Patent application number | Description | Published |
20090289367 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A copper interconnection layer is formed in an interconnection trench at a surface of an interlayer insulating film. A diffusion preventing insulating film is formed to cover the copper interconnection layer and is made of at least one of SiC and SiCN. An insulating film is formed on the copper interconnection layer with the diffusion preventing insulating film interposed and is made of SiN. | 11-26-2009 |
20100126523 | TWO-PART HAIR DYE OR BLEACH COMPOSITION - Foam quality and discharge properties are improved by using a squeeze container to discharge a mixed solution of first and second agents of a two-part hair cosmetic for hair dyeing or bleaching in a foam. A two-part hair cosmetic | 05-27-2010 |
20100151673 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %. | 06-17-2010 |
20100167525 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered. | 07-01-2010 |
20100327449 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen. The predetermined additive element reacts with nitrogen to form a high-resistance part. In addition, the concentration of the predetermined additive element is not more than 0.04 wt %. | 12-30-2010 |
20110101530 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A seal ring is provided between a region where a circuit is formed on a semiconductor substrate and a dicing region. The seal ring has a portion where sealing layers of which the cross sectional form is in T-shape are layered and a portion where sealing layers of which the cross sectional form is rectangular are layered. | 05-05-2011 |
20150086915 | ORGANIC PHOTORECEPTOR AND PRODUCTION PROCESS THEREOF - Disclosed is an organic photoreceptor which provides stable, high evenness of in-plane image density over a long period of time, and a production process of the organic photoreceptor. The organic photoreceptor includes a conductive support, an organic photosensitive layer, and a surface layer made of a cured resin, which are stacked in this order. The surface layer is obtained by curing a composition containing a radical polymerizable compound for forming the cured resin, metal oxide fine particles having a surface treated with a silane coupling agent, and a silane compound represented by the following general formula (1), | 03-26-2015 |
20150261107 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR - An electrophotographic photoreceptor includes an electrically conductive support, a photosensitive layer formed on the electrically conductive support and a surface layer formed on the photosensitive layer. The surface layer contains a resin produced by polymerizing a cross-linkable polymerizable compound, N-type semiconductor fine particles and P-type semiconductor fine particles. | 09-17-2015 |