Patent application number | Description | Published |
20100157455 | TEST DEVICE FOR MAGNETIC STORAGE DEVICE, MAGNETIC STORAGE DEVICE, AND METHOD OF MANUFACTURING MAGNETIC STORAGE DEVICE - According to one embodiment, a test device for a storage device includes: a module configured to acquire from the storage device a value corresponding to a signal level read from a magnetic disk through a magnetic head of the storage device, at a first timing at which an initial power of 0 or greater is supplied to a heater in the head and at a second timing at which a power to the heater is returned to the initial power after the power to the heater has been increased from the initial power, a periphery of a head element in the head has been expanded by the heater, and the element has been protruded toward a magnetic disk side; and a determiner configured to determine whether plastic deformation has occurred in the periphery of the element based on a difference between the values obtained at the first and second timings. | 06-24-2010 |
20110292532 | STORAGE DEVICE AND METHOD FOR CONTROLLING PROJECTION AMOUNT OF HEAD - According to one embodiment, a storage device includes a recording medium, a driving module, a head, a conductive body, a write-verify module, and a projection amount controller. A conductive body is mounted on the head, and changes a projection amount of the head by thermally expanding the head with heat from a current carried by the conductive body. The write-verify module executes a write-verify check to check whether content written in any location on the recording medium is correct when the driving module starts rotating the recording medium. The projection amount controller controls the projection amount of the head by adding a first value to a current in a steady state carried by the conductive body if the content is correct, and adding a second value with an absolute value greater than that of the first value to the current in the steady state if the content is not correct. | 12-01-2011 |
20120262455 | THREE-DIMENSIONAL MEASUREMENT APPARATUS, MODEL GENERATION APPARATUS, PROCESSING METHOD THEREOF, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A three-dimensional measurement apparatus generates a plurality of view-point images obtained by observing a measurement object from a plurality of different view-points using a three-dimensional geometric model, detects edges of the measurement object from the plurality of view-point images as second edges, calculates respective reliabilities of first edges of the three-dimensional geometric model based on a result obtained when the second edges are associated with the first edges, weights each of the first edges based on the respective reliabilities, associates third edges detected from a captured image with the weighted first edges, and calculates a position and an orientation of the measurement object based on the association result. | 10-18-2012 |
20120294534 | GEOMETRIC FEATURE EXTRACTING DEVICE, GEOMETRIC FEATURE EXTRACTING METHOD, STORAGE MEDIUM, THREE-DIMENSIONAL MEASUREMENT APPARATUS, AND OBJECT RECOGNITION APPARATUS - A geometric feature extracting device comprising: first input means for inputting a three-dimensional shape model of a measurement object; generation means for generating two-dimensional parameter planes corresponding to curved surface patches that configure the three-dimensional shape model; first calculation means for calculating normal directions to points on the curved surface patches; holding means for holding the parameter planes and the normal directions in association with each other; second input means for inputting an observation direction used to observe the measurement object from an observation position; selection means for selecting regions in each of which the normal direction and the observation direction satisfy a predetermined angle condition from the parameter planes; and second calculation means for calculating geometric features on three-dimensional shape model corresponding to regions selected by the selection means as geometric features that configure geometric feature regions on the three-dimensional shape model, which are observable from the observation position. | 11-22-2012 |
20130001713 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME - According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer. | 01-03-2013 |
20130009259 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME - According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film. | 01-10-2013 |
20130010532 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME - According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W. | 01-10-2013 |
20130056349 | SPUTTERING TARGET AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING THE SAME - Provided are a sputtering target including a target main body | 03-07-2013 |
20130271577 | INFORMATION PROCESSING APPARATUS AND METHOD - An information processing apparatus includes a model storing unit configured to store a three-dimensional form model for acquiring the position and posture of a measurement target object, an image acquiring unit configured to acquire an image of the measurement target object, a first position and posture acquiring unit configured to acquire a first position and posture of the three-dimensional form model in a first coordinate system on the basis of a first geometric feature of the three-dimensional form model and a first geometric feature within the image, and a second position and posture acquiring unit configured to acquire a second position and posture of the three-dimensional form model in a second coordinate system that is different from the first coordinate system on the basis of a second geometric feature of the three-dimensional form model and a second geometric feature within the image and the first position and posture. | 10-17-2013 |
