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Dan B. Millward, Boise US

Dan B. Millward, Boise, ID US

Patent application numberDescriptionPublished
20080217292Registered structure formation via the application of directed thermal energy to diblock copolymer films - Methods for fabricating sublithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multilayer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.09-11-2008
20080257187Methods of forming a stamp, methods of patterning a substrate, and a stamp and a patterning system for same - A method of patterning a substrate is disclosed. An ink material is chemisorbed to at least one region of a stamp and the chemisorbed ink material is transferred to a receptor substrate. The ink material has greater chemical affinity for the receptor substrate than for the at least one region of the stamp. A method of forming the stamp is also disclosed, as are the stamp and a patterning system.10-23-2008
20080274413Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers - Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.11-06-2008
20080286659Extensions of Self-Assembled Structures to Increased Dimensions via a "Bootstrap" Self-Templating Method - Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.11-20-2008
20080311347Alternating Self-Assembling Morphologies of Diblock Copolymers Controlled by Variations in Surfaces - Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.12-18-2008
20080315270MULTILAYER ANTIREFLECTION COATINGS, STRUCTURES AND DEVICES INCLUDING THE SAME AND METHODS OF MAKING THE SAME - Multi-layer antireflection coatings, devices including multi-layer antireflection coatings and methods of forming the same are disclosed. A block copolymer is applied to a substrate and self-assembled into parallel lamellae above a substrate. The block copolymer may optionally be allowed to self-assemble into a multitude of domains oriented either substantially parallel or substantially perpendicular to an widerlying substrate12-25-2008
20080318005Crosslinkable Graft Polymer Non-Preferentially Wetted by Polystyrene and Polyethylene Oxide - Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.12-25-2008
20090062470Zwitterionic block copolymers and methods - Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation.03-05-2009
20090200646One-Dimensional Arrays of Block Copolymer Cylinders and Applications Thereof - Methods for fabricating sublithographic, nanoscale microstructures in one-dimensional arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.08-13-2009
20090236309Thermal Anneal of Block Copolymer Films with Top Interface Constrained to Wet Both Blocks with Equal Preference - Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.09-24-2009
20090263628Multi-Layer Method for Formation of Registered Arrays of Cylindrical Pores in Polymer Films - Methods for fabricating sublithographic, nanoscale polymeric microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.10-22-2009
20090274887Graphoepitaxial Self-Assembly of Arrays of Downward Facing Half-Cylinders - Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.11-05-2009
20100102415METHODS FOR SELECTIVE PERMEATION OF SELF-ASSEMBLED BLOCK COPOLYMERS WITH METAL OXIDES, METHODS FOR FORMING METAL OXIDE STRUCTURES, AND SEMICONDUCTOR STRUCTURES INCLUDING SAME - Methods of forming metal oxide structure and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly are disclosed. The metal oxide structures and patterns may be used, for example, as a mask for sublithographic patterning during various stages of semiconductor device fabrication. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the soluble block laterally aligned with the trench and positioned within a matrix of the insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor which impregnates the soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface.04-29-2010
20100163180Sub-10 NM Line Features Via Rapid Graphoepitaxial Self-Assembly of Amphiphilic Monolayers - Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.07-01-2010
20100204402Zwitterionic Block Copolymers And Methods - Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation.08-12-2010
20100279062Alternating Self-Assembling Morphologies of Diblock Copolymers Controlled by Variations in Surfaces - Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.11-04-2010
20100316849Method to Produce Nanometer-Sized Features with Directed Assembly of Block Copolymers - Methods for fabricating stamps and systems for patterning a substrate, and devices resulting from those methods are provided.12-16-2010
20110144275Zwitterionic Block Copolymers and Methods - Zwitterionic block copolymers having oppositely charged or chargeable terminal groups, and methods of making and using the same, are disclosed. The zwitterionic block copolymers can undergo microphase separation.06-16-2011

Patent applications by Dan B. Millward, Boise, ID US