| Patent application number | Description | Published |
|---|
| 20100129738 | POSITIVE RESIST COMPOSITION AND PATTERING PROCESS - A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). | 05-27-2010 |
| 20100304302 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS - A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R | 12-02-2010 |
| 20100316955 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS - A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents. | 12-16-2010 |
| 20110086986 | DEPROTECTION METHOD OF PROTECTED POLYMER - Provided is a method of deprotecting a protected polymer, the method being capable of, in the deprotection reaction of a polymer comprising a unit structure having a phenolic hydroxyl group protected with an acyl group, deacylating the polymer in a short period of time while maintaining the other structure, and being capable of taking out the deacylated polymer while highly suppressing contamination of the deacylated polymer with a substance other than the polymer taking part in the reaction. More specifically, provided is a method of deprotecting a protected polymer comprising at least a step of dissolving in an organic solvent the protected polymer comprising at least a unit structure having a phenolic hydroxyl group protected with an acyl group and a deprotecting reagent selected from primary or secondary amine compounds each having a ClogP value of 1.00 or less with the proviso that in the secondary amine compound, neither of the two carbon atoms coupled to the nitrogen atom of the amino group is tertiary. The primary or secondary amine compounds are each represented preferably by HNR | 04-14-2011 |
| 20110171579 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed. | 07-14-2011 |
| 20110200919 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A chemically amplified positive resist composition is provided comprising a polymer PB having an amine structure bound thereto and a polymer PA comprising recurring units having an acidic side chain protected with an acid labile protective group and recurring units having an acid generating moiety on a side chain. | 08-18-2011 |
| 20110200941 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS - A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A). | 08-18-2011 |
| 20110200942 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS - A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut. | 08-18-2011 |
