of a plurality of transparent electrodes overlies the bistable media layer. | 02-05-2009 |
| 20090034215 | Method and Apparatus for Providing Electrically Isolated Closely Spaced Features on a Printed Circuit Board - A method and apparatus for forming controlled stress fractures in metal produces electrically isolated, closely spaced circuit sub-entities for use on a metallized printed wiring board. A polymeric substrate has a layer of metal adhered to the surface, and the metal layer is formed into entities. Each entity has a fracture initiating feature formed into it, which serves to initiate and/or direct a stress crack that is induced in the metal. The entities are fractured in a controlled manner by subjecting the substrate and the entities to mechanical stress by a rapid thermal excursion, creating a stress fracture in the entity extending from the fracture initiating feature. The stress fracture divides each entity into two or more sub-entities that are electrically isolated from each other by the stress fracture. The resulting structure can be used to form circuitry requiring very fine spaces for high density printed circuit boards. The rapid thermal stress may be induced by a high intensity, strobed xenon arc lamp. | 02-05-2009 |
| 20090057662 | Nanoparticle Semiconductor Device and Method for Fabricating - A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles. The semiconductive device is formed on a polymeric substrate by printing a composition that contains nanoparticles of inorganic semiconductor suspended in a carrier, using a graphic arts printing method. The printed deposit is then heated to remove substantially all of the carrier from the printed deposit. The low-temperature process does not heat the substrate or the printed deposit above 300° C. The mobility of the resulting semiconductive device is between about 10 cm | 03-05-2009 |
| 20090080233 | METHOD AND APPARATUS FOR PRINTED RESISTIVE READ ONLY MEMORY - A printed read only memory (ROM) device that consists of an array of memory resistors, a reference resistor, and analog-to-digital circuit is disclosed. Resistance values are dependent on the data to be stored in the read only memory. During read operation, a resistor in the array is powered, activating a voltage divider between the powered resistor and the reference resistor. The analog-to-digital circuit will read the divided voltage level between the two resistors, compare the voltage supply level and interpret it into bits of memory data. During the manufacturing of the ROM circuit, an array of memory resistors is printed as the means for storage of the data. Resistive inks of specific resistance values are selected and printed in a preferred layout that includes a reference resistor coupled to the determined array of memory resistors and an analog to digital converter so as to form a read only memory with the received data. | 03-26-2009 |
| 20090098668 | Method and Apparatus to Facilitate Testing of Printed Semiconductor Devices - A printing platform receives ( | 04-16-2009 |
| 20090159565 | Method to Pattern Metallized Substrates Using a High Intensity Light Source - A method for delineating a metallization pattern in a layer of sputtered aluminum or sputtered copper using a broad spectrum high intensity light source. The metal is deposited on a polymeric substrate by sputtering, so that it has a porous nanostructure. An opaque mask that is a positive representation of the desired metallization pattern is then situated over the metallization layer, exposing those portions of the metallization layer intended to be removed. The masked metallization layer is then exposed to a rapid burst of high intensity visible light from an arc source sufficient to cause complete removal of the exposed portions of the metallization layer, exposing the underlying substrate and creating the delineated pattern. | 06-25-2009 |
| 20090161727 | Method and Apparatus for a Temperature Sensor for Measuring Peak Temperatures - A method and apparatus for an irreversible temperature sensor for measuring a peak exposure temperature. The apparatus is fabricated by printing an admixture of conductive nanoparticles on a dielectric substrate to form a film. The film has an electrical resistance that is inversely proportional to the exposure temperature. The electrical resistance also irreversibly decreases as the exposure temperature of the film increases. A portion of the film is exposed to a pulse of electromagnetic energy sufficient to render it substantially more electrically conductive than the portion that was not exposed. In use, the peak exposure temperature is determined by measuring the electrical resistance of the non-altered portion of the film and the electrical resistance of the portion that was exposed to the pulse of electromagnetic energy, and subtracting the electrical resistance of the altered portion from the electrical resistance of the portion that was not altered, to provide a difference value. The peak exposure temperature is then be calculated as a function of the difference value. | 06-25-2009 |
| 20100032654 | Semiconductor Device Having Silane Treated Interface - A semiconductor device made on a polymer substrate using graphic arts printing technology uses a printable organic semiconductor. An electrode is situated on the substrate, and a dielectric layer is situated over the electrode. Another electrode(s) is situated on the dielectric layer. The exposed surfaces of the dielectric and the top electrode are treated with a reactive silane to alter the surface of the electrode and the dielectric sufficiently to allow an overlying organic semiconductor layer to have good adhesion to both the electrode and the dielectric. In various embodiments, the electrodes may be printed, and the dielectric layer may also be printed. | 02-11-2010 |