20130272578 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND PROGRAM - An information processing apparatus includes a first setting unit setting a relative position-posture relationship between a 3D-shaped model of an object and a viewpoint from which the model is observed as a base position-posture, a detector detecting geometric features of the model observed from the viewpoint in the base position-posture as base geometric features, a second setting unit setting a relative position-posture relationship between the model and a viewpoint as a reference position-posture, a retrieval unit retrieving reference geometric features corresponding to the base geometric features of the model observed from the viewpoint in the reference position-posture, a first calculation unit calculating similarity degrees between the base geometric features and the reference geometric features, and a second calculation unit calculating evaluation values of correspondences between the base geometric features and the reference geometric features in accordance with the similarity degrees. | 10-17-2013 |
20140067126 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD AND STORAGE MEDIUM - There is provided with an information processing apparatus. An image including a target object is acquired. A coarse position and orientation of the target object is acquired. Information of a plurality of models which indicate a shape of the target object with different accuracy is held. A geometrical feature of the target object in the acquired image is associated with a geometrical feature indicated by at least one of the plurality of models placed at the coarse position and orientation. A position and orientation of the target object is estimated based on the result of association. | 03-06-2014 |
20140119109 | MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer. | 05-01-2014 |
20140124884 | SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a semiconductor storage device is disclosed. The device includes first magnetic layer, second magnetic layer, first nonmagnetic layer between them. The first magnetic layer includes a structure in which first magnetic material film, second magnetic material film, and nonmagnetic material film between the first and second magnetic material films are stacked. The first magnetic material film is nearest to the first nonmagnetic layer in the first magnetic layer. The nonmagnetic material film includes at least one of Ta, Ar, Nb, Mo, Ru, Ti, V, Cr, W, Hf. The second magnetic material film includes a stacked materials, including first magnetic material nearest to the first nonmagnetic layer among the stacked materials, and second magnetic material which is same magnetic material as the first magnetic material and has smaller thickness than the first magnetic material. | 05-08-2014 |
20140131823 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME - According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W. | 05-15-2014 |
20150084142 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY USING THE SAME - According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W. | 03-26-2015 |
20150120054 | INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD - An orientation designated in advance as an orientation that a grip unit is to take to grip an object having a shape of rotational symmetry with respect to at least one axis is acquired as a reference orientation. The relative position and orientation of the object and grip unit when the grip unit grips the object is acquired as a taught position and orientation. The position and orientation of the object is recognized from an image, and an initial position and initial orientation in which the grip unit grips the object are derived based on the recognized and taught positions and orientations. A grip orientation to grip the object is decided based on the reference and the initial orientation, and a grip position and orientation in which the grip unit grips the object is decided based on the grip orientation and the initial position. | 04-30-2015 |
20150283704 | INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD - In order to reliably and efficiently teach a robot hand a position-and-orientation allowing the robot hand to approach a work a three-dimensional position-and-orientation of which is recognized by a vision system, an information processing apparatus includes a position-and-orientation acquisition unit configured to acquire a position-and-orientation of a holding unit in a state where the holding unit holds a target object, a target object position-and-orientation acquisition unit configured to acquire a position-and-orientation of the target object in a state where the target object is held by the holding unit, and a derivation unit configured to derive a relative position-and-orientation of the holding unit and the target object based on the position-and-orientation of the holding unit acquired by the position-and-orientation acquisition unit and the position-and-orientation of the target object acquired by the target object position-and-orientation acquisition unit. | 10-08-2015 |
