Patent application number | Description | Published |
20090068273 | Inhalation devices for delivering phenethanolamine derivatives for the treatment of respiratory diseases - The invention provides inhalation devices comprising a compound which is 4-{(1R)-2-[(6-{2-[(2,6-dichlorobenzyl)oxy]ethoxy}hexyl)amino]-1-hydroxyethyl}-2-(hydroxymethyl)phenol; or a salt or solvate thereof, inhalation devices comprising formulations and combinations of the compound or a salt or solvate thereof, and methods for the treatment or prophylaxis of a clinical condition in a mammal by employing the inhalation devices | 03-12-2009 |
20100075995 | COMPOUNDS - Compounds of formula (I): | 03-25-2010 |
20110009631 | Phenethanolamine Derivatives for Treatment of Respiratory Diseases - Compounds of the formula (II) and (IV) are provided, which may be employed as intermediates for making compounds useful in treating respiratory diseases. | 01-13-2011 |
20110269970 | Phenethanolamine Derivatives for Treatment of Respiratory Diseases - (1R)-2-[(6-{2-[(2,6-dichlorobenzyl)oxy]ethoxy}hexyl)amino]-1-(2,2-dimethyl-4H-1,3-benzodioxin-6-yl)ethanol and (5R)-3-(6-{2-[(2,6-dichlorobenzyl)oxy]ethoxy}hexyl)-5-(2,2-dimethyl-4H-1,3-benzodioxin-6-yl)-1,3-oxazolidin-2-one are claimed | 11-03-2011 |
20120035193 | 6-AMINO-PURIN-8-ONE COMPOUNDS - Compounds of formula (I): | 02-09-2012 |
20120277279 | Non-Steroidal Glucocorticoid Inhibitors and Their Use in Treating Inflammation, Allergy and Auto-Immune Conditions - The present invention provides compounds of formula (I): | 11-01-2012 |
20120315291 | PURINE DERIVATIVES AND THEIR PHARMACEUTICAL USES - The present invention relates to compounds of formula (I): | 12-13-2012 |
20140051720 | N-Cyclobutyl - Imidazopyridine - Methylamine As TRPV1 Antagonists - A compound of formula (I) | 02-20-2014 |
20140056928 | NOVEL COMPOUNDS - Compounds of formula (I) and salts thereof: | 02-27-2014 |
20140336175 | PURINE DERIVATIVES FOR USE IN THE TREATMENT OF ALLERGIC, INFLAMMATORY AND INFECTIOUS DISEASES - The present invention relates to compounds of formula (I): | 11-13-2014 |
20150225403 | PYRAZOLOPYRIMIDINE COMPOUNDS - Compounds of formula (I) and salts thereof: | 08-13-2015 |
20150266883 | NOVEL COMPOUNDS - The present invention relates to Compounds of formula (I) and salts thereof: | 09-24-2015 |
Patent application number | Description | Published |
20140048016 | MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL - A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising:
| 02-20-2014 |
20140150713 | CONTROLLING DOPING OF SYNTHETIC DIAMOND MATERIAL - A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm | 06-05-2014 |
20140234556 | MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE - A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric E | 08-21-2014 |
20150030786 | MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL - A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm | 01-29-2015 |
20150061191 | MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE - The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm. | 03-05-2015 |