Patent application number | Description | Published |
20100024841 | Ion Source and a Method for In-Situ Cleaning Thereof - An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature. | 02-04-2010 |
20100327159 | Ion Source Cleaning End Point Detection - In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning. | 12-30-2010 |
20110143527 | TECHNIQUES FOR GENERATING UNIFORM ION BEAM - Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion implanter comprising an ion source. The method may comprise: introducing dopant into an ion source chamber of the ion source, the dopant may comprise molecules containing boron and hydrogen; introducing diluent into the ion source chamber, the diluent containing halogen; ionizing the dopant and the diluent into molecular ions and halogen containing ions, the molecular ions containing boron and hydrogen; extracting the molecular ions and the halogen containing ions from the ions source chamber; and directing the molecular ions toward the substrate, where the halogen containing ions may improve uniformity of the molecular ions extracted from the ion source and extend the lifetime of the ion source. | 06-16-2011 |
20110220144 | CLEANING OF AN EXTRACTION APERTURE OF AN ION SOURCE - An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper. The wiper is positioned within the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A cleaning sub-assembly for an ion source includes a wiper configured to be positioned within an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source. | 09-15-2011 |
20110220812 | CLEANING OF AN EXTRACTION APERTURE OF AN ION SOURCE - An ion source includes an arc chamber housing defining an arc chamber having an extraction aperture, and a wiper assembly comprising a wiper positioned outside the arc chamber in a parked position and configured to be driven from the parked position to operational positions to clean the extraction aperture. A wiper assembly for an ion source includes a wiper configured to be positioned outside an arc chamber of the ion source when in a parked position and driven from the parked position to operational positions to clean an extraction aperture of the ion source. | 09-15-2011 |
20120256097 | INDIRECTLY HEATED CATHODE CARTRIDGE DESIGN - An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer. | 10-11-2012 |
20130072008 | TECHNIQUE FOR ION IMPLANTING A TARGET - A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant. | 03-21-2013 |
20130075253 | TITANIUM DIBORIDE COATING FOR PLASMA PROCESSING APPARATUS - An improved plasma processing chamber is disclosed, wherein some or all of the components which are exposed to the plasma are made of, or coated with, titanium diborane. Titanium diborane has a hardness in excess of 9 mhos, making it less susceptible to sputtering. In addition, titanium diborane is resistant to fluoride and chlorine ions. Finally, titanium diborane is electrically conductive, and therefore the plasma remains more uniform over time, as charge does not build on the surfaces of the titanium diborane components. This results in improved workpiece processing, with less contaminants and greater uniformity. In other embodiments, titanium diborane may be used to line components within a beam line implanter. | 03-28-2013 |
20130313443 | EXCITED GAS INJECTION FOR ION IMPLANT CONTROL - An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber. | 11-28-2013 |
20130313971 | Gallium ION Source and Materials Therefore - In one embodiment, a method for generating an ion beam having gallium ions includes providing at least a portion of a gallium compound target in a plasma chamber, the gallium compound target comprising gallium and at least one additional element. The method also includes initiating a plasma in the plasma chamber using at least one gaseous species and providing a source of gaseous etchant species to react with the gallium compound target to form a volatile gallium species. | 11-28-2013 |
20140070697 | Internal RF Antenna With Dielectric Insulation - Disclosed is a radio frequency (RF) antenna for plasma ion sources. The RF antenna includes a low-resistance metal tube having an inner and outer diameter. A low friction polymer tube also having an inner and outer diameter surrounds the low-resistance metal tube. The inner diameter of the polymer tube is slightly larger than the outer diameter of the low-resistance metal tube. A pre-formed quartz glass tube encases the low friction polymer tube and low-resistance metal tube. The quartz glass tube is pre-formed in a desired shape. A guide wire is attached inside one end of the low-resistance hollow metal tube. The flexible low friction polymer tube containing the low-resistance metal tubed may then be threaded through the quartz glass tube. | 03-13-2014 |
20140102563 | Gas Transport Across a High Voltage Potential - Disclosed are techniques to reduce the effects of Paschen events from occurring within a gas transport system. A passive isolation assembly may be used to bridge a gas being transported from a low potential environment to a high potential environment. The passive isolation assembly may include a non-conductive axially bored transport insulator. An irregularly shaped non-conductive isolation tracking insulator may be in direct contact with and surrounding the transport insulator. The passive isolation assembly may also include an electrically conductive front end sealing cap at earth ground potential that has an opening that is adapted to couple with a source gas transport line and an electrically conductive rear end sealing cap at a high voltage potential that has an opening adapted to couple with a destination gas transport line. | 04-17-2014 |
20140352617 | Coating Insulating Materials For Improved Life - A system for extending the life of insulating components disposed within a housing, such as an ion implanter, is disclosed. The system includes one or more insulating components, disposed in the housing, which are coated with a diamond like carbon (DLC) coating. The insulating components may be bushings or any insulating component used to electrically isolate two components having different voltage potentials, such as electrodes. This DLC coating retards the deposition of metals, such as those contained in the ion source, on the insulating components. This reduces the likelihood or electrical arcing or other phenomenon that affect the useful life of these insulating component. | 12-04-2014 |