Patent application number | Description | Published |
20090244957 | MULTILEVEL MAGNETIC STORAGE DEVICE - The present invention includes a memory configured to store data having a pinned layer and a plurality of stacked memory locations. Each memory location includes a nonmagnetic layer and a switchable magnetic layer. The plurality of stacked memory locations are capable of storing a plurality of data bits. | 10-01-2009 |
20100134923 | MAGNETIC RANDOM ACCESS MEMORY WITH DUAL SPIN TORQUE REFERENCE LAYERS - A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage. | 06-03-2010 |
20110069535 | MAGNETIC RANDOM ACCESS MEMORY WITH DUAL SPIN TORQUE REFERENCE LAYERS - A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage. | 03-24-2011 |
20110298069 | MAGNETIC RANDOM ACCESS MEMORY WITH DUAL SPIN TORQUE REFERENCE LAYERS - A magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic cell includes first and second fixed magnetic layers and a free magnetic layer positioned between the fixed magnetic layers. The magnetic cell also includes terminals configured for providing a spin-polarized current through the magnetic layers. The first fixed magnetic layer has a magnetization direction that is substantially parallel to the easy axis of the free magnetic layer, and the second fixed magnetic layer has a magnetization direction that is substantially orthogonal to the easy axis of the free magnetic layer. The dual fixed magnetic layers provide enhanced spin torque in writing to the free magnetic layer, thereby reducing the required current and reducing the feature size of magnetic data storage cells, and increasing the data storage density of magnetic spin torque data storage. | 12-08-2011 |
Patent application number | Description | Published |
20090073858 | HAMR Recording Head Having A Sloped Wall Pole - An apparatus includes a waveguide having an end adjacent to an air bearing surface, first and second poles positioned on opposite sides of the waveguide, and wherein the first pole includes a first portion spaced from the waveguide and a second portion extending from the first portion to the air bearing surface, with the second portion being structured such that an end of the second portion is closer to the waveguide than the first portion. | 03-19-2009 |
20090109570 | WIRE AND WIRE LEAD DESIGNS FOR A WIRE-ASSISTED MAGNETIC WRITE DEVICE - A magnetic device includes a write element having a write element tip that defines a medium confronting surface. The write element is operable to generate a first field at the medium confronting surface. A conductor is proximate the write element tip and first and second conductive leads are connected to the conductor and configured to deliver a current to the conductor to generate a second field that augments the first field. First and second side elements are disposed on opposite sides of the write element tip in a cross-track direction at the medium confronting surface. At least a portion of the first conductive lead is disposed adjacent the first side element on a side opposite the medium confronting surface, and at least a portion of the second conductive lead is disposed adjacent the second side element on a side opposite the medium confronting surface. | 04-30-2009 |
20090147562 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 06-11-2009 |
20090158305 | DATA WRITING WITH PLASMON RESONATOR - A data writing system includes an array of cells for storing data and a write transducer that moves over a selected cell in the array of cells. The write transducer includes a writer producing a write magnetic field that intersects the selected cell. The write transducer also includes a plasmon resonator that is adjacent the writer. The plasmon resonator is shaped to receive lower power density radiation and to provide plasmon radiation at a higher power density to an optical spot intersecting with the selected cell. The plasmon radiation heats the selected cell above a write temperature. | 06-18-2009 |
20100271018 | SENSORS FOR MINUTE MAGNETIC FIELDS - A magnetic sensor includes a flux concentrator and a transducer producing an output responsive to a change in magnetization in the flux concentrator. The flux concentrator can include first, second and third portions, wherein the third portion is between the first and second portions and the cross-sectional area of the third portion is smaller than the cross-sectional area of the first and second portions, and the transducer can produce an output responsive to a change in magnetization in the third portion of the flux concentrator. | 10-28-2010 |
20110110147 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 05-12-2011 |
20120106240 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 05-03-2012 |
20120314547 | HAMR Recording Head Having a Sloped Wall Pole - An apparatus includes a waveguide having an end adjacent to an air bearing surface, first and second poles positioned on opposite sides of the waveguide, and wherein the first pole includes a first portion spaced from the waveguide and a second portion extending from the first portion to the air bearing surface, with the second portion being structured such that an end of the second portion is closer to the waveguide than the first portion. | 12-13-2012 |
20130051135 | COMPOUND CELL SPIN-TORQUE MAGNETIC RANDOM ACCESS MEMORY - A compound magnetic data storage cell, applicable to spin-torque random access memory (ST-RAM), is disclosed. A magnetic data storage cell includes a magnetic storage element and two terminals communicatively connected to the magnetic storage element. The magnetic storage element is configured to yield any of at least three distinct magnetoresistance output levels, corresponding to stable magnetic configurations, in response to spin-momentum transfer inputs via the terminals. | 02-28-2013 |