Patent application number | Description | Published |
20110278687 | BACKSIDE-ILLUMINATED SENSOR WITH NOISE REDUCTION - A backside-illuminated sensor includes a substrate, at least one lens and at least one pixel structure. The substrate has a front surface and a backside surface, and the lens is formed on the backside surface of the substrate and the pixel structure is formed on a pixel area included in the front surface of the substrate, where a projected area of the pixel area on the backside surface in a thickness direction of the substrate is covered by the lens. The pixel structure includes a first power node for receiving a first supply voltage, a second power node for receiving a second supply voltage different from the first supply voltage, a sensing element and a capacitor for noise reduction. The sensing element generates a sensing signal according to an incident luminance from the lens. | 11-17-2011 |
20110284984 | IMAGE SENSOR AND FABRICATING METHOD THEREOF - The present invention provides an image sensor and a fabricating method thereof capable of approaching higher quantum efficiency and reducing cost. The method comprises: providing a substrate; forming a pixel region on a top surface of the substrate; forming an interlayer insulating layer and at least a metal line on the pixel region; forming an isolation carrier layer having a hole array therein on the interlayer insulating layer; grinding a lower surface of the substrate to reduce the thickness of the substrate; placing a plurality of conductors into the hole array to form a plurality of bumps on the isolation carrier layer. | 11-24-2011 |
20110291211 | IMAGE SENSOR AND RELATED FABRICATING METHOD THEREOF - A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material. | 12-01-2011 |
20120032241 | IMAGE SENSOR - An image sensor includes: a substrate, at least a pixel, and at least a light shield is provided. Wherein the pixel includes a photodiode and at least a transistor, and the transistor is connected to a metal line via a contact. The light shield is positioned around at least one side of the pixel, wherein the light shield is made while forming the contact. | 02-09-2012 |
20120080766 | Image Sensing Device and Fabrication Thereof - An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well. | 04-05-2012 |
20120193691 | BACK-SIDE ILLUMINATION IMAGE SENSOR - A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the first transistor. | 08-02-2012 |
20130122636 | METHOD FOR FORMING AN IMAGE SENSING DEVICE - A method for forming an image sensing device is disclosed. An epitaxy layer having the first conductivity type is formed on a substrate, wherein the epitaxy layer comprises a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light. A first deep well is formed in a lower portion of the epitaxy layer for reducing pixel-to-pixel talk of the image sensing device. A second deep well is formed in a lower portion of the epitaxy layer. | 05-16-2013 |
20140246713 | SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING THE SAME AND METHOD FOR SUPPRESSING HOT CLUSTER - A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant concentration smaller than the first dopant concentration and directly disposed on the substrate, a dopant gradient region disposed in the epitaxial layer and having a gradient decreasing from the substrate to the epitaxial layer, a shallow trench isolation disposed between a first element region and a second element region, and a shallow trench doping region surrounding the shallow trench isolation and near the dopant gradient region to suppress a hot cluster formed by the first element region to jeopardize the second element region. | 09-04-2014 |