| Patent application number | Description | Published |
|---|
| 20080314288 | Mixture For Doping Semiconductors - A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also provided are a method for producing such a doping mixture and the use thereof. | 12-25-2008 |
| 20100136768 | METHOD FOR SIMULTANEOUS DOPING AND OXIDIZING SEMICONDUCTOR SUBSTRATES AND THE USE THEREOF - The invention relates to a method for simultaneous doping and oxidizing semiconductor substrates and also to doped and oxidized semiconductors substrates produced in this manner. Furthermore, the invention relates to the use of this method for producing solar cells. | 06-03-2010 |
| 20100213166 | Process and Device for The Precision-Processing Of Substrates by Means of a Laser Coupled Into a Liquid Stream, And Use of Same - The invention relates to a method for precision processing of substrates in which a liquid jet which is directed towards a substrate surface and contains a processing reagent is guided over the regions of the substrate to be processed, a laser beam being coupled into the liquid jet. Likewise, a device which is suitable for implementation of the method is described. The method is used for different process steps in the production of solar cells. | 08-26-2010 |
| 20110092074 | Texturing and cleaning agent for the surface treatment of wafers and use thereof - A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density. | 04-21-2011 |
| 20110139241 | SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL - A solar cell and to a method for producing a solar cell is provided. The solar cell includes a semi-conductor substrate with doped regions ( | 06-16-2011 |
| 20110155239 | SOLAR CELL AND METHOD FOR THE PRODUCTION THEREOF - A solar cell having a semiconductor substrate with a front face and a rear face extending substantially parallel thereto, a front face metallization, a rear face metallization and at least three doped regions having at least two different conductivity types, including: a first doped region with a first conductivity type located on the front face of the semiconductor substrate and extends substantially over the entire front face; a second doped region with the opposite conductivity type to that of the first conductivity type located on the rear face and extends partially over said face; and a third doped region with the first conductivity type located on the rear face and extends partially over said face. The front face metallization is connected to the first doped region and the rear face metallization is connected to the second doped region in an electrically conductive manner and the solar cell has an electrically conductive connection which connects the third doped region to the front face metallization and/or the first doped region. | 06-30-2011 |
| 20110174355 | SOLAR CELL AND SOLAR CELL MODULE WITH ONE-SIDED CONNECTIONS - A solar cell, in particular for connecting to a solar cell module, including at least one metallic base contact, at least one metallic emitter contact ( | 07-21-2011 |
| 20110177651 | METHOD FOR PRODUCING A METAL STRUCTURE ON A SURFACE OF A SEMICONDUCTOR SUBSTRATE - A method for producing a metal structure on a surface of a semiconductor substrate, including the following steps: A applying a metal layer, B applying a structuring layer and C removing the structuring layer. Either step B is carried out after step A, and step C after step B in a masking method, so that the structuring layer covers the metal layer at least partially and, after step B is carried out, the metal layer is removed from the regions not covered by the structuring layer, before step C is carried out or, in a lift-off method, step A is carried out after step B, and step C after step A, so that the structuring layer is covered essentially by the metal layer and, at least in the regions, in which the metal layer covers the structuring layer, the metal layer is detached when step C is carried out. It is essential that the structuring layer in step B is produced by a hot melt ink. | 07-21-2011 |
