| Patent application number | Description | Published |
|---|
| 20080272451 | Image Sensor and Method of Manufacturing The Same - An image sensor and method of manufacturing the same are provided. The image sensor can include a semiconductor substrate having unit pixels; an interlayer dielectric layer formed on the semiconductor substrate and including metal interconnections; a first protective layer comprising an oxide layer formed on the interlayer dielectric layer; a second protective layer comprising an oxide-nitride layer formed on the first protective layer; and a microlens formed on the second protective layer. | 11-06-2008 |
| 20080274580 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor including forming a metal line layer on a semiconductor substrate, and then forming color filters on the metal line layer, and then forming seed microlenses spaced apart on the color filters, and then cleaning the surface of the seed microlenses, and then forming a gapless microlenses on the color filters by depositing an inorganic layer on the seed microlenses and in spaces therebetween. A gapless microlens can prevent crosstalk and noise and enhance the image quality of the image sensor. Forming the microlens of thin inorganic layer can prevent cracking due to physical impacts. The adhesive force can be enhanced between the first and second organic films of the microlens by performing cleaning processes, which in turn, enhances the refractive index and light transmittance for incident light. | 11-06-2008 |
| 20080286896 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method for manufacturing an image sensor including forming an interlayer dielectric layer on a substrate including a photo diode; forming a color filter layer on the interlayer dielectric layer; forming an oxide film on the color filter layer; forming a plurality of micro lens patterns spaced apart on the oxide film; forming an oxide-based micro lens having a predetermined curvature by etching the oxide film using the micro lens pattern as a mask; and cleaning the micro lens patterns with a peroxosulfuric acid mixing solution. | 11-20-2008 |
| 20080286897 | Method for Manufacturing Image Sensor - Provided is a method for manufacturing an image sensor. In the method, a microlens is formed from an oxide layer. The oxide layer used for the microlenses can be formed using a nitrogen gas as dopant. A plurality of photoresist patterns can be formed on the oxide layer, and the oxide layer can be etched using the photoresist patterns as a mask to form-oxide layer microlenses having a constant curvature. In a further embodiment, a plasma treatment can be applied to the photoresist patterns during forming of the oxide layer microlenses. | 11-20-2008 |
| 20090001544 | CHIP STACKED STRUCTURE AND METHOD OF FABRICATING THE SAME - A chip stacked structure and a method of fabrication the same that may include a first chip having first semiconductor devices and a first connection pad electrically connected to the first semiconductor devices, a second chip stacked on the first chip, the second chip having second semiconductor devices and a second connection pad electrically connected to the second semiconductor devices, and a connection member interposed between the first connection pad and the second connection pad to electrically connect the first connection pad and the second connection pad. The connection member has lower electric resistance than when the chips are unstacked, and thus, offers high reliability and performance. | 01-01-2009 |
| 20090029548 | METHOD FOR REMOVING POLYMER RESIDUE FROM METAL LINES OF SEMICONDUCTOR DEVICE - It is possible to substantially remove a polymer residue from metal lines formed over a semiconductor device without damage to the metal lines. The disclosed method includes forming a metal layer over a lower layer. A photoresist film is formed over the metal layer, and then patterned. The metal layer is selectively etched, using the patterned photoresist film as an etch barrier, to form metal lines. A substantial portion of the photoresist film left on the metal lines is removed, leaving a polymer residue. Ultraviolet rays are irradiated onto the metal lines to degrade the polymer residue, and the residue is rinsed away. | 01-29-2009 |
| 20090117682 | Method for Manufacturing Image Sensor - A method for manufacturing an image sensor is provided. The method can include forming an oxide layer on a color filter layer, forming a first oxide layer microlens by etching the oxide layer, forming a second oxide layer microlens on the first oxide layer microlens, and forming a third oxide layer microlens on the second oxide layer microlens. | 05-07-2009 |
