Patent application number | Description | Published |
20080230317 | Oil Circulation System For A Compressor - An oil circulation system for a compressor comprises a control valve body integrated therein with a pressure sensor, a differential pressure sensor and a temperature sensor. The control valve body is further integrated therein with a temperature control valve connected to an external cooler for lowering a temperature of a hydraulic oil, an oil filter for filtering the cooled hydraulic oil into a clean hydraulic oil, and a pressure relief valve for relieving a pressure of the clean hydraulic oil, which is then circulated back into the compressor for use. The integration of the aforementioned components effectively downsizes an entire set of machinery comprising the compressor and the oil circulation system and increases an efficiency of the compressor. | 09-25-2008 |
20090035937 | In-Situ Deposition for Cu Hillock Suppression - A semiconductor interconnect structure having reduced hillock formation and a method for forming the same are provided. The semiconductor interconnect structure includes a conductor formed in a dielectric layer. The conductor includes at least three sub-layers, wherein the ratio of the impurity concentrations in neighboring sub-layers is preferably greater than about two. | 02-05-2009 |
20120273899 | SYSTEM AND METHODS FOR CONVERTING PLANAR DESIGN TO FINFET DESIGN - A method for generating a layout for a device having FinFETs from a first layout for a device having planar transistors is disclosed. The planar layout is analyzed and corresponding FinFET structures are generated in a matching fashion. The resulting FinFET structures are then optimized. Dummy patterns and a new metal layer may be generated before the FinFET layout is verified and outputted. | 11-01-2012 |
20130187388 | Rear-Mounted Vehicular Wind Power Generator System - A rear-mounted vehicular power generator system comprises a power generator, a blade wheel, a power generator shaft, an air guiding hood, wires, and fixed terminals. The vehicular wind power generator system is mounted in the rear of a vehicle. When the vehicle is running, air flows through the air guiding hood and drives the blade wheel to rotate. The power generator shaft, which is fixed to the blade wheel, rotates together with the blade wheel and drives the power generator to generate electric energy. The electric energy is stored in a battery for various applications. The present invention is characterized in that the vehicular wind power generator system is mounted in the rear of a vehicle, neither hindering vision of the driver nor impairing balance of the vehicle running at high speed. | 07-25-2013 |
20140048888 | Strained Structure of a Semiconductor Device - A semiconductor device comprises a substrate comprising a major surface; a p-type Field Effect Transistor (pFET) comprising: a P-gate stack over the major surface, a P-strained region in the substrate adjacent to one side of the P-gate stack, wherein a lattice constant of the P-strained region is different from a lattice constant of the substrate, wherein the P-strained region has a first top surface higher than the major surface; and a P-silicide region on the P-strained region; and an n-type Field Effect Transistor (nFET) comprising: an N-gate stack over the major surface, an N-strained region in the substrate adjacent to one side of the N-gate stack, wherein a lattice constant of the N-strained region is different from a lattice constant of the substrate, wherein the N-strained region has a second top surface lower than the major surface and a N-silicide region on the N-strained region. | 02-20-2014 |
20140147978 | Strained Structure of a Semiconductor Device - A semiconductor device comprises a substrate comprising a major surface; a p-type Field Effect Transistor (pFET) comprising: a P-gate stack over the major surface, a P-strained region in the substrate adjacent to one side of the P-gate stack, wherein a lattice constant of the P-strained region is different from a lattice constant of the substrate, wherein the P-strained region has a first top surface higher than the major surface; and a P-silicide region on the P-strained region; and an n-type Field Effect Transistor (nFET) comprising: an N-gate stack over the major surface, an N-strained region in the substrate adjacent to one side of the N-gate stack, wherein a lattice constant of the N-strained region is different from a lattice constant of the substrate, wherein the N-strained region has a second top surface lower than the major surface and a N-silicide region on the N-strained region. | 05-29-2014 |
20140319462 | BUFFER LAYER OMEGA GATE - A device comprises insulation regions disposed in a substrate and a semiconductor fin extending above top surfaces of the insulation regions. The semiconductor fin comprises a first material. A semiconductor region comprising a second material extends from a first side of the semiconductor fin over a top of the fin to a second side of the fin. A strain buffer layer is disposed between, and contacts, the semiconductor fin and the semiconductor region. The strain buffer layer comprises an oxide, and a bottommost surface of the strain buffer layer is vertically spaced apart from the top surfaces of the insulation regions. | 10-30-2014 |
