Patent application number | Description | Published |
20140209940 | LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS - Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer. | 07-31-2014 |
20140209962 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. | 07-31-2014 |
20140209966 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. | 07-31-2014 |
20140240975 | LIGHT EMITTING DEVICE - A light emitting device includes a first light emitting diode chip comprising a red wavelength, a second light emitting diode chip comprising a different red wavelength from the wavelength of the first light emitting diode chip, and a plurality of third light emitting diode chips disposed around the first and second light emitting diode chips. The light emitting device emits light in a wavelength region similar to that of solar light, thereby improving color rendition. | 08-28-2014 |
20140319553 | LIGHT EMITTING DEVICE FOR HIGH CURRENT OPERATION - Disclosed is a light-emitting element for high-current drive. The light-emitting element comprises: a light-emitting diode chip which emits ultraviolet light; and a wavelength conversion layer which converts the wavelength of the ultraviolet light emitted from the light-emitting diode chip into visible light. The light-emitting diode chip is driven at a current density of at least 150 A/cm | 10-30-2014 |
20140328056 | AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME - An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor. | 11-06-2014 |
20140334148 | BACKLIGHT MODULE, METHOD FOR DRIVING SAME AND DISPLAY DEVICE USING SAME - An LED lighting apparatus is provided. The LED lighting apparatus comprises: an LED module; a heat dissipation member; and a connection member for connecting the LED module and the heat dissipation member mechanically and heat-conductively. The heat dissipation member comprises a reflective surface for reflecting light from the LED module. | 11-13-2014 |
20140339566 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate. | 11-20-2014 |
20140353582 | HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved. | 12-04-2014 |
20140353679 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency. | 12-04-2014 |
20140353708 | WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump. | 12-04-2014 |
20140361327 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided. | 12-11-2014 |