| 20090140373 | Method of Manufacturing LCD Driver IC - Disclosed is a method of manufacturing an LCD driver IC. The method includes forming a plurality of gate patterns on a semiconductor substrate by sequentially forming a plurality of gate insulating films and gate electrodes; sequentially depositing a plurality of spacer material layers covering the gate electrodes; forming spacers on the side walls of the gate electrodes by performing an etchback process on the plurality of spacer material layers such that the lowermost spacer material layer remains on the semiconductor substrate; and controlling the thickness of the lowermost spacer material layer (or removing the lowermost spacer material layer) by etching the lowermost spacer material layer. | 06-04-2009 |
| 20090142914 | Method for Manufacturing Semiconductor Device - Disclosed are methods for manufacturing a semiconductor device, capable of inhibiting an undercut from occurring in a dielectric layer formed between a floating gate and a control gate. In one method, the dielectric layer can be protected using a covering of a nitride layer that can be used as a hard mask for gate patterning in a flash memory device. In another method, the gate stack can be inhibited from being damaged by changing the material of the hard mask used to etch the gate stack. For example, an LTO can be used as the hardmask. | 06-04-2009 |
| 20090155950 | CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a CMOS image sensor includes sequentially forming an insulating film, a metal pad and a first passivation film over a semiconductor substrate including photodiodes, forming a planarization layer over the first passivation film, forming color filter layers over the planarization layer, forming an overcoating layer over the semiconductor substrate including the color filter layers, forming micro lenses over the overcoating layer, forming a photoresist film over the semiconductor substrate including the first passivation film and the micro lenses, and then etching the first passivation film using the photoresist film as a mask to expose the metal pad. | 06-18-2009 |
| 20090162984 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed are methods for manufacturing a semiconductor device. One method includes the steps of forming a gate electrode on a semiconductor substrate, sequentially forming a first oxide layer, a nitride layer and a second oxide layer on the semiconductor substrate including the gate electrode, dry-etching the second oxide layer, wet-etching the nitride layer, and forming source and drain regions at sides of the gate electrode by implanting ions into the semiconductor substrate on which the first oxide layer is formed. According to the method, in the process of forming a gate spacer in the semiconductor device, an oxide layer of the gate spacer remains on the source and drain regions, and then an ion implantation process is performed, so that plasma damage and current leakage can be inhibited from occurring in the source and drain regions. Thus, device characteristics of a CMOS image sensor can be improved. | 06-25-2009 |
| 20090166692 | CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A CMOS image sensor may include a dielectric layer formed on a semiconductor substrate, first and second passivation layers sequentially formed on the whole surface of the dielectric layer, a planarization layer, a color filter layer, and an overcoating layer and a microlens sequentially formed on the second passivation layer. The CMOS image sensor may further include a plurality of metal pads arranged on the dielectric layer to surround the microlens, a water barrier formed on the dielectric layer between the microlens and the metal pads, and first and second open parts exposing the metal pads and the water barrier. | 07-02-2009 |
| 20090166791 | METHOD FOR MANUFACTURING IMAGE SENSOR - Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, an interlayer insulating layer including a metal line may be formed on and/or over a semiconductor substrate. A lower electrode layer connected with the metal line may be formed on and/or over the interlayer insulating layer. A photoresist pattern may be formed on and/or over the lower electrode layer and may form lower electrodes separated from each other. The photoresist pattern may be removed. A polymer with Cl group that may be generated when removing the photoresist pattern may be removed. According to embodiments, by removing the polymer, photons that may be generated in a photo diode may be more easily gathered, which may enhance an image quality of an image sensor. | 07-02-2009 |
| 20100032786 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE DEVICE - A semiconductor device and a method for manufacturing the device include connecting a second wafer to a first wafer, forming a hard mask layer on and/or over a backside of the second wafer, forming a hard mask pattern over the second layer and then forming a via hole by etching the first and the second wafers to a predetermined depth using the hard mask pattern as an etching mask. | 02-11-2010 |