20140332904 | SYSTEM AND METHODS FOR CONVERTING PLANAR DESIGN TO FINFET DESIGN - A FinFET structure layout includes a semiconductor substrate comprising a plurality of FinFET active areas, and a plurality of fins within each FinFET active area of the plurality of FinFET active areas. The FinFET structure layout further includes a gate having a gate length parallel to the semiconductor substrate and perpendicular to length of the plurality of fins within each FinFET active area of the plurality of FinFET active areas. The FinFET structure layout further includes a plurality of metal features connecting a source region or a drain region of a portion of the plurality of FinFET active areas to a plurality of contacts. The plurality of metal features includes a plurality of metal lines parallel to a FinFET channel direction and a plurality of metal lines parallel to a FinFET channel width direction. | 11-13-2014 |
20140361336 | Fin Structure of Semiconductor Device - The disclosure relates to a fin structure of a semiconductor device. An exemplary fin structure for a semiconductor device comprises a lower portion protruding from a major surface of a substrate, wherein the lower portion comprises a first semiconductor material having a first lattice constant; an upper portion having an interface with the lower portion, wherein the upper portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; a first pair of notches lower than the interface and extending into opposite sides of the lower portion, wherein each first notch have a first width; and a second pair of notches extending into opposite sides of the interface, wherein each second notch have a second width greater than the first width. | 12-11-2014 |
20140367800 | SEMICONDUCTOR DEVICE WITH STRAIN TECHNIQUE - The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a fin structure disposed over the substrate in the gate region. The fin structure includes a first semiconductor material layer as a lower portion of the fin structure, a semiconductor oxide layer as a middle portion of the fin structure and a second semiconductor material layer as an upper portion of the fin structure. The semiconductor device also includes a dielectric feature disposed between two adjacent fin structures over the substrate. A top surface of the dielectric feature located, in a horizontal level, higher than the semiconductor oxide layer with a distance d. The semiconductor device also includes a high-k (HK)/metal gate (MG) stack disposed in the gate region, including wrapping over a portion of the fin structure. | 12-18-2014 |
20150035017 | Contact Structure of Semiconductor Device - The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin between the first fin and second fin; a first germanide over the first fin, wherein a first bottom surface of the first germanide has a first acute angle to the major surface; a second germanide over the second fin on a side of the third fin opposite to first germanide substantially mirror-symmetrical to each other; and a third germanide over the third fin, wherein a third bottom surface of the third germanide has a third acute angle to the major surface less than the first acute angle. | 02-05-2015 |
20150236016 | Contact Structure of Semiconductor Device - A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate. | 08-20-2015 |
20150311111 | Fin Structure of Semiconductor Device - The disclosure relates to a fin structure of a semiconductor device. An exemplary fin structure for a semiconductor device comprises a lower portion protruding from a major surface of a substrate, wherein the lower portion comprises a first semiconductor material having a first lattice constant; an upper portion having an interface with the lower portion, wherein the upper portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; a first pair of notches lower than the interface and extending into opposite sides of the lower portion, wherein each first notch have a first width; and a second pair of notches extending into opposite sides of the interface, wherein each second notch have a second width greater than the first width. | 10-29-2015 |
Patent application number | Description | Published |
20130154979 | TOUCH PANEL HAVING ELECTROSTATIC PROTECTION STRUCTURE - A touch panel having an electrostatic protection structure includes a transparent substrate, multiple sensing electrodes, a decoration layer and the electrostatic protection structure. The transparent substrate has an active region and a decoration region surrounding the active region. The sensing electrodes are formed on the active region. The decoration layer is disposed on the decoration region. The electrostatic structure includes a conductive ring. The conductive ring is disposed in surrounding arrangement corresponding to the decoration region and is located between the decoration layer and the transparent substrate. | 06-20-2013 |
20140138141 | PERIPHERAL CIRCUIT STRUCTURE - A peripheral circuit structure disposed on a substrate having an element region and a peripheral circuit region is provided. The peripheral circuit structure located in the peripheral circuit region includes first pads, second pads, a first trace, a second trace and third traces connected to the second pads and a device located in the element region. The first pads include a first ground pad and a second ground pad. The second pads are located between the first ground pad and the second ground pad. Two ends of the first trace are respectively electrically connected to the first ground pad and the second ground pad. Two ends of the second trace are respectively electrically connected to the first ground pad and the second ground pad, so that the second trace, the first trace, the first ground pad and the second ground form a closed loop. | 05-22-2014 |
