| Patent application number | Description | Published |
|---|
| 20090275369 | STATION CONTROL METHOD AND STATION USING THE SAME - An apparatus is provided, for reducing power consumption in a system operating in a power saving mode, comprising a controller, an oscillator circuit and a voltage regulator. The controller provides a first control signal and a second control signal. The oscillator circuit, connected to the controller, wherein the controller controls the oscillator circuit according to the second control signal. The voltage regulator providing electric power to the oscillator circuit, connected to the controller, wherein the controller controls the voltage regulator according to the first control signal. | 11-05-2009 |
| 20100304780 | Low Power Module for a Station of a Wireless Communication System and Related Method - The invention relates to a low power module, and in particular, to a low power module applied in a station of a wireless communication system. A low power module includes a first MAC module, a second MAC module, a low power switch register, a control register unit, a slow clock generator, and a multiplexer (MUX). The first and second MAC module transmits and receives packets in a normal operational mode and a power save mode, respectively. The low power switch register switches a current mode to another mode. The control register unit controls the RF/BB module and the clock generator under the control of the low power switch register. The slow clock generator generates a slow operational clock for the second MAC module in the power save mode. The MUX chooses the normal operational or the slow operational clock periodically as a clock of the second MAC module according to the control register unit. | 12-02-2010 |
| Patent application number | Description | Published |
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| 20090141534 | DETECTION APPARATUS AND METHOD FOR SEQUENTIALLY PROGRAMMING MEMORY - A detection apparatus for sequentially programming a memory is provided. The detection apparatus comprises a current sensor and a programming controller. The current sensor is coupled to a programming source and a memory cell. The current sensor detects change of a programming current between the programming source and the memory cell and generates a control signal according to the detection result. The programming controller is coupled to the current sensor. The programming controller receives the control signal and generates a programming state signal. | 06-04-2009 |
| 20090238023 | MEMORY SYSTEM - A memory system is provided, comprising at least one memory unit and a source power supply circuit. Each memory unit is coupled between a source voltage and a ground voltage and accesses digital data according to a word line signal and a bit line signal. The source power supply circuit provides the source voltage to the memory units. When the memory unit is in a writing status, the source voltage is the first power voltage. When the memory unit is in a reading status, the source voltage is the second power voltage. The second power voltage equals to the first power voltage subtracted by a specific voltage for avoiding rewriting error. | 09-24-2009 |
| 20100177556 | ASYMMETRIC STATIC RANDOM ACCESS MEMORY - An asymmetric static random access memory (SRAM) device that includes at least one SRAM cell is provided. The SRAM cell includes the first inverter and the second inverter. The first inverter is coupled between a first power and a ground power, and includes a first output terminal coupled to a first node and a first input terminal coupled to a second node. The second inverter is coupled between the first power and the ground power, and includes a second input terminal coupled to the first node and a second output terminal coupled to the second node. When the first inverter and the second inverter receive current from the first power, the SRAM cell is programmed to a predetermined value in advance according to different conductance levels of the first inverter and the second inverter. | 07-15-2010 |
| 20100202219 | BURN-IN METHODS FOR STATIC RANDOM ACCESS MEMORIES AND CHIPS - A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure. | 08-12-2010 |
