| Patent application number | Description | Published |
|---|
| 20090250689 | Nanowire - A method comprises applying a first electric field pulse to a nanowire comprising a channel and a charge trapping region configured to control conductivity of the channel, the first electric field pulse having a first polarity and a relatively large magnitude of integral of electric field during the pulse and, thereafter, applying at least one further electric field pulse to the nanowire, each further electric pulse having a second, opposite polarity and each respective further electric field pulse having a relatively small magnitude of integral of electric field during the pulse. | 10-08-2009 |
| 20100025658 | Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process - The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a multi-layer substrate, and removing areas of the upper layer not covered by the mask in a nanowire lithography process. The mask includes two conductive terminals separated by a distance, and a nanowire in contact with the conductive terminals across the distance. The nanowire lithography may be carried out using a deep-reactive-ion-etching, which results in an integration of the nanowire mask and the underlying semiconductor layer to form a nanoscale semiconductor channel for the field effect transistor. | 02-04-2010 |
| 20100164378 | ELECTROLUMINESCENT DEVICE - An example embodiment there is provided an electroluminescent device comprising: an electroluminescent component, a first piezoelectric component, an alpha electrode and a first beta electrode, the electroluminescent component being located between the alpha electrode and the first piezoelectric component, the first beta electrode being in electrical contact with the alpha electrode and in electrical contact with the first piezoelectric component, the alpha electrode, first beta electrode, first piezoelectric component, and electroluminescent component being configured to generate a potential difference across the electroluminescent component responsive to a mechanical stress applied to the first piezoelectric component. | 07-01-2010 |
| 20100216023 | Process for producing carbon nanostructure on a flexible substrate, and energy storage devices comprising flexible carbon nanostructure electrodes - An energy storage device structure comprises a first electrode layer, an electrolyte layer and a second electrode layer. At least one of the electrode layers comprise a metallic foil base layer and a layer of carbon nanotubes grown on the base layer, the carbon nanotube layer being arranged to face the electrolyte layer. The structure may be made in such a way that its width and length are much larger than its thickness, so that it can rolled up or folded and then hermetically sealed to form an energy storage unit. The layer of carbon nanotubes is grown on the metallic foil base layer by a chemical vapor deposition process at a temperature no higher than 550° C. The carbon nanotubes in the carbon nanotube layer are at least partially aligned in a direction that is perpendicular to the surface of the metallic base layer. | 08-26-2010 |
| 20100327956 | GRAPHENE DEVICE AND METHOD OF FABRICATING A GRAPHENE DEVICE - In accordance with an example embodiment of the present invention, a device comprising one or more porous graphene layers, the or each graphene porous layer comprising a multiplicity of pores. The device may form at least part of a flexible and/or stretchable, and or transparent electronic device. | 12-30-2010 |
| 20100330409 | Method and apparatus - A method including: a) depositing a masking material over a substrate comprising silicon; b) removing the masking material using a first process that removes the masking material in preference to silicon; c) removing silicon using a second process that removes silicon in preference to the masking material; d) continuously repeating the sequence of steps a), b) and c) to control the creation of nanowires; and e) stopping repetition of the sequence of steps a), b) and c). | 12-30-2010 |