Patent application number | Description | Published |
20110136031 | FUEL CELL SYSTEM AND ELECTRONIC DEVICE - According to an embodiment, in a fuel cell system, a power generator generates electric power with fuel in a fuel cell unit, first and second temperature detectors detect an ambient temperature and a generator temperature of a power generator in the fuel cell unit, respectively. A storage unit stores control temperatures corresponding to a plurality of temperature ranges to which the ambient temperature belong, and a control temperature setting unit determines corresponding one of the temperature ranges based on the ambient temperature, and sets one of the control temperatures which corresponds to the one of the determined temperature ranges. A control unit controls the amount of fuel supplied to the power generator according to the result of comparing the one of the control temperatures with the output of the second temperature detector. | 06-09-2011 |
20120028161 | FUEL CELL - According to one embodiment, a fuel cell includes a membrane electrode assembly including a plurality of anodes, a plurality of cathodes each forming a pair with a corresponding one of the plurality of anodes, and an electrolyte membrane interposed between the anodes and the cathodes, a current collector configured to interpose the membrane electrode assembly in between, a fuel supply mechanism arranged on the side of the anodes of the membrane electrode assembly and configured to supply the anodes with a fuel, and a moisturizing layer arranged on the side of the cathodes of the membrane electrode assembly. The current collector includes a slit arranged so as to face a region between the cathodes. | 02-02-2012 |
20120231361 | FUEL CELL - A fuel cell has a fuel cell main body, a fuel supply unit, a voltage sensor, a supply speed determining unit, a fuel supply control unit, and a connecting unit. The voltage sensor measures the open-circuit voltage of the fuel cell main body. The supply speed determining unit determines the fuel supply speed of the fuel supply unit, on the basis of the results obtained from the measurement performed by the voltage sensor, in the case where the voltage measured by the voltage sensor is smaller than a predetermined value. The fuel supply control unit controls, on the basis of the supply speed thus determined, the fuel supply from the fuel supply unit. The connecting unit connects a load to the fuel cell main body, in the case where the voltage measured by the voltage sensor is larger than the predetermined value. | 09-13-2012 |
20140147761 | FUEL CELL - A fuel cell has a fuel cell main body, a fuel supply unit, a voltage sensor, a supply speed determining unit, a fuel supply control unit, and a connecting unit. The voltage sensor measures the open-circuit voltage of the fuel cell main body. The supply speed determining unit determines the fuel supply speed of the fuel supply unit, on the basis of the results obtained from the measurement performed by the voltage sensor, in the case where the voltage measured by the voltage sensor is smaller than a predetermined value. The fuel supply control unit controls, on the basis of the supply speed thus determined, the fuel supply from the fuel supply unit. The connecting unit connects a load to the fuel cell main body, in the case where the voltage measured by the voltage sensor is larger than the predetermined value. | 05-29-2014 |
Patent application number | Description | Published |
20140284534 | MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF - According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a first magnetic layer having a variable magnetization direction. A first nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer having a fixed magnetization direction is provided on the first nonmagnetic layer. The first magnetic layer, the first nonmagnetic layer and the second magnetic layer are preferredly oriented in a cubical crystal (111) plane. | 09-25-2014 |
20140284539 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer. | 09-25-2014 |
20140284733 | MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element comprises a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W. | 09-25-2014 |
20140284735 | MAGNETORESISTANCE EFFECT ELEMENT - According to one embodiment, a magnetoresistance effect element includes a reference layer, a shift canceling layer, a storage layer provided between the reference layer and the shift canceling layer, a tunnel barrier layer provided between the reference layer and the storage layer, and a spacer layer provided between the shift canceling layer and the storage layer, wherein a pattern of the storage layer is provided inside a pattern of the shift canceling layer when the patterns of the storage layer and the shift canceling layer are viewed from a direction perpendicular to the patterns of the storage layer and the shift canceling layer. | 09-25-2014 |
20140284742 | MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer. | 09-25-2014 |
20140286084 | MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing O, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer. The second reference layer has a higher standard electrode potential than the underlayer. | 09-25-2014 |