| 20100093128 | METHOD FOR MANUFACTURING IMAGE SENSOR - In a method for manufacturing an image sensor, readout circuitry is formed in a first substrate. A first interlayer dielectric is formed over the first substrate. An interconnection is formed at the first interlayer dielectric, and the interconnection is electrically connected to the readout circuitry. A second interlayer dielectric is formed over the interconnection. A via hole exposing an upper side of the interconnection is formed by etching a portion of the second interlayer dielectric using a photoresist pattern as an etch mask. A contact plug is formed in the via hole, while leaving the photoresist pattern. The photoresist pattern is then removed. An image sensing device is formed over the contact plug. | 04-15-2010 |
| 20100105179 | METHOD FOR MANUFACTURING FLASH MEMORY DEVICE - A method for manufacturing a flash memory device is capable of controlling a phenomenon in which a length of the channel between a source and a drain is decreased due to undercut. The method includes forming a gate electrode comprising a floating gate, an ONO film and a control gate using a hard mask pattern over a semiconductor substrate, forming a spacer over the sidewall of the gate electrode, forming an low temperature oxide (LTO) film over the entire surface of the semiconductor substrate including the gate electrode and the spacer, etching the LTO film such that a top portion of the source/drain region and a top portion of the gate electrode are exposed, and removing the LTO film present over the sidewall of the gate electrode by wet-etching. | 04-29-2010 |
| 20100105212 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a device, including a semiconductor device. A method of fabricating a semiconductor device may include forming a photoresist pattern on and/or over a substrate, which may expose a predetermined region supposed to include a metal line thereover. A method of fabricating a semiconductor device may include etching a substrate, for example using reactive ion etching, which may use a photoresist pattern. A method of fabricating a semiconductor device may include cleaning a substrate using a liquid inorganic compound. An apparatus may include a photoresist pattern over a substrate, and may include a substrate etched by reactive ion etching using a photoresist pattern and/or cleaned using a liquid inorganic compound. | 04-29-2010 |
| 20100117174 | METHOD OF MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor and devices thereof. A method of manufacturing an image sensor may include forming an interlayer dielectric layer, which may include a metal line, on and/or over a semiconductor substrate. A method of manufacturing an image sensor may include forming an image sensing part, including a stacked structure having a first doped layer and/or a second doped layer, on and/or over a interlayer dielectric layer. A method of manufacturing an image sensor may include forming a via hole, which may expose a metal line by perforating a image sensing part and/or a interlayer dielectric layer. A method of manufacturing an image sensor may include performing a cleaning process. An undercut may be formed on and/or over a image sensing part when a via hole is formed, and/or a native oxide layer may be substantially removed from a undercut through a cleaning process. | 05-13-2010 |
| 20100117184 | METHOD OF MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor and an image sensor. A method of manufacturing an image sensor may include forming an interlayer dielectric including a metal line on and/or over a semiconductor substrate, forming an image sensing part on and/or over an interlayer dielectric, and/or forming a hard mask in which an opening corresponding to a metal line may be defined on and/or over an image sensing part. A method of manufacturing an image sensor may include performing an etch process to form an auxiliary via hole exposing an inside of an image sensing part, and/or forming a spacer within a auxiliary via hole by an etch byproduct of a hard mask. A method of manufacturing an image sensor may include performing an etch process including a chemical to remove a spacer, and/or etching an image sensing part and/or an interlayer dielectric to form a deep via hole. | 05-13-2010 |
| 20100120194 | METHOD OF MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor includes forming an interlayer dielectric including a metal line on a semiconductor substrate, forming an image sensing part, over which a first doped layer and a second doped layer are stacked, over the interlayer dielectric, forming a via hole exposing the metal line, the via hole passing through the image sensing part and the interlayer dielectric, forming a first barrier layer and a second barrier layer over surfaces defining the via hole, forming a contact plug inside the via hole to have a first height equal to that of the first doped layer, thereby exposing the second barrier layer over the second doped layer inside the via hole, performing a wet etch process on the exposed second barrier layer to form a second barrier pattern having the same height as that of the contact plug, and performing a wet etch process on the first barrier layer to expose the second doped layer within the via hole, thereby forming a first barrier pattern. | 05-13-2010 |
