Claude Fermon, Orsay FR
Claude Fermon, Orsay FR
Patent application number | Description | Published |
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20090206831 | Method and device for non destructive evaluation of defects in a metallic object - A device for non destructive evaluation of defects in a metallic object ( | 08-20-2009 |
20090302843 | SYSTEM FOR MEASURING A MAGNETIC RESONANCE SIGNAL BASED ON A HYBRID SUPERCONDUCTIVE-MAGNETORESISTIVE SENSOR - The system for measuring a magnetic resonance signal within a sample ( | 12-10-2009 |
20090309581 | Method and System for Adjusting the Sensitivity of a Magnetoresistive Sensor - The system for measuring high currents or magnetic fields using a magnetoresistive sensor ( | 12-17-2009 |
20100164490 | DEVICE BASED ON A MAGNETO-RESISTIVE MIXED SENSOR WITHOUT LOW FREQUENCY NOISE AND ASSOCIATED METHOD - A device comprises a mixed sensor design with at least one superconducting loop ( | 07-01-2010 |
20100173783 | METHOD FOR LOW FREQUENCY NOISE CANCELLATION IN MAGNETO-RESISTIVE MIXED SENSORS - The method for cancellation of low frequency noise in a magneto-resistive mixed sensor ( | 07-08-2010 |
20110068441 | Screened Electrical Device and a Process for Manufacturing the Same - A protected electrical device having at least one electrical sub-assembly ( | 03-24-2011 |
20130187645 | MAGNETORESISTOR INTEGRATED SENSOR FOR MEASURING VOLTAGE OR CURRENT, AND DIAGNOSTIC SYSTEM - The invention relates to an integrated sensor, including terminals ( | 07-25-2013 |
20150192648 | Magnetoresistance Element with Improved Response to Magnetic Fields - A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers. | 07-09-2015 |
20150192649 | Magnetoresistance Element with an Improved Seed Layer to Promote an Improved Response to Magnetic Fields - A magnetoresistance element has a seed layer that promotes an increased magnetic anisotropy of layers of the magnetoresistance element above the seed layer structure. | 07-09-2015 |
20150194597 | Magnetoresistance Element With Improved Response to Magnetic Fields - A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers. | 07-09-2015 |