20140159255 | CONTACT PAD STRUCTURE - A contact pad structure disposed on a peripheral region of a substrate is provided. The contact pad structure includes a transparent conductive pattern, a metal conductive pattern, and a protection layer. The transparent conductive pattern has a bonding region, a first side region, a second side region, a third side region and a fourth side region. The first, the second, the third, and the fourth side regions sequentially surround the bonding region. The metal conductive pattern without overlapping the bonding region has a first contact region, a second contact region and a first connection region. The first contact region contacts the first side region. The second contact region contact the third side region. The first connection region is connected between the first contact region and the second contact region. The protection layer covering the metal conductive pattern has a protection layer opening exposing the bonding region. | 06-12-2014 |
20140160708 | LEAD STRUCTURE - A lead structure disposed on a substrate is provided. The substrate includes a display area disposed with a device and a peripheral area disposed with a lead structure including first pads, a second pad, first traces and a second trace. The first traces are connected to the device. Each first trace has a first linear portion and a first bonding portion connected together. Each first trace is electrically connected to one of the first pads through the first bonding portion. The second trace has a second linear portion and a second bonding portion connected together. The second trace is electrically connected to the second pad through the second bonding portion. A width of the first linear portion is smaller than a width of the first bonding portion, and a width of the second linear portion is smaller than a width of the second bonding portion. | 06-12-2014 |
20150029423 | TOUCH PANEL - A touch panel is provided. The touch panel includes multiple sensing units, multiple connecting wires and multiple bridge wires. A part of the sensing units are arranged along a first direction, and another part of the sensing units are arranged along a second direction. A part of the connecting wires and a part of the bridge wires are connected to the part of the sensing units along the first direction. Another part of connecting wires and another part of bridge wires are connected to the another part of the sensing units along the second direction. The impedance value of each bridge wire is different from that of each connecting wire. | 01-29-2015 |
20150034472 | TOUCH PANEL - A touch panel includes a substrate, first conductive series, second conductive series, and insulation patterns. Each of the first conductive series includes first conductive patterns arranged in a first direction and first narrow portions, and each first narrow portion is connected to two adjacent first conductive patterns. The second conductive series are insulated from the first conductive series. Each of the second conductive series extends in a second direction and includes a plurality of intersections intersected with the first narrow portions. The insulation patterns are located between the first narrow portions and the intersections, so that one of the first narrow portions and a respective one of the intersections intersected with the one of the first narrow portions are separate. An edge of each of the insulation patterns and one of the first conductive patterns of each of the first conductive series partially overlap. | 02-05-2015 |
20150060254 | TOUCH PANEL AND MANUFACTURING METHOD THEREOF - A touch panel and a manufacturing method thereof are provided. The touch panel includes an insulating layer, a plurality of first conductive electrodes, a plurality of second conductive electrodes, a plurality of first auxiliary electrodes and a plurality of second auxiliary electrodes. The insulating layer has a plurality of through holes. The first conductive electrodes are arranged along a first direction and electrically connected with each other. The second conductive electrodes are arranged along a second direction and electrically connected with each other. The first auxiliary electrodes and the first conductive electrodes are electrically connected via part of the though holes. The second auxiliary electrodes and the second conductive electrodes are electrically connected via another of the though holes. | 03-05-2015 |
20150085205 | TOUCH PANEL - A touch panel includes a substrate, a plurality of first conductive elements, and a plurality of second conductive elements. Each of the first conductive elements includes a plurality of first conductive patterns and a plurality of first connection portions alternately connected with each other. The first conductive elements and the second conductive elements are intersected with each other and electrically insulated. Each of the second conductive elements includes a plurality of intersection portions respectively intersected with the first connection portions of each of the first conductive elements. A linewidth of the intersection portions is W1, and 100 μm03-26-2015 | |
