| Patent application number | Description | Published |
|---|
| 20080311717 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications - An insulated-gate field-effect transistor ( | 12-18-2008 |
| 20100244106 | Fabrication and structure of asymmetric field-effect transistors using L-shaped spacers - Fabrication of an asymmetric field-effect transistor ( | 09-30-2010 |
| 20100244128 | Configuration and fabrication of semiconductor structure using empty and filled wells - A semiconductor structure, which serves as the core of a semiconductor fabrication platform, has a combination of empty-well regions and filled-well regions variously used by electronic elements, particularly insulated-gate field-effect transistors (“IGFETs”), to achieve desired electronic characteristics. A relatively small amount of semiconductor well dopant is near the top of an empty well. A considerable amount of semiconductor well dopant is near the top of a filled well. Some IGFETs ( | 09-30-2010 |
| 20100244130 | Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket - Insulated-gate field-effect transistors (“IGFETs”), both symmetric and asymmetric, suitable for a semiconductor fabrication platform that provides IGFETs for analog and digital applications, including mixed-signal applications, utilize empty-well regions in achieving high performance. A relatively small amount of semiconductor well dopant is near the top of each empty well. Each IGFET ( | 09-30-2010 |
| 20100244131 | Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions - An asymmetric insulated-gate field-effect transistor ( | 09-30-2010 |
| 20100244143 | Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length - A semiconductor structure contains a bipolar transistor ( | 09-30-2010 |
| 20100244147 | Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portions along source/drain zone - An asymmetric insulated-gate field effect transistor ( | 09-30-2010 |
| 20100244149 | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses - A group of high-performance like-polarity insulated-gate field-effect transistors ( | 09-30-2010 |
| 20100244150 | Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants - An insulated-gate field-effect transistor ( | 09-30-2010 |
| 20100244151 | Structure and fabrication of field-effect transistor having source/drain extension defined by multiple local concentration maxima - An insulated-gate field-effect transistor ( | 09-30-2010 |
| 20100244152 | Configuration and fabrication of semiconductor structure having extended-drain field-effect transistor - An extended-drain insulated-gate field-effect transistor (104 or 106) contains first and second source/drain zones 324 and 184B or 364 and 186B) laterally separated by a channel (322 or 362) zone constituted by part of a first well region (184A or 186A). A gate dielectric layer (344 or 384) overlies the channel zone. A gate electrode (346 or 386) overlies the gate dielectric layer above the channel zone. The first source/drain zone is normally the source. The second S/D zone, normally the drain, is constituted with a second well region (184B or 186B). A well-separating portion 186A or 186B/212U) of the semiconductor body extends between the well regions and is more lightly doped than each well region. The configuration of the well regions cause the maximum electric field in the IGFET's portion of the semiconductor body to occur well below the upper semiconductor surface, typically at or close to where the well regions are closest to each other. The IGFET's operating characteristics are stable with operational time. | 09-30-2010 |
