Patent application number | Description | Published |
20110097561 | Optical Film and a Production Method Therefor - The present invention provides an optical film and s retardation film characterized in that each of them includes: an acrylic resin; and 20-65 parts by weight of at least two graft copolymers containing a conjugated diene-based rubber, based on 100 parts by weight of the acrylic resin, wherein at least two of the graft copolymers have different particle sizes. The present invention also provides a production method therefore. | 04-28-2011 |
20110297896 | ACRYLIC RESIN COMPOSITION, AND OPTICAL FILM COMPRISING SAME - The present invention relates to an acrylic copolymer resin containing: 1) an alklyl (meth)acrylate-based monomer; 2) a (meth)acrylate-based monomer containing an aliphatic ring and/or an aromatic ring; and 3) at least an imide-based monomer or a styrene-based monomer, to a resin composition containing said acrylic copolymer resin and a resin containing an aromatic ring and/or an aliphatic ring in the main chain thereof, to an optical film comprising said resin composition, and to a liquid crystal display device comprising said optical film. The optical film according to the present invention has excellent heat resistance, optical transparency, etc. | 12-08-2011 |
20130150546 | HIGHLY HEAT RESISTANT AND HIGHLY STRONG ACRYLIC COPOLYMER, A RESIN COMPOSITION COMPRISING THE SAME AND AN OPTICAL FILM AND AN IPS MODE LIQUID CRYSTAL DISPLAY DEVICE COMPRISING THE SAME - Provided is an acrylic copolymer comprising; an alkyl (meth)acrylate monomer; a monomer comprising a cyclic pendant structure; and a tert-butyl (meth)acrylate monomer and/or (meth)acrylamide monomer. Also provided is a resin composition comprising the same and an optical film and an IPS mode liquid crystal display device using the same. | 06-13-2013 |
20130314785 | RESIN COMPOSITION AND OPTICAL FILM FORMED BY USING THE SAME - Provided are a resin composition and an optical film formed by using the same, and more particularly, a resin composition including 85 to 95 parts by weight of a matrix copolymer resin including an alkyl(meth)acrylate-based unit, an acryl-based unit containing a benzene ring, and a (meth)acrylic acid unit, and 5 to 15 parts by weight of a polymer resin having a molecular weight range of 150,000 to 1,000,000 and an optical film formed by using the composition. A resin composition according to the present invention may provide a protective film for a polarizing plate having excellent heat resistance and toughness as well as excellent optical properties, and thus, an optical film formed by using the resin composition of the present invention may be used in information electronic devices such as display devices for various applications. | 11-28-2013 |
20140000801 | METHOD OF PREPARING RESIN COMPOSITION FOR OPTICAL FILM BY USING CONTINUOUS BULK POLYMERIZATION AND METHODS OF PREPARING OPTICAL FILM AND POLARIZING PLATE USING THE RESIN COMPOSITION | 01-02-2014 |
20140036363 | RESIN COMPOSITION FOR OPTICAL FILM AND OPTICAL FILM USING THE SAME - Provided are a resin composition for an optical film including an alkyl(meth)acrylate unit, a benzyl(meth)acrylate unit, a (meth)acrylic acid unit, and a unit expressed by Chemical Formula I, an optical film, a polarizing plate, and an image display device using the resin composition. | 02-06-2014 |
20140046016 | RESIN COMPOSITION FOR OPTICAL FILM AND OPTICAL FILM USING THE SAME - The present invention relates to a resin composition for an optical film comprising a copolymer which includes an alkyl (meth)acrylate unit, a (meth)acrylate unit having a benzene ring, and a (meth)acrylic acid unit, wherein a content of a residual monomer is less than 2000 ppm in the resin composition and an optical film using the same. | 02-13-2014 |
20140092473 | ACRYLIC RESIN COMPOSITION, AND OPTICAL FILM COMPRISING SAME - The present invention relates to an acrylic copolymer resin containing: 1) an alkyl (meth)acrylate-based monomer; 2) a (meth)acrylate-based monomer containing an aliphatic ring and/or an aromatic ring; and 3) at least an imide-based monomer or a styrene-based monomer, to a resin composition containing said acrylic copolymer resin and a resin containing an aromatic ring and/or an aliphatic ring in the main chain thereof, to an optical film comprising said resin composition, and to a liquid crystal display device comprising said optical film. The optical film according to the present invention has excellent heat resistance, optical transparency, etc. | 04-03-2014 |
Patent application number | Description | Published |
20100007271 | Organic light emitting diode display apparatus and method of manufacturing the same - An organic light emitting diode (OLED) display apparatus, including a substrate, at least one thin film transistor (TFT) on the substrate, an insulating layer covering the at least one TFT and having a via hole and a groove, a first electrode on the insulating layer and electrically connected to the at least one TFT through the via hole, a pixel define layer on the first electrode and the groove, the pixel define layer having an opening that exposes the first electrode; an intermediate layer electrically connected to the first electrode through the opening, the intermediate layer including an organic emissive layer, and a second electrode on the intermediate layer. The organic emissive layer may be easily formed in the opening because a step between the organic emissive layer and the pixel define layer may be reduced as a portion of pixel define layer fills the groove. | 01-14-2010 |
20100224883 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 09-09-2010 |
20110068337 | Display and method for manufacturing the same - A display includes a substrate main body, a thin film transistor (TFT) on the substrate main body, the TFT including an oxide semiconductor layer and a metal oxide film sequentially stacked on top of each other. | 03-24-2011 |