| 20100120195 | METHOD FOR MANUFACTURING IMAGE SENSOR - In a method for forming an image sensor, an interlayer dielectric may be formed over a semiconductor substrate. The interlayer dielectric may include an interconnection. A via hole may be formed through the interlayer dielectric by performing an etching process on the semiconductor substrate. The via hole exposes the interconnection. A first cleaning process and a second cleaning process may be performed on the semiconductor substrate including the via hole. The contact plug may be formed by filing a metal material in the via hole. The image sensing unit, with a first doping layer and a second doping layer stacked therein may be formed over the interlayer dielectric including the interconnection and the contact plug. Here, the first and second cleaning processes include removing residues formed over a sidewall of the via hole through the etching process. | 05-13-2010 |
| 20100155955 | METHOD FOR MANUFACTURING SYSTEM-IN-PACKAGE - A method of manufacturing a System In Package (SIP) and devices thereof. A method of manufacturing a SIP may include providing a first chip having a first substrate region and/or a first metal connection portion. A method of manufacturing a SIP may include providing a second chip having a second substrate region and/or a second metal connection portion. A method of manufacturing a SIP may include bonding a first metal connection portion with a second metal connection portion, which may stack a second chip with a first chip. A method of manufacturing a SIP may include subjecting a second substrate region to reactive ion etching to expose a portion of a second metal connection portion and/or to form a deep contact hole. A method of manufacturing a SIP may include treating a surface of a deep contact hole with tetra-methyl ammonium hydroxide and/or nitric acid. | 06-24-2010 |
| 20100159680 | Method for Manufacturing Semiconductor Device - A method for manufacturing a semiconductor device is disclosed. The method includes the steps of forming a nitride film on a semiconductor substrate, forming a photoresist pattern on the nitride film, the photoresist pattern exposing a portion of the semiconductor substrate, implanting in a portion of the semiconductor substrate using the photoresist pattern as a mask, removing the photoresist pattern by ashing and/or stripping, washing the resulting structure to remove photoresist pattern splinters, fragments or particles on the nitride film, and removing the nitride film by wet etching. | 06-24-2010 |
| 20100159697 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device may include forming a first oxide film, a nitride film and/or a second oxide film over a substrate, and may include forming a trench over a semiconductor substrate by etching a portion of a first oxide film, a nitride film, a second oxide film and/or a semiconductor substrate. A method of manufacturing a semiconductor device may include performing wet etching to form a divot, which may be performed over a semiconductor substrate having a trench, and/or which may expose a portion of a nitride film. A method of manufacturing a semiconductor device may include removing a second oxide film having a portion thereof etched and a portion of a first oxide film exposed by a divot, while rounding upper edge portions of a trench using a mixed solution of deionized water and HF. A semiconductor device formed by a method is disclosed. | 06-24-2010 |
| 20100163294 | METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE - A method of forming a metal line of a semiconductor device, and devices thereof. A method of forming a metal line of a semiconductor device may include forming a multi-layer structure over a substrate, forming a photoresist pattern over a multi-layer structure, forming a metal line by selectively etching a multi-layer structure using a photoresist pattern as an etching mask, removing an electron over a surface of a metal line by processing a surface of a metal line, and/or cleaning a metal line. | 07-01-2010 |
| 20100163964 | METHOD FOR MANUFACTURING FLASH MEMORY DEVICE - A method of manufacturing a flash memory device and devices thereof, which may be capable of preventing damage to a gate. A method of manufacturing a flash memory device may include preparing a semiconductor substrate having an active region defined by a device separator. A method of manufacturing a flash memory device may include forming a floating gate, a oxide-nitride-oxide (ONO) layer and/or a control gate layer on and/or over a substrate. A method of manufacturing a flash memory device may include forming a low temperature oxide (LTO) film on and/or over a control gate, etching a LTO film to expose a desired part of a control gate, using a LTO film as a mask to etch a desired part of each of a floating gate layer, a ONO layer and/or a control gate to form a gate pattern, and/or substantially removing a LTO film by wet etching. | 07-01-2010 |