20150109247 | TOUCH PANEL AND MANUFACTURING METHOD THEREOF - A touch panel and a manufacturing method thereof are provided. The touch panel includes a substrate, a plurality of conductive patterns, a plurality of signal transmitting lines, a plurality of first pad portions, a plurality of second pad portions and at least one auxiliary pattern. The first pad portions are separately arranged along a first path. The second pad portions are insulated from the first pad portions. The second pad portions are separately arranged along a second path. At least one auxiliary pattern is disposed between two adjacent first pad portions, between two adjacent second pad portions, or between one of the first pad portions and one of the second pad portions which are adjacent. The insulating intervals are disposed between adjacent first pad portions and between adjacent second pad portions. | 04-23-2015 |
Patent application number | Description | Published |
20120025389 | Hermetic Wafer Level Packaging - Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum-based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers. | 02-02-2012 |
20120043626 | MICROSTRUCTURE DEVICE WITH AN IMPROVED ANCHOR - The present disclosure provides a system of fabricating a microstructure device with an improved anchor. A method of fabricating a microstructure device with an improved anchor includes providing a substrate and forming an oxide layer on the substrate. Then, a cavity is etched in the oxide layer, such that the cavity includes a sidewall in the oxide layer. A microstructure device layer is then bonded to the oxide layer over the cavity. Forming a microstructure device, a trench is etched in the device layer to define an outer boundary of the microstructure device. In an embodiment, the outer boundary is substantially outside of the sidewall of the cavity. Then, the sidewall of the cavity is etched away through the trench in the device layer, to thereby suspend the microstructure device over the cavity. | 02-23-2012 |
20120061776 | WAFER LEVEL PACKAGING - A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer. | 03-15-2012 |
20120068276 | MICROSTRUCTURE WITH AN ENHANCED ANCHOR - The present disclosure provides a microstructure device with an enhanced anchor and a narrow air gap. One embodiment of a microstructure device provided herein includes a layered wafer. The layered wafer includes a silicon handle layer, a buried oxide layer formed on the handle layer, and a silicon device layer formed on the buried oxide layer. A top oxide layer is formed on the device layer. The top oxide layer, the device layer, and the buried oxide layer are etched, thereby forming trenches to create an anchor and a microstructure device in the device layer. In process of fabricating the device, a thermal oxide layer is formed along sides of the microstructure device to enclose the microstructure device in the buried oxide layer, the top oxide layer and the thermal oxide layer. Then, a poly layer if formed to fill in the trenches and enclose the anchor. After the poly layer fills in the trenches, the oxide layers enclosing the microstructure device are etched away, releasing the microstructure device. | 03-22-2012 |
20120074590 | MULTIPLE BONDING IN WAFER LEVEL PACKAGING - The present disclosure provides a method for fabricating a MEMS device including multiple bonding of substrates. In an embodiment, a method includes providing a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, providing a semiconductor substrate including a second bonding layer, and providing a cap including a third bonding layer. The method further includes bonding the MEMS substrate to the semiconductor substrate at the first and second bonding layers, and bonding the cap to the semiconductor substrate at the second and third bonding layers to hermetically seal the MEMS substrate between the cap and the semiconductor substrate. A MEMS device fabricated by the above method is also provided. | 03-29-2012 |
20120098074 | MEMS DEVICE WITH RELEASE APERTURE - The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided. | 04-26-2012 |
20120125747 | MEMS SWITCH WITH REDUCED DIELECTRIC CHARGING EFFECT - The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed. | 05-24-2012 |
20120161582 | MEMS KINETIC ENERGY CONVERSION - The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops. | 06-28-2012 |
20120187983 | FREQUENCY GENERATOR - A mechanical frequency generator has a first mechanical resonator and a second mechanical resonator and a circuit connected with the first and second mechanical resonators. The first and second mechanical resonators having substantially the same resonator frequency coefficients as a function of an environment of the first and the second mechanical resonators. The first mechanical resonator differing in size from the second mechanical resonator. The circuit adapted to generate a difference frequency signal responsive to the first and second mechanical resonator frequency signals and based on the first and the second predetermined resonant frequencies. | 07-26-2012 |
