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Dae-Won Kim

Dae-Won Kim, Goyang KR

Patent application numberDescriptionPublished
20100301327DISPLAY DEVICE HAVING OXIDE THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide semiconductor layer of a pixel area is etched by using a half-tone mask, a metal layer is formed at a contact hole of the etched gate insulting layer, and then a passivation layer formed thereon is etched. Thus, an overhang of the passivation layer can be prevented from being generated when the gate insulating layer is etched, and accordingly, the fabrication process can be simplified.12-02-2010

Dae-Won Kim, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100304528METHOD OF FABRICATING OXIDE THIN FILM TRANSISTOR - According to a method of fabricating an oxide thin-film transistor, when a thin-film transistor is fabricated by using an amorphous zinc oxide (ZnO)-based semiconductor as an active layer, it may be possible to reduce a tact time as well as attain an enhanced element characteristic by depositing an insulation layer having an oxide characteristic in-situ through controlling oxygen (O12-02-2010

Patent applications by Dae-Won Kim, Gyeonggi-Do KR

Dae-Won Kim, Yongin-Si KR

Patent application numberDescriptionPublished
20090120494SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell having a high photoelectric efficiency by minimizing (or reducing) electron transfer resistance and electrode shading loss. The solar cell includes a semiconductor substrate; an emitter layer on a first side of the semiconductor substrate; a conductive transparent electrode layer on the emitter layer; a first electrode on the conductive transparent electrode layer and electrically connected to the conductive transparent electrode layer; and a second electrode on a second side of the semiconductor substrate and electrically connected to the semiconductor substrate. The conductive transparent electrode layer has a specific resistance of about 500 μΩ·cm or less. The emitter layer may be doped with a low concentration of impurities resulting in improve optical response at a short wavelength and minimization (or reduction) of recombination loss.05-14-2009

Dae-Won Kim, Suwon-Si KR

Patent application numberDescriptionPublished
20090173379SOLAR CELL HAVING IMPROVED ELECTRODE STRUCTURE - A solar cell having an improved electrode structure includes a semiconductor substrate of a first conductive type, a first electrode, an emitter portion of a second conductive type, and a second electrode. The semiconductor substrate has first and second surfaces opposite to each other. The first electrode is electrically connected to the first surface of the semiconductor substrate. The emitter portion is formed adjacent to the second surface of the semiconductor substrate. The second electrode is electrically connected to the emitter portion. The first electrode includes a first electrode portion partially formed on the first surface of the semiconductor substrate and a second electrode portion formed on the first surface of the semiconductor substrate to cover the first electrode portion.07-09-2009
20090188550SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solar cell having an improved process and a solar cell manufactured by the method include a semiconductor substrate having a via hole, an emitter portion, a base portion, a first electrode, and a second electrode. The emitter portion and the base portion form a p-n junction in the semiconductor substrate. The first electrode is electrically connected to the emitter portion, and the second electrode is electrically connected to the base portion. Conductive crystals are formed to electrically connect a first electrode portion of the first electrode and the emitter portion to increase the efficiency of the solar cell.07-30-2009
20090211640Electron injecting layer including superacid salt, lithium salt or mixture thereof, photovoltaic device including the electron injecting layer, method of manufacturing the photovoltaic device, and organic light-emitting device including the electron injecting layer - Provided are an electron injecting layer formed by spin-coating a solution of a superacid salt, a lithium salt or a mixture thereof dissolved in a solvent, a photovoltaic device including the same, a method of manufacturing the photovoltaic device, and an organic light-emitting device including the electron injecting layer.08-27-2009

Patent applications by Dae-Won Kim, Suwon-Si KR

Dae-Won Kim, Osan-Si KR

Patent application numberDescriptionPublished
20080280830FUSION PROTEIN COMPRISING FK506 BINDING PROTEIN AND METHOD OF MAKING AND USING THE SAME - Disclosed is a fusion protein containing a FK506 binding protein and a cell-transducing domain. Also, disclosed is a method of making the fusion protein and use of the fusion protein in a pharmaceutical or cosmetic composition. The cell-transducing domain is, for example, a PEP-1.11-13-2008