Patent application number | Description | Published |
20160086497 | LANDING SITE TRACKER - A landing site tracker of an aircraft, including a track filter configured to process feature data representing the location of features of a candidate landing site, initialize and maintain tracks of the features as a track of the candidate site, compare geometry constraints for a landing site with the track to validate the candidate site as the landing site, and convert the track into navigation data, representing the position of the landing site, for a navigation system of the aircraft. | 03-24-2016 |
20160093225 | LANDING SYSTEM FOR AN AIRCRAFT - A landing system of an aircraft, including: a site selector to select a candidate site using geographical reference point data for the site and current navigation data for the aircraft; a path generator to generate (a) a survey route within the vicinity of said candidate site using said geographical reference point data for the site, and (b) a route to said survey route and; a camera system to obtain images of the candidate site when said aircraft flys said survey route; a site detector controller to process the images to confirm the site by determining the images are of at least part of the candidate site; a tracker to track the site, once confirmed, relative to the aircraft based on the images to verify, and provide navigation data on, the candidate site; and a navigation and guidance system to land the aircraft on the site once the candidate site is verified using the navigation data. | 03-31-2016 |
Patent application number | Description | Published |
20120287957 | BROAD AREA DIODE LASER WITH HIGH EFFICIENCY AND SMALL FAR-FIELD DIVERGENCE - The present invention relates to a broad area laser with high efficiency and small far-field divergence, as well as high output power. | 11-15-2012 |
20130128911 | DIODE LASER AND METHOD FOR MANUFACTURING A HIGH-EFFICIENCY DIODE LASER - A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step. | 05-23-2013 |
20130208748 | LASER DIODE WITH HIGH EFFICIENCY - It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time. | 08-15-2013 |
20130287057 | HIGH-EFFICIENCY DIODE LASER - A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 μm and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01. | 10-31-2013 |