20120261830 | MEMS DEVICE ETCH STOP - The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer. | 10-18-2012 |
20120313235 | Semiconductor Devices With Moving Members and Methods for Making the Same - The present disclosure provides an embodiment of a micro-electro-mechanical system (MEMS) structure, the MEMS structure comprising a MEMS substrate; a first and second conductive plugs of a semiconductor material disposed on the MEMS substrate, wherein the first conductive plug is configured for electrical interconnection and the second conductive plug is configured as an anti-stiction bump; a MEMS device configured on the MEMS substrate and electrically coupled with the first conductive plug; and a cap substrate bonded to the MEMS substrate such that the MEMS device is enclosed therebetween. | 12-13-2012 |
20130099332 | WAFER LEVEL PACKAGING - A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer. | 04-25-2013 |
20130102101 | Wafer Level Packaging - A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer. | 04-25-2013 |
20130126989 | Microstructure Device with an Improved Anchor - A microelectromechanical system (MEMS) device includes a substrate and an oxide layer formed on the substrate. A cavity is etched in the oxide layer. A microstructure device layer is bonded to the oxide layer, over the cavity. The microstructure device layer includes a substantially solid microstructure MEMS device formed in the microstructure device layer and suspended over a portion of the cavity. An anchor is formed in the device layer and configured to support the microstructure device, the anchor having an undercut in the oxide layer. The undercut has a length along the anchor that is less than one-half a length of an outer boundary dimension of the microstructure MEMS device. | 05-23-2013 |
20130140653 | MEMS DEVICE ETCH STOP - The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer. | 06-06-2013 |
20130147317 | MEMS KINETIC ENERGY CONVERSION - The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, a piezoelectric element over the MEMS movable structure, and a magnet disposed over the plurality of metal loops. The MEMS movable structure, the plurality of metal loops, and the piezoelectric element are encapsulated. | 06-13-2013 |
20130285170 | MULTIPLE BONDING IN WAFER LEVEL PACKAGING - A MEMS device is described. The device includes a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, a semiconductor substrate including a second bonding layer, and a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer. The first bonding layer includes silicon, the semiconductor substrate is electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate. | 10-31-2013 |
20140154841 | Hermetic Wafer Level Packaging - Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum-based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers. | 06-05-2014 |
Patent application number | Description | Published |
20100039424 | METHOD OF REDUCING OFFSET VOLTAGE IN A MICROELECTROMECHANICAL DEVICE - A method of conditioning a microelectromechanical device is disclosed. In one embodiment the method comprises applying a conditioning signal to a microelectromechanical device having an offset voltage of a first sign, the conditioning signal having an average that is of a second sign which is opposite the first sign. In another embodiment the method comprises applying a conditioning signal to a microelectromechanical device having an offset voltage of a first value, the conditioning signal having an average of a second value which differs from the first value. | 02-18-2010 |
20120038021 | OVERLAY MARK ENHANCEMENT FEATURE - Methods and apparatuses for alignment are disclosed. An exemplary method includes providing a substrate having a device region and an alignment region; forming a first material layer over the substrate; forming a device feature and a dummy feature in the first material layer, wherein the device feature is formed in the device region and the dummy feature is formed in the alignment region; forming a second material layer over the first material layer; and forming an alignment feature in the second material layer, the alignment feature being disposed over the dummy feature in the alignment region. The device feature has a first dimension and the dummy feature has a second dimension, the second dimension being less than a resolution of an alignment mark detector | 02-16-2012 |
20120153441 | OVERLAY MARK ENHANCEMENT FEATURE - An integrated circuit device includes a semiconductor substrate having a device region and an alignment region. A first material layer is disposed over the semiconductor substrate, and includes a device feature in the device region and a dummy feature in the alignment region. A dimension of the dummy feature is less than a dimension of an alignment detector. A second material layer is disposed over the semiconductor substrate, and includes an alignment feature in the alignment region. The alignment feature disposed over the dummy feature. | 06-21-2012 |
