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Dahlstrom, US

Erik M. Dahlstrom, Burlington, VT US

Patent application numberDescriptionPublished
20080204068METHOD FOR ESTIMATING DEFECTS IN AN NPN TRANSISTOR ARRAY - A method for testing bipolar transistors in an integrated circuit includes first measuring first conductances of leakage paths between collectors and emitters of a first plurality of bipolar transistors with a known number of defects, calculating a per defect conductance value using the measured first conductances and the known number of defects to derive the linear relation. The method then measures second conductances of leakage path between collectors and emitters of a second plurality of bipolar transistors under test and having an unknown number of defects. Using the measured leakage path current from the second conductances and the linear relation, the number of defects related to the second plurality of bipolar transistors under test may be accurately determined.08-28-2008
20090101887SILICON GERMANIUM HETEROSTRUCTURE BARRIER VARACTOR - Methods and heterostructure barrier varactor (HBV) diodes optimized for application with frequency multipliers at providing outputs at submillimeter wave frequencies and above. The HBV diodes include a silicon-containing substrate, an electrode over the silicon-containing substrate, and one or more heterojunction quantum wells of alternating layers of Si and SiGe of one or more electrodes of the diode. Each SiGe quantum well preferably has a floating SiGe layer between adjacent SiGe gradients followed by adjacent Si layers, such that, a single homogeneous structure is provided characterized by having no distinct separations. The plurality of Si/SiGe heterojunction quantum wells may be symmetric or asymmetric.04-23-2009
20100093148SILICON GERMANIUM HETEROSTRUCTURE BARRIER VARACTOR - Methods and heterostructure barrier varactor (HBV) diodes optimized for application with frequency multipliers at providing outputs at submillimeter wave frequencies and above. The HBV diodes include a silicon-containing substrate, an electrode over the silicon-containing substrate, and one or more heterojunction quantum wells of alternating layers of Si and SiGe of one or more electrodes of the diode. Each SiGe quantum well preferably has a floating SiGe layer between adjacent SiGe gradients followed by adjacent Si layers, such that, a single homogeneous structure is provided characterized by having no distinct separations. The plurality of Si/SiGe heterojunction quantum wells may be symmetric or asymmetric.04-15-2010

Patent applications by Erik M. Dahlstrom, Burlington, VT US

Greg Dahlstrom, Post Falls, ID US

Patent application numberDescriptionPublished
20110232546Fluidized bed - A fluidized bed is described and which includes a multiplicity of fluidizing manifolds positioned in spaced relation one relative to the others; an enclosure positioned in gravity receiving relation relative to the multiplicity of fluidizing manifolds and which has an intake and a discharge end, and wherein particulate matter received in the fluidized bed moves under the influence of gravity from the intake end to the discharge end, and a moveable gate is mounted on the second discharge end of the enclosure and which is operable to selectively occlude a discharge aperture and which further facilitates the selective removal of particulate matter and waste material entrained with same, and which moves under the influence of gravity to the discharge end thereof.09-29-2011

Jacob A. Dahlstrom, Cottage Grove, MN US

Patent application numberDescriptionPublished
20100282167Linear Deposition Source - A deposition source includes a crucible for containing deposition material and a body comprising a conductance channel. An input of the conductance channel is coupled to an output of the crucible. A heater heats the crucible so that the crucible evaporates the deposition material into the conductance channel. A heat shield comprising a plurality of heat resistant material layers is positioned around at least one of the heater and the body. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.11-11-2010
20100285218Linear Deposition Source - A deposition source includes at least one crucible for containing deposition material. A body includes a conductance channel with an input coupled to an output of the crucible. A heater increases a temperature of the crucible so that the crucible evaporates the deposition material into the conductance channel. A plurality of nozzles is coupled to an output of the conductance channel so that evaporated deposition material is transported from the crucible through the conductance channel to the plurality of nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux. At least one of the plurality of nozzles includes a tube that is positioned proximate to the conductance channel so that the tube restricts an amount of deposition material supplied to the nozzle including the tube.11-11-2010

Jacob Allan Dahlstrom, Cottage Grove, MN US

Patent application numberDescriptionPublished
20100159132Linear Deposition Source - A deposition source includes a plurality of crucibles that each contains a deposition material. A heat shield provides at least partial thermal isolation for at least one of the plurality of crucibles. A body is included with a plurality of conductance channels. An input of each of the plurality of conductance channels is coupled to an output of a respective one of the plurality of crucibles. A heater increases a temperature of the plurality of crucibles so that each crucible evaporates the deposition material into the plurality of conductance channels. An input of each of a plurality of nozzles is coupled to an output of one of the plurality of conductance channels. Evaporated deposition materials are transported from the crucibles through the conductance channels to the nozzles where the evaporated deposition material is ejected from the plurality of nozzles to form a deposition flux.06-24-2010

