| Patent application number | Description | Published |
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| 20080197403 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel insulating film, a floating gate electrode, a control gate electrode, an inter-electrode insulating film between the floating and control gate electrodes, and an electrode side-wall insulating film on side-wall surfaces of the floating and control gate electrodes, the electrode side-wall insulating film including first and second insulating films having first and second dielectric constants, the first dielectric constant being higher than the second dielectric constant, the second dielectric constant being higher than a dielectric constant of a silicon nitride film, the first insulating film being in a central region of a facing region between the floating and control gate electrodes, the second insulating region being in the both end regions of the facing region and protruding from the both end portions. | 08-21-2008 |
| 20100136780 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon. | 06-03-2010 |
| 20100197130 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film. | 08-05-2010 |
| 20110012190 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, the second insulating film including a lower silicon nitride film, a lower silicon oxide film formed on the lower silicon nitride film, an intermediate insulating film formed on the lower silicon oxide film and containing a metal element, the intermediate insulating film having a relative dielectric constant of greater than 7, an upper silicon oxide film formed on the intermediate insulating film, and an upper silicon nitride film formed on the upper silicon oxide film. | 01-20-2011 |
| Patent application number | Description | Published |
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| 20080277716 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate having a device formation region, a tunnel insulating film formed on the device formation region, a floating gate electrode formed on the tunnel insulating film, isolation insulating films which cover side surfaces of the device formation region, side surfaces of the tunnel insulating film, and side surfaces of a lower portion of the floating gate electrode, an inter-electrode insulating film which covers an upper surface and side surfaces of an upper portion of the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein upper corner portions of the floating gate electrode are rounded as viewed from a direction parallel with the upper surface and the side surfaces of the upper portion of the floating gate electrode. | 11-13-2008 |
| 20090001448 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device having a cell size of 60 nm or less includes a tunnel insulation film formed in a channel region of a silicon substrate containing a burying insulation film, a first conductive layer formed on the tunnel insulation film, an inter-electrode insulation film formed on the burying insulation film and the first conductive layer, a second conductive layer formed on the inter-electrode insulation film, a side wall insulation film formed on the side walls of the first conductive layer, the second conductive layer, and the inter-electrode insulation film, and an inter-layer insulation film formed on the side wall insulation film. The tunnel insulation film or the inter-electrode insulation film contains a high-dielectric insulation film. The side wall insulation film contains a predetermined concentration of carbon and nitrogen as well as chlorine having a concentration of 1×10 | 01-01-2009 |
| 20090256192 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - In a nonvolatile semiconductor memory device where a tunnel insulating film, a charge storage layer, a blocking insulating film, and a control gate are stacked one on top of another on a semiconductor substrate, with an element isolation insulating film buried between adjacent cells, a barrier layer composed of at least one of a silicon nitride film, a silicon oxynitride film, and a silicon oxide film which has a higher density than that of the element isolation insulating film is provided at the interface between the element isolation insulating film and the blocking insulating film or between the element isolation film and the control gate. | 10-15-2009 |
| 20090273021 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate, a tunnel insulating film on the semiconductor substrate, a charge storage layer on the tunnel insulating film, a block insulating film on the charge storage layer, and a control gate electrode on the block insulating film, the charge storage layer including a plurality of layers including first and second charge storage layers, the second charge storage layer being provided on a nearest side of the block insulating film, the first charge storage layer being provided between the tunnel insulating film and the second charge storage layer, the second charge storage layer having a higher trap density than the first charge storage layer, the second charge storage layer having a smaller band gap than the first charge storage layer, and the second charge storage layer having a higher permittivity than the first charge storage layer and a silicon nitride film. | 11-05-2009 |
| 20100006923 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a tunnel insulating film formed on a surface of a semiconductor region, a charge storage insulating film formed on a surface of the tunnel insulating film, a block insulating film formed on a surface of the charge storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the block insulating film includes a first insulating film containing a metal element and oxygen as main components, a second insulating film containing silicon and oxygen as main components, and an interface layer formed between the first insulating film and the second insulating film and containing the metal element, silicon, and oxygen as main components. | 01-14-2010 |
