| Patent application number | Description | Published |
|---|
| 20090175777 | SINGLE CRYSTAL DIAMOND PREPARED BY CVD - A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond. | 07-09-2009 |
| 20100015438 | HIGH COLOUR DIAMOND LAYER - A method of producing CVD diamond having a high colour, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond. | 01-21-2010 |
| 20100326135 | DIAMOND MATERIAL - A method of making fancy orange synthetic CVD diamond material is described. The method comprises irradiating a single crystal diamond material that has been grown by CVD to introduce isolated vacancies into at least part of the CVD diamond material and then annealing the irradiated diamond material to form vacancy chains from at least some of the introduced isolated vacancies. Fancy orange CVD diamond material is also described. | 12-30-2010 |
| 20100329961 | DIAMOND MATERIAL - Starting from a diamond material which shows a difference in its absorption characteristics after exposure to radiation with an energy of at least 5.5 eV (typically UV radiation) and thermal treatment at 798K, controlled irradiation is applied so as to introduce defects in the diamond material. After the controlled irradiation the difference in the absorption characteristics after exposure to radiation with an energy of at least 5.5 eV and thermal treatment at 798K is reduced. | 12-30-2010 |
| 20100329962 | DIAMOND MATERIAL - A method of introducing NV centres in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centres from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies. | 12-30-2010 |
| 20100329965 | DIAMOND MATERIAL - A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post-irradiation treatment having) a total vacancy concentration [V | 12-30-2010 |
| 20110150745 | SINGLE CRYSTAL DIAMOND MATERIAL - A method of producing a grown single crystal diamond substrate comprising:
| 06-23-2011 |
| 20110163291 | SOLID STATE MATERIAL - A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T | 07-07-2011 |
