| Patent application number | Description | Published |
|---|
| 20080252513 | RADAR SYSTEM - The radar system includes: a transmission circuit transmitting the radar waves via a transmission antenna; a receiving circuit receiving the reflected waves via a receiving antenna; a delay line having an end connected to aid transmission circuit and the other end connected to said receiving circuit, which delays the radar waves by a predetermined delay amount; a correlation circuit/coherent detection circuit which detects a waveform having a strength equal to or higher than a predetermined strength, from a signal provided from said receiving circuit which obtains the signal from the reflected waves or the delayed radar waves; and a level decision circuit which judges, during self-diagnosis, whether or not the detected waveform is a waveform of the delayed radar wave according to the predetermined delay amount, and if the waveform is not the waveform of the delayed radar wave, determines that abnormality occurs in said radar system. | 10-16-2008 |
| 20080266012 | METHOD FOR CONTROLLING HIGH-FREQUENCY RADIATOR - A method for controlling a high-frequency radiator includes the steps of: (a) applying a high-frequency radiation through the solid-state oscillator and the antenna; (b) sensing part of the high-frequency radiation returned from the antenna to the solid-state oscillator; (c) adjusting radiation/propagation conditions for the high-frequency radiation on the basis of the sensed results in the step (b), the high-frequency radiation propagating from the solid-state oscillator to the antenna; and (d) after the step (c), applying the high-frequency radiation through the solid-state oscillator and the antenna to a target object. In the step (c), the oscillation frequency of the solid-state oscillator, the power of the high-frequency radiation applied by the solid-state oscillator, the power supply voltage supplied to the solid-state oscillator, the impedance match between the output impedance of the solid-state oscillator and the impedance of the antenna, or any other condition is changed. | 10-30-2008 |
| 20080272454 | Light-Collecting Device, Solid-State Imaging Apparatus and Method of Manufacturing Thereof - It is realized a high sensitive solid-state imaging apparatus which corresponds to an optical system having a short focal length (an optical system having a large incident angle θ). | 11-06-2008 |
| 20080303058 | SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid state imaging device includes a pixel having a photoelectric conversion element formed on a semiconductor substrate. The photoelectric conversion element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and forming a junction therebetween; a third semiconductor layer formed on the second semiconductor layer and having a smaller band gap energy than the second semiconductor layer, the third semiconductor layer being made of a single-crystal semiconductor and containing an impurity; and a fourth semiconductor layer of the first conductivity type covering a side surface and an upper surface of the third semiconductor layer. Provision of the fourth semiconductor layer can reduce a current flowing in dark conditions. | 12-11-2008 |
| 20080303162 | SEMICONDUCTOR DEVICE - A semiconductor device includes a layered structure including a first nitride semiconductor layer and a second nitride semiconductor layer that are sequentially formed over a substrate in this order. The second nitride semiconductor layer has a wider bandgap than the first nitride semiconductor layer. A first electrode and a second electrode are formed spaced apart from each other on the layered structure. A first insulating layer with a high breakdown field is formed in a region with electric field concentration between the first electrode and the second electrode over the layered structure. The first insulating layer has a higher breakdown field than air. | 12-11-2008 |
| 20090009621 | Solid-State Imaging Device, Signal Processing Method, and Camera - A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light. | 01-08-2009 |
| 20090014752 | SEMICONDUCTOR LIGHT SOURCE AND LIGHT-EMITTING DEVICE DRIVE CIRCUIT - A semiconductor light source includes a light-emitting device | 01-15-2009 |
| 20090028563 | OPTICAL TRANSMISSION/RECEPTION DEVICE AND OPTICAL COMMUNICATION SYSTEM USING THE SAME - An optical transmission/reception device includes at least one light emitting portion and at least one light receiving portion on the same substrate. The light emitting portion includes at least a lower multilayer reflector and an active layer provided on the lower multilayer reflector. A metal layer including a plurality of opening portions is provided in an upper portion of the light emitting portion. Each of the opening portions has a size smaller than a light emission wavelength of the light emitting portion. | 01-29-2009 |
| 20090073025 | RADAR APPARATUS, METHOD FOR CONTROLLING THE SAME, AND VEHICLE INCLUDING THE SAME - Provided is a radar apparatus that detects an object, and includes: an oscillating unit for generating carrier waves; first and second transmission units for spreading the carrier waves, respectively using a first pseudo-random code and a second pseudo-random code different from the first pseudo-random code; a first transmission antenna for transmitting the carrier waves spread by the first transmission unit; a second transmission antenna for transmitting the carrier waves spread by the second transmission unit and have a directional characteristic different from that of the carrier waves transmitted by the first transmission antenna; a reception antenna for receiving reflected waves that are the carrier waves that have been transmitted by the first and second transmission antennas and have been reflected from the object; and a reception unit for despreading the reflected waves, using the first pseudo-random code and despreading the reflected waves, using the second pseudo-random code. | 03-19-2009 |
| 20090078943 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride semiconductor device mainly made of a nitride semiconductor material having excellent heat dissipation characteristics and great crystallinity and a method for manufacturing thereof are provided. The method for manufacturing the nitride semiconductor includes vapor-depositing a diamond layer on a silicon substrate, bonding an SOI substrate on a surface of the diamond layer, thinning the SOI substrate, epitaxially growing an GaN layer on the thinned SOI substrate, removing the silicon substrate, and bonding, on a rear-surface of the diamond layer, a material having a thermal conductivity greater than a thermal conductivity of the silicon substrate. The SOI substrate has an outermost surface layer and a silicon oxide layer. In the thinning, the SOI substrate is thinned by selectively removed through the silicon oxide layer, so that only the outermost surface layer is left. | 03-26-2009 |
| 20090121775 | TRANSISTOR AND METHOD FOR OPERATING THE SAME - In a transistor, an AlN buffer layer | 05-14-2009 |
| 20090135875 | SEMICONDUCTOR LASER AND METHOD FOR FABRICATING THE SAME - A semiconductor laser ( | 05-28-2009 |
| 20090250779 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A solid-state imaging device in the present invention includes plural photoelectric conversion elements, plural wiring layers, and plural optical waveguide regions each corresponding to and arranged over one of the plural photoelectric conversion elements. A top end of each of the plural optical waveguide regions is higher than a top end of at least one of the plural wiring layers. A bottom end of each of the plural optical waveguide regions is lower than a bottom end of at least one of the plural wiring layers. The plural optical waveguide regions include plural types of optical waveguide regions each having different light absorbing characteristics. | 10-08-2009 |
| 20100090250 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride. | 04-15-2010 |
| 20100097105 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack | 04-22-2010 |
| 20100172387 | NITRIDE SEMICONDUCTOR LASER DIODE - A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror. | 07-08-2010 |
| 20100237967 | CIRCUIT DEVICE - A circuit device includes a substrate 11, and a transmission line | 09-23-2010 |
| 20100327320 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum. | 12-30-2010 |
| 20110012173 | SEMICONDUCTOR DEVICE - A semiconductor device includes an undoped GaN layer ( | 01-20-2011 |
