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Daniel P. Spence
Daniel P. Spence, Carlsbad, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090130338 | Group 2 Metal Precursors for Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 05-21-2009 |
| 20090136685 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
| 20100119726 | Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films - This invention is related to Group 2 metal-containing polydentate β-ketoiminate precursors and compositions comprising Group 2 metal-containing polydentate β-ketoiminate precursors, wherein the polydentate β-ketoiminate precursors incorporate an alkoxy group in the imino portion of the molecule. The compounds and compositions are useful for fabricating metal containing films on substrates such as silicon, metal nitride, metal oxide and other metal layers via chemical vapor deposition (CVD) processes. | 05-13-2010 |
| 20100143607 | Precursors for Depositing Group 4 Metal-Containing Films - Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: | 06-10-2010 |
| 20110040124 | Method for Preparing Metal Complexes of Polydentate Beta-Ketoiminates - A method for making a group 2 metal-containing polydentate β-ketoiminate represented by the following structure A: | 02-17-2011 |
| 20110135838 | Liquid Precursor for Depositing Group 4 Metal Containing Films - The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR | 06-09-2011 |
Daniel P. Spence, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080254218 | Metal Precursor Solutions For Chemical Vapor Deposition - Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors. | 10-16-2008 |
| 20080286464 | Group 2 Metal Precursors For Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as potential precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 11-20-2008 |
| 20090136677 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
| 20100038785 | Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers - We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium. | 02-18-2010 |
| 20100075067 | Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD - A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established. | 03-25-2010 |