| 20100164037 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming a circuit area including a circuitry on and/or over a semiconductor substrate having a pixel area and/or a peripheral area, provided with a photodiode. A method may include forming a metal interconnection layer, which may include a metal interconnection on and/or over a interlayer dielectric layer, on and/or over a circuit area, forming a trench over a metal interconnection layer of a pixel area, performing a cleaning process on and/or over a the metal interconnection layer including a trench, and/or forming a micro-lens on and/or over a bottom surface of a trench of a metal interconnection layer. | 07-01-2010 |
| 20100164043 | METHOD FOR FABRICATING CMOS IMAGE SENSOR - A method of forming a CMOS image sensor and a CMOS image sensor. A method of forming a CMOS image sensor may include forming a plurality of photodiodes on and/or over a semiconductor substrate at regular intervals, forming an interlayer insulating film on and/or over an entire surface of a semiconductor substrate including photodiodes, coating an organic compound on and/or over an entire surface of an interlayer insulating film, coating photoresist on and/or over an organic compound, subjecting a photoresist to exposure and/or development to form a photoresist pattern which may expose an interlayer insulating film opposite to a photodiode region, selectively etching a portion of an exposed interlayer insulating film using a photoresist pattern as a mask, and/or removing a photoresist pattern. | 07-01-2010 |
| 20100167455 | METHOD FOR FABRICATION OF CMOS IMAGE SENSOR - Disclosed is a method for fabrication of a CMOS image sensor capable of improving adhesion between an interlayer insulating film and photoresist. According to embodiments in this disclosure, the CMOS image sensor fabrication method may include: forming a plurality of photodiodes over a semiconductor substrate at regular intervals; forming an interlayer insulating film over the semiconductor substrate including the plurality of photodiodes; applying photoresist over the entirety of the interlayer insulating film; hard-baking the photoresist; conducting exposure and development of the photoresist to expose a part of the interlayer insulating film corresponding to the photodiodes, thereby completing a photoresist pattern; and using the photoresist pattern as a mask to selectively etch the exposed part of the interlayer insulating film. | 07-01-2010 |
| 20100167524 | METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE - In a method for fabricating a metal interconnection of a semiconductor device, a lower interconnection and a lower insulation layer are formed over a semiconductor substrate. An etch stop layer is formed over the lower insulation layer. An upper insulation layer is formed over the etch stop layer. A first via hole is formed to expose the etch stop layer corresponding to the lower interconnection. A second via hole exposing the lower interconnection is formed by a primary etching process that selectively removes the etch stop layer exposed by the first via hole. A chemical cleaning process is performed on the second via hole, wherein polymer is formed over the surface of the lower interconnection during the chemical cleaning process. The polymer is removed from the second via hole by a secondary etching process using vaporized gas. | 07-01-2010 |
| 20100167530 | METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE - Disclosed is a method for forming a metal line of a semiconductor device. The method includes forming a first photoresist pattern on at least one interlayer dielectric provided on a semiconductor substrate, etching the interlayer dielectric using the first photoresist pattern to form a trench, removing the first photoresist pattern by ashing, and primarily removing residues left in the trench using a first cleaning solution comprising TMH, H | 07-01-2010 |
| 20100167536 | METHOD FOR REMOVING HARDENED POLYMER RESIDUE - A method for efficiently removing hardened polymer residues generated in the process of forming metal lines. The method includes forming a metal layer over a lower film, forming a sacrificial protective film over the metal layer, forming a photosensitive pattern over the sacrificial protective film, forming a metal line by selectively etching the sacrificial protective film and the metal layer using the photosensitive pattern as a mask such that a residual sacrificial protective film is formed over the metal line, and then removing the residual sacrificial protective film from the metal line. | 07-01-2010 |
