Patent application number | Description | Published |
20090309101 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio. | 12-17-2009 |
20110012115 | DISPLAY DEVICE WITH IMPROVED SENSING MECHANISM - A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced. | 01-20-2011 |
20110018815 | TOUCH SCREEN PANEL AND METHOD OF MANUFACTURING THE SAME - Provided are a touch screen panel and a method of manufacturing the same. The touch screen panel comprises: a substrate; a first reflection-preventing film formed on the substrate; a first gate wiring formed on the first reflection-preventing film; and a sensing wiring formed above the first gate wiring to be insulated from the first gate wiring and to cross the first gate wiring. | 01-27-2011 |
20110032461 | VISIBLE-LIGHT BLOCKING MEMBER, INFRARED SENSOR INCLUDING THE VISIBLE-LIGHT BLOCKING MEMBER, AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE INFRARED SENSOR - In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor. | 02-10-2011 |
20110057189 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode. | 03-10-2011 |
20110095300 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film. | 04-28-2011 |
20110147746 | TOUCH SCREEN SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL INCLUDING THE TOUCH SCREEN SUBSTRATE - A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode. | 06-23-2011 |
20120037912 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 02-16-2012 |
20130234142 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 09-12-2013 |
20140218644 | VISIBLE SENSING TRANSISTOR, DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent. | 08-07-2014 |
20150177862 | TOUCH SCREEN PANEL AND METHOD OF MANUFACTURING THE SAME - Provided are a touch screen panel and a method of manufacturing the same. The touch screen panel comprises: a substrate; a first reflection-preventing film formed on the substrate; a first gate wiring formed on the first reflection-preventing film; and a sensing wiring formed above the first gate wiring to be insulated from the first gate wiring and to cross the first gate wiring. | 06-25-2015 |
Patent application number | Description | Published |
20110090420 | SENSOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor. | 04-21-2011 |
20110261040 | INFORMATION DETECTION DISPLAY - An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage. | 10-27-2011 |
20120025189 | SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other. | 02-02-2012 |
20120138929 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 06-07-2012 |
20120188204 | TOUCH SENSING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes. | 07-26-2012 |
20120228505 | OPTICAL SENSOR - An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line. | 09-13-2012 |
20120248452 | OPTICAL SENSOR - An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer. | 10-04-2012 |
20140184942 | DISPLAY HAVING TOUCH SENSING FUNCTION - A panel for a display device is provided. The panel includes a first substrate, a touch sensing circuit formed on the first substrate, the touch sensing circuit including at least one sensing thin film transistor and a connection wire, and a shielding electrode formed covering at least a portion of the sensing thin film transistor and the connection wire. | 07-03-2014 |
20140211103 | DISPLAY DEVICE - Touch-related information which cannot be acquired by the naked eye (dubbed here as sub-optical pattern information) has its corresponding sub-optical patterns respectively positioned within the aperture areas of respective domains such that the displayed image, as viewed from different viewing angles is not adversely affected by the embedded sub-optical patterns. One type of touch-related information which can be conveyed is that of touch location of a sub-optical pattern sensing pen positioned over one or more of the sub-optical patterns. | 07-31-2014 |
20140232972 | DISPLAY SUBSTRATE, DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a base substrate, a reflection controlling layer disposed on the base substrate, and a metal wiring layer disposed on the reflection controlling layer. The metal wiring layer comprises an opaque metal. The reflection controlling layer changes wavelength-specific reflectance of reflected light using destructive interference. The reflected light is reflected from the metal wiring layer through the base substrate and the reflection controlling layer. | 08-21-2014 |
20140247403 | TOUCH DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A touch display apparatus includes a base substrate, a light blocking semiconductor pattern disposed on the base substrate and configured to block a visible light and transmit an infrared light, a sensing element disposed on the light blocking semiconductor pattern and configured to detect a touch position using an incident infrared light, a driving element configured to drive the sensing element, a signal line electrically connected with the sensing element or the driving element and extending in a direction, and a wiring connecting part disposed under the signal line and including a same material as the light blocking semiconductor pattern. | 09-04-2014 |
20140287542 | IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME - An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer. | 09-25-2014 |
20140306901 | METHOD OF PROCESSING TOUCH-SENSOR DATA AND APPARATUS FOR PERFORMING THE SAME - A method of processing touch-image data includes calculating a plurality of motion vectors using a plurality of low-resolution touch-image data frames, aligning sensing data corresponding to an object detected in the low-resolution touch-image data frames using the motion vectors to generate an overlapped touch-image data frame, generating high-resolution data corresponding to the detected object using the overlapped touch-image data frame and detecting the touch position and generating touch position data of the detected object using the high-resolution touch position data corresponding to the detected object. | 10-16-2014 |