| Patent application number | Description | Published |
|---|
| 20080211981 | DISPLAY DEVICE - The present invention relates to a technique for preventing the occurrence of a contact defect or exfoliation caused by a Mo oxide layer that is produced on a surface of a conductive layer when a coating type insulating film is applied onto a conductive layer made of a Mo or Mo-alloy. A display device (e.g., a liquid crystal display device) of the present invention has a first substrate, wherein the first substrate includes a first conductive layer composed of a Mo or Mo-alloy layer, a coating type insulating film formed above the first conductive layer, and a second conductive layer composed of an Al or Al-alloy layer (or Ti or Ti-alloy layer) formed on the conductive layer and wherein the coating type insulating film is formed on the second conductive layer. | 09-04-2008 |
| 20090073359 | Liquid Crystal Display Device - Reflective electrodes having unevenness are formed on a resin layer of a TFT substrate. A coating-type ITO film having a film thickness of 0.5 μm to 1 μm which constitute a pixel electrode is applied to the reflective electrode. A surface of the coating-type ITO film is leveled. A capacitive insulation film is formed on the pixel electrode, and a comb-teeth-shaped common electrode is formed on the capacitive insulation film. When a voltage is applied between the common electrode and the pixel electrode, liquid crystal is controlled by a leaked electric field. Since the common electrode is formed in a planar plane, a thickness of a liquid crystal layer can be made uniform. | 03-19-2009 |
| 20090218574 | Display device and manufacturing method therefor - A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers. | 09-03-2009 |
| 20090273751 | LIQUID CRYSTAL DISPLAY DEVICE AND DIELECTRIC FILM USABLE IN THE LIQUID CRYSTAL DISPALY DEVICE - The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more. | 11-05-2009 |
| 20100096645 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films. | 04-22-2010 |
| 20100201932 | LIQUID CRYSTAL DISPLAY DEVICE - An IPS liquid crystal display device having comb-teeth-shaped pixel electrodes which can prevent image retention while ensuring reliability of through hole portions and reliability of terminal area is provided. In an IPS liquid crystal display device having comb-teeth-shaped pixel electrodes, image retention occurs when rubbing is not applied to a gap defined between the comb-teeth-shaped electrodes. The pixel electrodes, through holes which supply a voltage to the pixel electrodes and a terminal area are formed of an ITO film. By setting a film thickness of only the ITO film for forming the pixel electrodes smaller than a film thickness of the ITO film formed at the through holes and a film thickness of the ITO film for forming the terminal area, it is possible to sufficiently apply rubbing to a gap between the comb-teeth-shaped electrodes which constitute the pixel electrodes. | 08-12-2010 |
| 20110001910 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device according to the invention includes a first substrate, on a surface of which are formed: a first color film which has a color other than black, and one portion of which configures a first pixel; a second color film, one portion of which configures a second pixel adjacent to the first pixel; a third color film, at least one portion of which configures a third pixel; and a fourth color film, a second substrate, and a liquid crystal layer sandwiched between the first substrate and second substrate, wherein the first color film and second color film have a first overlapping portion in which they overlap each other in the boundary between the first pixel and second pixel, and the fourth color film, being formed on the first overlapping portion, configures a post spacer which defines the space between the first substrate and second substrate. | 01-06-2011 |
| 20110024763 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region. | 02-03-2011 |
