Inventors list |
Assignees list |
Classification tree browser |
Top 100 Inventors |
Top 100 Assignees |
Damon-Lacoste
Jerome Damon-Lacoste, Antony FR
| Patent application number | Description | Published |
|---|---|---|
| 20110120541 | SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND AN INTERDIGITATED STRUCTURE - A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually. | 05-26-2011 |
Jeröme Damon-Lacoste, Bourg La Reine FR
| Patent application number | Description | Published |
|---|---|---|
| 20090308453 | HETEROJUNCTION WITH INTRINSICALLY AMORPHOUS INTERFACE - The invention relates to a structure ( | 12-17-2009 |
Jeröme Damon-Lacoste, Bourg La Reine FR
| Patent application number | Description | Published |
|---|---|---|
| 20090308453 | HETEROJUNCTION WITH INTRINSICALLY AMORPHOUS INTERFACE - The invention relates to a structure ( | 12-17-2009 |
Jérôme Damon-Lacoste, Antony FR
| Patent application number | Description | Published |
|---|---|---|
| 20110174371 | METHOD FOR LIMITING EPITAXIAL GROWTH IN A PHOTOELECTRIC DEVICE WITH HETEROJUNCTIONS AND PHOTOELECTRIC DEVICE - A method for limiting epitaxial growth in a photoelectric device with heterojunctions including a crystalline silicon substrate and at least one layer of amorphous or microcrystalline silicon, wherein the method is characterised in that it includes the step of texturing the crystalline silicon surface. | 07-21-2011 |