| Patent application number | Description | Published |
|---|
| 20080213962 | STRAINED SILICON WITH ELASTIC EDGE RELAXATION - A thin blanket epitaxial layer of SiGe is grown on a silicon substrate to have a biaxial compressive stress in the growth plane. A thin epitaxial layer of silicon is deposited on the SiGe layer, with the SiGe layer having a thickness less than its critical thicknesses. Shallow trenches are subsequently fabricated through the epitaxial layers, so that the strain energy is redistributed such that the compressive strain in the SiGe layer is partially relaxed elastically and a degree of tensile strain is induced to the neighboring layers of silicon. Because this process for inducing tensile strain in a silicon over-layer is elastic in nature, the desired strain may be achieved without formation of misfit dislocations. | 09-04-2008 |
| 20100065887 | FIELD EFFECT TRANSISTOR SOURCE OR DRAIN WITH A MULTI-FACET SURFACE - FET configurations in which two (or more) facets are exposed on a surface of a semiconductor channel, the facets being angled with respect to the direction of the channel, allow for conformal deposition of a convex or concave S/D. A convex tip of the S/D enhances electric fields at the interface, reducing the resistance between the S/D and the channel. In contrast, a S/D having a concave tip yields a dual-gate FET that emphasizes reduced short-channel effects rather than electric field enhancement. The use of self-limiting, selective wet etches to expose the facets facilitates process control, control of interface chemistry, and manufacturability. | 03-18-2010 |
| 20100229929 | Strained-Enhanced Silicon Photon-To-Electron Conversion Devices - Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins. | 09-16-2010 |
| 20110008953 | METHOD FOR MAKING SEMICONDUCTOR INSULATED-GATE FIELD-EFFECT TRANSISTOR HAVING MULTILAYER DEPOSITED METAL SOURCE(S) AND/OR DRAIN(S) - A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal. | 01-13-2011 |
| 20110092047 | Strained Semiconductor Using Elastic Edge Relaxation, a Buried Stressor Layer and a Sacrificial Stressor Layer - The present invention relates to creating an active layer of strained semiconductor using a combination of buried and sacrificial stressors. That is, a process can strain an active semiconductor layer by transferring strain from a stressor layer buried below the active semiconductor layer and by transferring strain from a sacrificial stressor layer formed above the active semiconductor layer. As an example, the substrate may be silicon, the buried stressor layer may be silicon germanium, the active semiconductor layer may be silicon and the sacrificial stressor layer may be silicon germanium. Elastic edge relaxation is preferably used to efficiently transfer strain to the active layer. | 04-21-2011 |
