| Patent application number | Description | Published |
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| 20100159687 | SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 06-24-2010 |
| 20110014783 | SEMICONDUCTOR DEVICE HAVING ELECTRODE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film. | 01-20-2011 |
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| 20080198411 | IMAGE FORMING APPARATUS AND ACTIVATING METHOD THEREOF - An image forming apparatus includes a memory interface configured to receive an external memory, an internal memory, a reading unit, a writing unit, and an activating unit. The activating unit activates the image forming apparatus when an external memory is connected to the memory interface and model data read from the external memory by the reading unit is the same as model data about the image forming apparatus stored in the internal memory. | 08-21-2008 |
| 20080297838 | IMAGE FORMING APPARATUS - An image forming apparatus includes a setting-information storage unit that stores plural pieces of print setting information each indicating a list of settings on printing, in association with logical printer names, a data receiving unit that receives PJL data, print drawing data, and a logical printer name from a client terminal, a parameter setting unit that compares settings included in the received PJL data and the settings in the print setting information that is stored in the setting-information storage unit and corresponds to the received logical printer name, to specify the settings included in the PJL data as print parameters, and a printing unit that prints the print drawing data using the specified print parameters | 12-04-2008 |
| 20090190164 | Method and apparatus for forming image - In an image forming apparatus, a setting management unit acquires at least one of first setting data and second setting data. The first setting data is information that specifies data to be included in the identification image from among the identification data and the second setting data is information that specifies a position of the identification image. An output control unit outputs (e.g., prints) output data including the identification image that is created based on at least one of the first setting data and the second setting data that is acquired by the setting management unit. | 07-30-2009 |
| 20090310182 | METHOD AND APPARATUS FOR FORMING IMAGE AND RECORDING MEDIUM - One or more among a PC document receive filter, a FAX document receive filter, a read filter, and a readout filter create a report on each of the corresponding functions in a format common to the functions. A report filter changes a format of the created report as desired by the user. Therefore, when a setting for a report output process is changed, it is not necessary to change the setting with respect to each of the functions. Thus, it is possible to reduce development man-hours for the report output process. | 12-17-2009 |
| 20110007353 | IMAGE FORMING APPARATUS AND COMPUTER READABLE MEDIUM - A disclosed image forming apparatus includes a filter detection part that detects the filter when the external medium is connected; a filter identification information obtaining part that obtains filter identification information that identifies a filter set by a user from filter setting information when print data subject to printing is received, wherein the filter setting information regarding the filter is added to the print data; a first output part that outputs the print data to the filter via the input/output interface, in accordance with the filter identification information; an input part that inputs the print data on which a predetermined process has been carried out by the filter via the input/output interface; and a second output part that outputs the print data on which the predetermined process has been carried out by the filter to a page description language module. | 01-13-2011 |
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| 20090014775 | SEMICONDUCTOR NONVOLATILE MEMORY DEVICE - An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. | 01-15-2009 |
| 20090050955 | NONVOLATILE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A charge storage layer interposed between a memory gate electrode and a semiconductor substrate is formed shorter than a gate length of the memory gate electrode or a length of insulating films so as to make the overlapping amount of the charge storage layer and a source region to be less than 40 nm. Therefore, in the write state, since the movement in the transverse direction of the electrons and the holes locally existing in the charge storage layer decreases, the variation of the threshold voltage when holding a high temperature can be reduced. In addition, the effective channel length is made to be 30 nm or less so as to reduce an apparent amount of holes so that coupling of the electrons with the holes in the charge storage layer decreases; therefore, the variation of the threshold voltage when holding at room temperature can be reduced. | 02-26-2009 |
| 20090122609 | SEMICONDUCTOR DEVICE - A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section. | 05-14-2009 |
| 20100038700 | Semiconductor Device - A semiconductor memory array includes a first nonvolatile memory cell having a first charge storage layer and a first gate electrode and a second nonvolatile memory cell, adjacent to the first memory cell in a first direction, having a second charge storage layer and a second gate electrode. The first and second electrodes extend in a second direction perpendicular to the first direction, the first electrode has a first contact section extending toward the second electrode in the first direction, and the second electrode has a second contact section extending toward the first electrode in the first direction. The first and second contact positions are shifted in the second direction, respectively, and the first electrode and the first contact section are electrically separated from the second electrode and the second contact section. | 02-18-2010 |
| 20100232231 | SEMICONDUCTOR NONVOLATILE MEMORY DEVICE - An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. | 09-16-2010 |
| 20110001179 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - In a non-volatile memory in which charge is injected from a gate electrode to a charge accumulating layer, charge injection efficiency, charge retention characteristic and reliability are all improved compared with a conventional gate structure. In a nonvolatile memory which carries out write/erasure by changing the total charge amount by injecting electrons and holes into a silicon nitride film which makes up a charge accumulating layer, in order to highly efficiently carry out charge injection from a gate electrode, the gate electrode of a memory cell is made up of a two-layer film of a non-doped polysilicon layer and a metal material electrode layer. | 01-06-2011 |
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| 20080198404 | IMAGE FORMING APPARATUS AND PRINT CONTROL METHOD USED THEREIN - An image forming apparatus, connected to an information processing device via a network, includes a receiving section, a memory, an interpretation section, and a transmission section. The receiving section receives a plurality of pieces of print data from the information processing device via the network. The plurality of pieces of print data include first print data for normal printing, second print data for interruption printing, and third print data. The memory has first to third buffers. The first and second buffers store the first and second print data, respectively. The third buffer stores the third print data during execution of the interruption printing of the second print data. The interpretation section interprets the plurality of pieces of print data. The transmission section transmits a reply message to the information processing device in accordance with a result of the third print data interpreted by the interpretation section. | 08-21-2008 |
| 20080285997 | Image forming apparatus, image forming method, and storage medium - An image forming apparatus, an image forming method, and a storage medium. The image forming apparatus includes a memory, a frame creator to create at least one rendering frame in the memory, a renderer to render rendering data on the at least one rendering frame based on print data, and a control device to arrange the rendering data according to a sequence of the print data in duplex printing. | 11-20-2008 |
| 20090296161 | Image forming apparatus, print processing method, and recording medium - An image forming apparatus to print an image on a recording medium based on print data. The image forming apparatus includes a storing unit to store the print data, an image processing unit to perform image processing on image data included in the print data; a printing operation specification unit to specify implementation of a printing operation; a marking unit to embed marking data in the image data, a marking printing operation specification unit to specify implementation of a marking printing operation, a printing operation implementation unit to implement the printing operation or the marking printing operation, a print data determination unit to determine whether or not the print data includes a setting for the marking printing operation, and a printing operation change unit to change a printing operation performed by the printing operation implementation unit. | 12-03-2009 |
