Da-Woon

Da-Woon Han, Yongin-Si KR

Patent application number	Description	Published
20110274979	NEGATIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, METHOD OF PREPARING SAME, AND RECHARGEABLE LITHIUM BATTERY - A negative active material for a rechargeable lithium battery, a method of manufacturing the same, and a rechargeable lithium battery including the negative active material. The negative active material includes carbon particles having interplanar spacing (d002) ranging from about 0.34 nm to about 0.50 nm at a 002 plane, measured by X-ray diffraction using CuKα, and nitrogen on the surface of the carbon particles.	11-10-2011
20110294014	NEGATIVE ELECTRODE FOR SECONDARY LITHIUM BATTERY, AND SECONDARY LITHIUM BATTERY - Disclosed is a negative electrode for a secondary lithium battery and a secondary lithium battery including the same, wherein the negative electrode includes a current collector and a negative active material layer formed on the current collector, and the negative active material layer includes an additive including a core including a metal oxide and a metal coating layer formed on the core, and a negative active material.	12-01-2011

Patent application number	Description	Published
20110104741	Screening Method for Inhibitors of Cancer Cell Invasion and Screening System Thereof - This invention relates to a screening method for an inhibitor to cancer cell invasion, comprising the steps of: (a) co-culturing cancer cells and a carcinoma-associated fibroblasts (CAFs) in a multi-chamber containing a upper-chamber, a lower-chamber and a porous filter separating the upper-chamber from the lower-chamber; in which each cancer cells and CAFs is inoculated into the upper-chamber and the lower-chamber of the multi-chamber, and then a candidate is added to the upper-chamber; and (b) measuring the number of cancer cells passing the porous filter. According to the screening system and screening method using the same, the inhibitor to cancer cell invasion is able to be screened in a high-throughput manner.	05-05-2011

Patent application number	Description	Published
20110303931	SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - Disclosed are a semiconductor light emitting diode and a method for fabricating the same. The method comprises forming a crystalline nitride semiconductor layer on a substrate, forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semiconductor layer, forming an n-type nitride semiconductor layer on the crystalline nitride semiconductor layer, forming an active layer on the n-type nitride semiconductor layer, and forming a p-type nitride semiconductor layer on the active layer.	12-15-2011