| Patent application number | Description | Published |
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| 20090309101 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio. | 12-17-2009 |
| 20110012115 | DISPLAY DEVICE WITH IMPROVED SENSING MECHANISM - A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced. | 01-20-2011 |
| 20110018815 | TOUCH SCREEN PANEL AND METHOD OF MANUFACTURING THE SAME - Provided are a touch screen panel and a method of manufacturing the same. The touch screen panel comprises: a substrate; a first reflection-preventing film formed on the substrate; a first gate wiring formed on the first reflection-preventing film; and a sensing wiring formed above the first gate wiring to be insulated from the first gate wiring and to cross the first gate wiring. | 01-27-2011 |
| 20110032461 | VISIBLE-LIGHT BLOCKING MEMBER, INFRARED SENSOR INCLUDING THE VISIBLE-LIGHT BLOCKING MEMBER, AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE INFRARED SENSOR - In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor. | 02-10-2011 |
| 20110057189 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode. | 03-10-2011 |
| 20110095300 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film. | 04-28-2011 |
| 20110147746 | TOUCH SCREEN SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL INCLUDING THE TOUCH SCREEN SUBSTRATE - A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode. | 06-23-2011 |