J. Reeves Dahlstrom, Arvada, CO US

Patent application numberDescriptionPublished
20090092718Ultra-high temperature oven for processing fish and seafood - An oven and method of processing products such as fish and shellfish are disclosed. The oven may include a chamber that may be heated to ultra-high temperatures, such as within a range of about 600-2500° F. (315-1371° C.). A burner may heat the chamber from an exterior of the chamber such that the chamber may provide a uniform radiant heat inside the chamber. The products may be carried through the chamber on a conveyor belt to heat a surface of the products to brown and denature the surface, destroy microorganisms, and place grill marks on the products. The products may then be packaged in a microwavable package or boil-in-the-bag film such that the products may be cooked at a later time in a microwave oven or boiling water bath.04-09-2009

Mary Ann Dahlstrom, Katy, TX US

Patent application numberDescriptionPublished
20110232169FUEL COMPOSITIONS - A fuel composition having an enhanced thermal stability in a diesel fuel application is provided comprising a base fuel containing: 09-29-2011

Mattias E. Dahlstrom, Essex Junction, VT US

Patent application numberDescriptionPublished
20100320571BIPOLAR TRANSISTOR STRUCTURE AND METHOD INCLUDING EMITTER-BASE INTERFACE IMPURITY - A bipolar transistor structure and a method for fabricating the bipolar transistor structure include: (1) a collector structure located at least in-part within a semiconductor substrate; (2) a base structure contacting the collector structure; and (3) an emitter structure contacting the base structure. The interface of the emitter structure and the base structure includes an oxygen impurity and at least one impurity selected from the group consisting of a fluorine impurity and a carbon impurity, to enhance performance of a bipolar transistor within the bipolar transistor structure. The impurities may be introduced into the interface by plasma etch treatment, or alternatively a thermal treatment followed by an anhydrous ammonia and hydrogen fluoride treatment, of a base material from which is comprised the base structure.12-23-2010

Mattias E. Dahlstrom, Burlington, VT US

Patent application numberDescriptionPublished
20110309471TRANSISTOR STRUCTURE WITH A SIDEWALL-DEFINED INTRINSIC BASE TO EXTRINSIC BASE LINK-UP REGION AND METHOD OF FORMING THE STRUCTURE - Disclosed are embodiments of an improved transistor structure (e.g., a bipolar transistor (BT) structure or heterojunction bipolar transistor (HBT) structure) and a method of forming the transistor structure. The structure embodiments can incorporate a dielectric layer sandwiched between an intrinsic base layer and a raised extrinsic base layer to reduce collector-base capacitance C12-22-2011

Paul C. Dahlstrom, Hollis, NH US

Patent application numberDescriptionPublished
20090129988Reagent Container Pack - A reagent container pack for storing, preserving, and automatically unsealing and resealing a plurality of reagent containers in a reagent container pack on-board an automated clinical sample analyzer for analyzing analytes in a body fluid.05-21-2009
20100196202APPARATUS AND METHODS FOR DISPENSING SAMPLE HOLDERS - An apparatus and methods for dispensing sample holders for use in an automated sample analyzer is disclosed herein. The apparatus for dispensing sample holders includes a rotating carousel for housing stack of sample holders. Stacks of sample holders from the rotating carousel are fed into a chute where sample holders contact a set of rotating members having helical threads thereon. The helically threaded rotating members engage the sample containers and separate each sample holder from the remaining sample holders in the stack by rotation of the helically threaded rotating members. The sample holder can then be transferred for use in an automated sample analyzer.08-05-2010

Patent applications by Paul C. Dahlstrom, Hollis, NH US

Philip Robert Dahlstrom, Cleveland, OH US

Patent application numberDescriptionPublished
20090014482Feeder Element for Metal Casting - The present invention discloses a feeder element for use in metal casting, said feeder element comprising: (i) a first end for mounting on a mould pattern; (ii) an opposite second end for receiving a feeder sleeve,—and (iii) a bore between—the first and second ends defined by a stepped sidewall; said feeder element being compressible in use whereby to reduce the distance between the first and second ends, wherein the stepped sidewall has a first sidewall region defining the second end of the element and a mounting surface (01-15-2009

Robert Lawrence Dahlstrom, Cottage Grove, MN US

Patent application numberDescriptionPublished
20100031940Aerosol Separator; Components; and, Methods - Arrangements for use in crankcase ventilation are described and shown. Included are serviceable crankcase ventilation filter cartridges which include a media pack axial drain arrangement, for preferred, efficient, operation. A crankcase ventilation filter arrangements including a housing and such a serviceable cartridge is shown. Also shown and described are methods of assembly, operation and use.02-11-2010