| Patent application number | Description | Published |
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| 20090298202 | Techniques for Coupling in Semiconductor Devices - Techniques for exchange coupling of magnetic layers in semiconductor devices are provided. In one aspect, a semiconductor device is provided. The device comprises at least two magnetic layers, and a spacer layer formed between the magnetic layers, the spacer layer being configured to provide ferromagnetic exchange coupling between the layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field. The semiconductor device may comprise magnetic random access memory (MRAM). In another aspect, a method for coupling magnetic layers in a semiconductor device comprising at least two magnetic layers and a spacer layer therebetween, the method comprises the following step. Ferromagnetic exchange coupling is provided of the magnetic layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field. | 12-03-2009 |
| 20100258849 | MAGNETIC TUNNEL JUNCTION TRANSISTOR - A magnetic tunnel junction transistor. In a particular embodiment, the magnetic tunnel junction transistor includes a tunnel barrier having a high resistance when in a non-ferromagnetic state, and a low resistance when in a ferromagnetic state. The tunnel barrier is switchable between the non-ferromagnetic and the ferromagnetic states. | 10-14-2010 |
| 20100264475 | MAGNETIC TUNNEL JUNCTION TRANSISTOR - A magnetic tunnel junction transistor and method of operating the same. In a particular embodiment, the magnetic tunnel junction transistor includes electrically conductive source, drain and gate electrodes. An electrically insulating material having a non-magnetoelectric region and a magnetoelectric region is positioned such that the non-magnetoelectric region is, at least partially, between the source electrode and the drain electrode. The magnetoelectric region of the insulating material, when energized, is configured to change magnetic state of the insulating material. The gate electrode is positioned proximate the magnetoelectric region of the insulating material. | 10-21-2010 |
| Patent application number | Description | Published |
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| 20080212365 | Scalable Magnetic Random Access Memory Device - A magnetic memory cell is provided. The magnetic memory cell includes at least one fixed magnetic layer and a plurality of free magnetic layers, separated from the at least one fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one spacer layer, and a third free magnetic layer separated from the second free magnetic layer by at least one anti-parallel coupling layer. A magnetic moment of the first free magnetic layer is greater than both a magnetic moment of the second free magnetic layer and a magnetic moment of the third free magnetic layer. The magnetic memory cell may be used in conjunction with a magnetic random access memory device. | 09-04-2008 |
| 20080259674 | Scalable Magnetic Memory Devices - A magnetic memory cell is provided. The magnetic memory cell includes at least one fixed magnetic layer, and a plurality of free magnetic layers, separated from the at least one fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one first parallel coupling layer, and a third free magnetic layer separated from the second free magnetic layer by at least one second parallel coupling layer. A magnetic moment of the second free magnetic layer is greater than both a magnetic moment of the first free magnetic layer and a magnetic moment of the third free magnetic layer. The magnetic memory cell may be used in conjunction with a magnetic random access memory device. | 10-23-2008 |
| 20080259675 | Data Writing to Scalable Magnetic Memory Devices - A method is provided for writing data to an MRAM device having a plurality of magnetic memory cells configured in an array between a plurality of word lines and bit lines. At least one of the magnetic memory cells includes at least one fixed magnetic layer and a plurality of free magnetic layers, separated from the fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one first parallel coupling layer, and a third free magnetic layer separated from the second free magnetic layer by at least one second parallel coupling layer. A magnetic moment of the second free magnetic layer is greater than both a magnetic moment of the first free magnetic layer and the third free magnetic layer. | 10-23-2008 |
| 20090235018 | Increased Magnetic Damping for Toggle MRAM - Magnetic random access memory (MRAM) devices and techniques for use thereof are provided. In one aspect, a magnetic memory cell is provided. The magnetic memory cell comprises at least one fixed magnetic layer; at least one first free magnetic layer separated from the fixed magnetic layer by at least one barrier layer; at least one second free magnetic layer separated from the first free magnetic layer by at least one spacer layer; and at least one capping layer over a side of the second free magnetic layer opposite the spacer layer. One or more of the first free magnetic layer and the second free magnetic layer comprise at least one rare earth element, such that the at least one rare earth element makes up between about one percent and about 10 percent of one or more of the first free magnetic layer and the second free magnetic layer. | 09-17-2009 |
| 20090279353 | MAGNETIC TUNNEL JUNCTION TRANSISTOR - A magnetic tunnel junction transistor and method of operating the same. In a particular embodiment, the magnetic tunnel junction transistor includes electrically conductive source, drain and gate electrodes. An electrically insulating material having a non-magnetoelectric region and a magnetoelectric region is positioned such that the non-magnetoelectric region is, at least partially, between the source electrode and the drain electrode. The magnetoelectric region of the insulating material, when energized, is configured to change magnetic state of the insulating material. The gate electrode is positioned proximate the magnetoelectric region of the insulating material. | 11-12-2009 |