20150179926 | MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing O, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer. The second reference layer has a higher standard electrode potential than the underlayer. | 06-25-2015 |
Patent application number | Description | Published |
20150068887 | MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT AND MANUFACTURING APPARATUS OF THE SAME - According to one embodiment, a method of manufacturing a magnetoresistive element includes intermittently exposing a surface of a base substrate to sputter particles from a sputter target, and thereby forming a thin film on the base substrate. | 03-12-2015 |
20150069542 | MAGNETO-RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a magneto-resistive element, includes forming a first ferromagnetic layer on a substrate, forming a tunnel barrier layer on the first ferromagnetic layer, forming a second ferromagnetic layer containing B on the tunnel barrier layer, exposing a laminate of the first ferromagnetic layer, the tunnel barrier layer, and the second ferromagnetic layer under a pressurized atmosphere, and annealing the laminate while being exposed to the pressurized atmosphere, thereby promoting the orientation of the second magnetic layer. | 03-12-2015 |
20150069543 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a magnetoresistive element includes forming a first ferromagnetic layer on a base substrate, forming a tunnel barrier layer on the first ferromagnetic layer, forming a second ferromagnetic layer containing B on the tunnel barrier layer, and performing annealing in a gas-phase atmosphere including a gas, after formation of the second ferromagnetic layer, the gas producing a reaction product with B, the reaction product having a melting point lower than a treatment temperature. | 03-12-2015 |
20150069544 | MAGNETO-RESISTIVE ELEMENT - According to one embodiment, magneto-resistive element, includes a first ferromagnetic layer formed on an underlying substrate, a tunnel barrier layer formed on the first ferromagnetic layer, a second ferromagnetic formed on the tunnel barrier layer and a cap layer formed on the second ferromagnetic layer, and a surface tension of the cap layer is equal to or less than that of the second ferromagnetic layer. | 03-12-2015 |
20150069553 | MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, and a magnetoresistive element provided on the substrate. The magnetoresistive element includes a first magnetic layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer or the second magnetic layer includes a first region, second region, and third region whose ratios of crystalline portion are higher in order closer to the tunneling barrier. | 03-12-2015 |
20150069554 | MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metallic material, a stacked body formed above the conductive layer and including a first magnetic layer containing a second metallic material, a second magnetic layer, and a tunnel barrier layer formed between the first magnetic layer and the second magnetic layer, and an insulating layer formed on a side face of the stacked body and containing an oxide of the first metallic material. A standard electrode potential of the first metallic material is lower than the standard electrode potential of the second metallic material. | 03-12-2015 |
20150070128 | MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer. | 03-12-2015 |
20150259788 | SPUTTERING APPARATUS AND MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT - According to one embodiment, a sputtering apparatus includes a first chamber configured to form a magnetic film on a substrate and a second chamber configured to form a non-magnetic film on the substrate, which are disposed to be adjacent to each other so that the substrate is conveyable between the chambers. A magnetic target is provided in the first chamber, and a non-magnetic target and a low dielectric-constant target having a dielectric constant lower than that of the non-magnetic target are provided in the second chamber. Here, before the non-magnetic target is formed on the substrate by sputtering, the low dielectric-constant target is subjected to sputtering in the second chamber, thereby depositing a low dielectric-constant material on the inner surface of the second chamber. | 09-17-2015 |
20150263271 | MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer. | 09-17-2015 |
20160072046 | MAGNETORESISTIVE ELEMENT AND MANUFACTURING METHOD THEREOF - According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer. | 03-10-2016 |
20160099287 | MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material. | 04-07-2016 |
20160099288 | MAGNETIC MEMORY AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer and an underlying layer provided on an opposite side of the first magnetic layer with respect to the intermediate layer, and the underlying layer contains AlN of a hcp structure. | 04-07-2016 |
20160099408 | MANUFACTURING METHOD FOR INSULATING FILM AND MANUFACTURING APPARATUS FOR THE SAME - According to one embodiment, a method of manufacturing an insulating film, includes forming an insulating film on a substrate by sputtering, measuring a thickness of the insulating film at a plurality of locations, and irradiating a surface portion of the insulating film with X rays or ions, based on the measured thickness. | 04-07-2016 |