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Clavelier
Everlyne Clavelier, Maule FR
| Patent application number | Description | Published |
|---|---|---|
| 20110102100 | METHOD FOR PSEUDO-DIFFERENTIAL TRANSMISSION USING MODAL ELECTRICAL VARIABLES - The invention relates to a method and a device for pseudo-differential transmission in interconnections used for sending a plurality of electrical signals. | 05-05-2011 |
Laurent Clavelier, Saint Egreve FR
| Patent application number | Description | Published |
|---|---|---|
| 20100221891 | METHOD OF PRODUCING A HYBRID SUBSTRATE BY PARTIAL RECRYSTALLIZATION OF A MIXED LAYER - A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated. | 09-02-2010 |
Laurent Clavelier, St. Egreve FR
| Patent application number | Description | Published |
|---|---|---|
| 20100155843 | FIELD EFFECT TRANSISTOR WITH ALTERNATE ELECTRICAL CONTACTS - A field effect transistor including: a support layer, a plurality of active zones based on a semiconductor, each active zone configured to form a channel and arranged between two gates adjacent to each other and consecutive, the active zones and the gates being arranged on the support layer, each gate including a first face on the side of the support layer and a second face opposite the first face. The second face of a first of the two gates is electrically connected to a first electrical contact made on the second face of the first of the two gates, and the first face of a second of the two gates is electrically connected to a second electrical contact passing through the support layer. The gates of the transistor are not electrically connected to each other. | 06-24-2010 |