20120001182 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device that may be easily manufactured and has an excellent display quality, the organic light-emitting display device including: an active layer of a thin-film transistor (TFT) formed on a substrate and including a semiconductor material; a lower electrode of a capacitor formed on the substrate and including a semiconductor material in which impurity ions are doped; a first insulating layer formed on the substrate so as to cover the active layer and the lower electrode; a gate electrode of the TFT formed on the first insulating layer and including a first gate electrode including silver (Ag) or an Ag alloy, a second gate electrode including a transparent conductive material, and a third gate electrode including metal that are sequentially stacked in the order stated; a plurality of pixel electrodes formed on the first insulating layer and including a first pixel electrode including Ag or an Ag alloy and a second pixel electrode including a transparent conductive material that are sequentially stacked in the order stated; an upper electrode of the capacitor formed on the first insulating layer and including a first upper electrode including Ag or an Ag alloy and a second upper electrode including a transparent conductive material that are sequentially stacked in the order stated; source and drain electrodes of the TFT electrically connected to the active layer; an organic layer disposed on the pixel electrode and including an organic emission layer; and an opposite electrode disposed facing each of the pixel electrodes while the organic layer is interposed between the opposite electrode and each of the pixel electrodes, and a method of manufacturing the organic light-emitting display device. | 01-05-2012 |
20120001185 | Organic Light Emitting Diode Display and Manufacturing Method Thereof - An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode. | 01-05-2012 |
20120104397 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a thin-film transistor (TFT), which includes an active layer, a gate electrode, and source/drain electrodes; an organic electroluminescent device electrically connected to the TFT and includes a pixel electrode formed on the same layer as the gate electrode, an intermediate layer including an organic light emitting layer, and a counter electrode that are stacked in the order stated; and a capacitor, which includes a bottom electrode, which is formed on the same layer and of the same material as the active layer and is doped with an impurity; a top electrode formed on the same layer as the gate electrode; and a metal diffusion medium layer formed on the same layer as the source/drain electrodes and is connected to the bottom electrode. | 05-03-2012 |
20120138937 | Light-Scattering Substrate, Method of Manufacturing the Same, Organic Light-Emitting Display Device Including the Same, and Method of Manufacturing the Organic Light-Emitting Display Device - A light-scattering substrate which can be thinned and has improved thermal resistance, a method of manufacturing the same, an organic light-emitting display device including the same, and a method of manufacturing the organic light-emitting display device are disclosed. The light-scattering substrate includes a light-scattering layer composed of a plurality of metal nanoparticles which are attached to at least a surface of a substrate. The metal nanoparticles are formed by agglomeration of a metal on the substrate, and show a surface plasmon phenomenon. | 06-07-2012 |
20130009542 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate; a first electrode on the substrate; a particle unit including a plurality of particles that are separate from each other on a top surface of the first electrode; an intermediate layer on the first electrode and the particle unit and including an organic emission layer; and a second electrode on the intermediate layer. | 01-10-2013 |
20130112976 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin-film transistor array substrate is disclosed. In one embodiment, the substrate includes: i) a thin-film transistor including an active layer, and gate, source and drain electrodes, ii) a lower electrode of a capacitor, iii) an upper electrode of the capacitor formed on the lower electrode iv) a first insulation layer between the lower and upper electrodes, and between the active layer and the gate electrode, and having a gap outside the lower electrode. The substrate may further include i) a second insulation layer formed on the first insulation layer and having the same etching surface as the first insulation layer in the gap, ii) a bridge formed of the same material as the source and drain electrodes, and filling a part of the gap and iii) a third insulation layer covering the source and drain electrodes and exposing a pixel electrode. | 05-09-2013 |
20130146877 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus including: a substrate; a first electrode on the substrate; a second electrode on the first electrode; an intermediate layer between the first electrode and the second electrode, the intermediate layer being electrically connected with the first electrode and the second electrode, and including an organic emission layer; and a light reflection member overlapping a portion of the intermediate layer, the portion of the intermediate layer being less than an entire region of the intermediate layer. | 06-13-2013 |
20130153915 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate including a plurality of red, green, and blue sub-pixel regions, a pixel electrode in each of the plurality of the red, green, and blue sub-pixel regions on the substrate, a Distributed Bragg Reflector (DBR) layer between the substrate and the pixel electrodes, a high-refractive index layer between the substrate and the DBR layer in the blue sub-pixel region, the high-refractive index layer having a smaller area than an area of a corresponding pixel electrode in the blue sub-pixel region, an intermediate layer including an emissive layer on the pixel electrode, and an opposite electrode on the intermediate layer. | 06-20-2013 |
20140048829 | LIGHT BLOCKING MEMBER AND DISPLAY PANEL INCLUDING THE SAME - A light blocking member including a metal particle and a ceramic material and a display device including the same. | 02-20-2014 |
