| Patent application number | Description | Published |
|---|
| 20090309110 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE FOR MULTI-COLORED DEVICES - A multicolored LED device made of a semipolar material having different indium containing regions provided on different spatial features of GaN material. Other materials such as non-polar materials can also be used. | 12-17-2009 |
| 20090309127 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE - A gallium containing crystalline material. The material comprises a bulk semi-polar gallium indium containing crystalline material having a thickness of about 20 nanometers to about 1000 nanometers. The material includes a spatial width dimension of no greater than about 10 microns characterizing the thickness of the bulk semi-polar gallium indium containing crystalline material. The material includes a photoluminescent characteristic of the crystalline material having a first wavelength, which is at least five nanometers greater than a second wavelength, which is derived from an indium gallium containing crystalline material grown on a growth region of greater than about 15 microns. | 12-17-2009 |
| 20100001300 | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs - A packaged light emitting device. The device has a substrate member comprising a surface region. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region according to a specific embodiment. At least a first of the light emitting diode device is fabricated on a semipolar GaN containing substrate and at least a second of the light emitting diode devices is fabricated on a nonpolar GaN containing substrate. In a preferred embodiment, the two or more light emitting diode devices emits substantially polarized emission. Of course, there can be other variations, modifications, and alternatives. | 01-07-2010 |
| 20100006873 | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN - A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission. | 01-14-2010 |
| 20100295088 | TEXTURED-SURFACE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE - A high efficiency textured-surface light emitting diode comprises a flip-chipped stack of Al | 11-25-2010 |
| 20100316075 | Optical Device Structure Using GaN Substrates for Laser Applications - An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region. | 12-16-2010 |
