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Currie, MA
Mark Currie, Sterling, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20100179235 | COMPOSITIONS COMPRISING BILE ACID SEQUESTRANTS FOR TREATING ESOPHAGEAL DISORDERS - Disclosed herein are novel compositions for treating or preventing upper GI tract disorders and protecting stratified squamous epithelium against injury by a noxious substance. The pharmaceutical composition comprises at least one bile acid sequestrant, alone or in combination with at least one proton pump inhibitor, and optionally one or more agent chosen from antacids, histamine H2-receptor antagonists, -aminobutyricacid-b (GABA-B) agonists, prodrugs of GABA-B agonists, and protease inhibitors. | 07-15-2010 |
| 20110021419 | Methods and Compositions for the Treatment of Heart Failure and Other Disorders - Peptides that act as GC-C receptor agonists and contain at least one D-cys and are useful for the treatment of diuresis and heart disease as well as other disorders are described. | 01-27-2011 |
Matthew Currie, Brookline, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20110012172 | Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods - Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein. | 01-20-2011 |
| 20110095363 | Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same - Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced. | 04-28-2011 |
| 20110121362 | RF Circuits Including Transistors Having Strained Material Layers - Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance. | 05-26-2011 |
Matthew T. Currie, Brookline, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20080265299 | Strained channel dynamic random access memory devices - DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined. | 10-30-2008 |
| 20110049568 | Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication - Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures. | 03-03-2011 |
| 20110073908 | III-V Semiconductor Device Structures - The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. | 03-31-2011 |
Matthew T. Currie, Brokline, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20080265280 | HYBRID FIN FIELD-EFFECT TRANSISTOR STRUCTURES AND RELATED METHODS - Abstract Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or crystalline oxide. | 10-30-2008 |
Michael Currie, Groton, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090235974 | SOLAR CONCENTRATOR AND DEVICES AND METHODS USING THEM - Solar concentrators are disclosed that improve the efficiency of PV cells and systems using them. The solar concentrators may be designed such that they include one or more chromophores that emit light to a PV cell. Various materials and components of the solar concentrators are also described. | 09-24-2009 |
| 20100193011 | MATERIALS FOR SOLAR CONCENTRATORS AND DEVICES, METHODS AND SYSTEM USING THEM - Solar concentrators are disclosed that improve the efficiency of PV cells and systems using them. The solar concentrators may be designed such that they include one or more chromophore assemblies, anti-Stokes materials or other suitable materials that emit light to a PV cell. Various materials and components of the solar concentrators are also described. | 08-05-2010 |