20140084264 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, a source electrode, a drain electrode, a first gate insulating layer and a second gate insulating layer formed between the active layer and the gate electrode, and an interlayer insulating layer formed between the gate electrode and the source electrode and the drain electrode; a pixel electrode formed in an opening of the interlayer insulating layer, the pixel electrode including transparent conductive oxide; a translucent electrode formed in a region corresponding to the pixel electrode, between the first gate insulating layer and the second gate insulating layer; and a capacitor including a lower electrode formed from the same layer as the active layer, and an upper electrode formed from the same layer as the translucent electrode. | 03-27-2014 |
20140363936 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode. | 12-11-2014 |
20150064826 | LIGHT-SCATTERING SUBSTRATE, METHOD OF MANUFACTURING THE SAME, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A light-scattering substrate which can be thinned and has improved thermal resistance, a method of manufacturing the same, an organic light-emitting display device including the same, and a method of manufacturing the organic light-emitting display device are disclosed. The light-scattering substrate includes a light-scattering layer composed of a plurality of metal nanoparticles which are attached to at least a surface of a substrate. The metal nanoparticles are formed by agglomeration of a metal on the substrate, and show a surface plasmon phenomenon. | 03-05-2015 |
20150064858 | METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate including a plurality of red, green, and blue sub-pixel regions, a pixel electrode in each of the plurality of the red, green, and blue sub-pixel regions on the substrate, a Distributed Bragg Reflector (DBR) layer between the substrate and the pixel electrodes, a high-refractive index layer between the substrate and the DBR layer in the blue sub-pixel region, the high-refractive index layer having a smaller area than an area of a corresponding pixel electrode in the blue sub-pixel region, an intermediate layer including an emissive layer on the pixel electrode, and an opposite electrode on the intermediate layer. | 03-05-2015 |
Patent application number | Description | Published |
20080251785 | Display device and method of fabricating the same - A display device includes a thin film transistor (TFT) on a substrate, the TFT including source/drain electrodes, a cover layer on the source/drain electrodes, and a light source including at least one electrode, the electrode being electrically connected to the source/drain electrodes of the TFT through the cover layer, wherein the cover layer includes a same material as the electrode of the light source. | 10-16-2008 |
20090121231 | THIN FILM TRANSISTORS, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DIODE DEVICE USING THE SAME - Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process. | 05-14-2009 |
20090137074 | Method of manufacturing display device - A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer. | 05-28-2009 |
20120064676 | METHOD OF FABRICATING THIN FILM TRANSISTOR - A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer. | 03-15-2012 |
20130149819 | THIN FILM TRANSISTORS, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT-EMITTING DIODE DEVICE USING THE SAME - Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process. | 06-13-2013 |
Patent application number | Description | Published |
20080273520 | NETWORK ARCHITECTURE FOR DYNAMICALLY SETTING END-TO-END QUALITY OF SERVICE (QoS) IN A BROADBAND WIRELESS COMMUNICATION SYSTEM - A communication network architecture including a broadband radio access network is provided. The architecture includes a terminal for transmitting an application layer service request message to request a service, a Policy Charging Rule Function (PCRF) for generating Quality of Service (QoS) parameters of an Internet Protocol (IP) layer using QoS parameters of an application layer contained in the application layer service request message, a first Policy Decision Function (PDF) for generating one or more QoS parameters of the IP layer in addition to the IP layer QoS parameters generated at the PCRF and a second PDF for generating a QoS parameter set of a radio access network using the IP layer QoS parameters generated at the PCRF and the one or more IP layer QoS parameters generated at the first PDF. The communication network guarantees an end-to-end QoS. | 11-06-2008 |
20130029670 | METHOD AND APPARATUS FOR SUPPORTING A HANDOVER IN A BROADBAND WIRELESS ACCESS COMMUNICATION SYSTEM - The present invention relates to a broadband wireless access communication system, and particularly, to a method for supporting a handover in a broadband wireless access communication system. A method for performing a handover in a broadband wireless access communication system according to one embodiment of the present invention comprises: a step in which a macro base station consists of mapping information using base station IDs (BS-IDs) used by a plurality of femto base stations and transmission-related information, and transmits the mapping information to the plurality of femto base stations; and a step in which the macro base station performs, using the mapping information, a handover in which one of the plurality of femto base stations is set as a target base station, upon receipt of a handover request from a terminal. | 01-31-2013 |
20130034923 | ETCHING COMPOSITION, METHOD OF FORMING A METAL PATTERN USING THE ETCHING COMPOSITION, AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE - An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate. | 02-07-2013 |
20130115733 | ETCHANT COMPOSITION AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING THE SAME - Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH | 05-09-2013 |
20140038348 | ETCHANT COMPOSITION AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR USING THE SAME - An etchant composition includes ammonium persulfate (((NH | 02-06-2014 |