Patent application number | Description | Published |
20090121159 | CLUSTER E-BEAM LITHOGRAPHY SYSTEM - A hybrid lithography system is disclosed to achieve high throughput and high resolution of sub 32 nm lithography. The hybrid system contains an optical lithographer for expose pattern area where features above 32 nm, and a cluster e-beam lithography system for expose pattern area where features is sub 32 nm. | 05-14-2009 |
20100084554 | METHOD OF CONTROLLING PARTICLE ABSORPTION ON A WAFER SAMPLE BEING INSPECTED BY A CHARGED PARTICLE BEAM IMAGING SYSTEM - A method of controlling particle absorption on a wafer sample being inspected by a charged particle beam imaging system prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process. | 04-08-2010 |
20100090107 | METHOD AND HANDLING APPARATUS FOR PLACING PATTERNING DEVICE ON SUPPORT MEMBER FOR CHARGED PARTICLE BEAM IMAGING - A patterning device handling apparatus for use in charged particle beam imaging is disclosed. The disclosed patterning device handling apparatus comprises a first gripping member and a second gripping member. The first gripping member is equipped with a plurality of first positioning projections, and the second gripping member is equipped with a plurality of second positioning projections. When the patterning device is held at one angle, the first positioning projections abut against one edge of the patterning device and the second positioning projections abut against the opposite edge of the patterning device. When the patterning device is held at another angle, the first positioning projections abut against two neighboring edges of the patterning device, and the second positioning projections abut against the other two neighboring edges of the patterning device. Therefore, the disclosed patterning device handling apparatus can hold the pattering device at different angles. | 04-15-2010 |
20100102226 | PATTERNING DEVICE HOLDING APPARATUS AND APPLICATION THEREOF - A patterning device holding apparatus includes a support platform unit with a plurality of first positioning projections and a gripper unit. The gripper unit includes a head portion and a plurality of second positioning projections disposed on the head portion, and a rolling member set at a base portion. The grapping and releasing of the patterning device is achieved by the rotation of the gripper unit about a pivot substantially parallel with the center axis of the rolling member. The first and second positioning projections corporately abut against the edges of a patterning device to fix the patterning device in place. | 04-29-2010 |
20100150429 | E-BEAM DEFECT REVIEW SYSTEM - The present invention relates to a defect review system, and/or particularly, to an apparatus and method of defect review sampling, review method and classification on a semiconductor wafer or a pattern lithography reticle during integrated circuit fabrication. These objects are achieved in comparing a reviewed image with a reference image pick-up through a smart sampling filter. A clustering computer system base on high speed network will provide data cache and save operation time and memory. A smart review sampling filter automatically relocate abnormal pattern or defects and classify the device location extracted from design database and/or from golden die image on the same substrate. The column of the present defect review system is comprised of the modified SORIL type objective lens. This column provides solution of improving throughput during sample review, material identification better image quality, and topography image of defect. One embodiment of the present invent adopts an optical auto focusing system to compromise micro height variation due wafer surface topography. And another embodiment adopts surface charge control system to regulate the charge accumulation due to electron irradiation during the review process. | 06-17-2010 |
20100288923 | DISCHAGING METHOD FOR CHARGED PARTICLE BEAM IMAGING - A layer of conductive or semi-conductive material is formed on a surface of a sample and then the sample, when being charged particle beam imaged, is electrically coupled with an object having a large charge-receiving or charge-storage capacity (e.g., capacitance). Hence, the charging on the sample surface is removed and released quickly by the layer. The layer is then removed by reacting it with a predefined agent. The reaction forms a gaseous product which does not form a physical or chemical bond to the sample surface. | 11-18-2010 |
20110101222 | Z-STAGE CONFIGURATION AND APPLICATION THEREOF - A stage configuration is provided, wherein a ceramic plate is used as the z-stage body to decrease the use of the metal plates in the conventional configuration, so that the compact structure of the z-stage may decrease the vibrational movements of the z-stage. Further, two Laser interferometer are used to detect a movement of different points along a vertical line of the z-stage sidewall to calculate a movement of the specimen surface, so that a horizontal movement of the specimen surface can be detected more accurately | 05-05-2011 |
20120006984 | METHOD OF CONTROLLING PARTICLE ABSORPTION ON A WAFER SAMPLE BEING INSPECTED BY A CHARGED PARTICLE BEAM IMAGING SYSTEM - A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process. | 01-12-2012 |
20120280125 | CHARGED PARTICLE SYSTEM FOR RETICLE / WAFER DEFECTS INSPECTION AND REVIEW - The present invention relates to a charged particle system for reticle or semiconductor wafer defects inspection and review, and more particularly, relates to an E-beam inspection tool for reticle or semiconductor wafer defects inspection and review without gravitational AMC settling. The charged particle system is an upside down electron beam inspection system with an electron beam aimed upward. The face down design may prevent AMC from gravitational settling on the inspected face of the specimen during inspection, thereafter having a cleaner result compared with conventional face-up inspection system. | 11-08-2012 |
20120292509 | STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK - A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded. | 11-22-2012 |
20130176549 | Reticle Operation System - A system for operating EUV mask stored in reticle SMIF pod and/or dual pod is provided, wherein the reticle SMIF pod and Dual pod are for storing EUV mask. The system can be a sorter for EUV mask transferred from reticle SMIF pod into dual pod, and vice versa, or an operating system for tools relating to EUV mask, wherein the tools may be EUV lithography, or inspection tool for inspecting EUV mask. | 07-11-2013 |
20140027634 | STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK - A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded. | 01-30-2014 |