20130213139 | MEMS VACUUM LEVEL MONITOR IN SEALED PACKAGE - A vacuum sensor for sensing vacuum in a sealed enclosure is provided. The sealed enclosure includes active MEMS devices desired to be maintained in vacuum conditions. The vacuum sensor includes a motion beam anchored to an internal surface in the sealed enclosure. A driving electrode is disposed beneath the motion beam and a bias is supplied to cause the motion beam to deflect through electromotive force. A sensing electrode is also provided and detects capacitance between the sensing electrode disposed on the internal surface, and the motion beam. Capacitance changes as the gap between the motion beam and the sensing electrode changes. The amount of deflection is determined by the vacuum level in the sealed enclosure. The vacuum level in the sealed enclosure is thereby sensed by the sensing electrode. | 08-22-2013 |
20130264610 | TEMPERATURE STABILITIZED MEMS - A semiconductor device with temperature control system. Embodiments of the device may include a MEMS chip including a first heater with a dedicated first temperature control loop and a CMOS chip including a second heater with a dedicated second temperature control loop. Each control loop may have a dedicated temperature sensor for controlling the thermal output of each heater. The first heater and sensor are disposed proximate to a MEMS device in the MEMS chip for direct heating thereof. The temperature of the MEMS chip and CMOS chip are independently controllable of each other via the temperature control loops. | 10-10-2013 |
20140151821 | MEMS STRUCTURE WITH ADAPTABLE INTER-SUBSTRATE BOND - A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor. | 06-05-2014 |
20140206123 | Dual Layer Microelectromechanical Systems Device and Method of Manufacturing Same - Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device. | 07-24-2014 |
20140287548 | MEMS Device with Release Aperture - The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided. | 09-25-2014 |
20140331484 | MEMS Switch with Reduced Dielectric Charging Effect - The present disclosure provides methods of fabricating a micro-electro-mechanical systems (MEMS) switch. The methods include providing a substrate, forming a first dielectric layer disposed above the substrate, forming a bump above the first dielectric layer, providing a movable member including a top actuation electrode, and forming at least one support member that includes the first dielectric layer and is directly below the top actuation electrode. The top actuation electrode is electrically coupled to the bump. | 11-13-2014 |
20140353776 | MEMS Structure with Adaptable Inter-Substrate Bond - A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor. | 12-04-2014 |
20150116679 | MECHANISMS FOR PERFORMING A PHOTOLITHOGRAPHY PROCESS - Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process. | 04-30-2015 |
20150122038 | PRESSURE SENSOR - A pressure sensor comprises a first substrate containing a processing circuit integrated thereon and a cap attached to the first substrate. The cap includes a container, a holder, and one or more suspension elements for suspending the container from the holder. The container includes a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. The container is suspended from the holder such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit. | 05-07-2015 |
20150122041 | PRESSURE SENSOR - A pressure sensor comprises a first substrate and a cap attached to the first substrate. The cap includes a processing circuit, a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit. The cap is attached to the first substrate such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. The first substrate comprises a support portion the cap is attached to, a contact portion for electrically connecting the pressure sensor to an external device, and one or more suspension elements for suspending the support portion from the contact portion. | 05-07-2015 |
20150122042 | PRESSURE SENSOR - A pressure sensor comprises a first substrate and a cap attached to the first substrate. The cap includes a processing circuit, a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit. The cap is attached to the first substrate such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. The first substrate comprises a support portion the cap is attached to, a contact portion for electrically connecting the pressure sensor to an external device, and one or more suspension elements for suspending the support portion from the contact portion. | 05-07-2015 |
20150217996 | Dual Layer Microelectromechanical Systems Device and Method of Manufacturing Same - Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device. | 08-06-2015 |
Patent application number | Description | Published |
20130168852 | MEMS Devices and Methods of Forming Same - A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches. | 07-04-2013 |
20130334620 | MEMS Devices and Fabrication Methods Thereof - A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate. | 12-19-2013 |
20140042562 | MEMS Devices and Methods for Forming the Same - A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion. | 02-13-2014 |
20140103461 | MEMS Devices and Fabrication Methods Thereof - A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate. | 04-17-2014 |
20150158723 | MEMS Devices and Methods of Forming Same - A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches. | 06-11-2015 |
Patent application number | Description | Published |
20140109958 | METHOD OF IN-SITU FABRICATING INTRINSIC ZINC OXIDE LAYER AND THE PHOTOVOLTAIC DEVICE THEREOF - A method of fabricating a photovoltaic device includes forming an absorber layer for photon absorption over a substrate, forming a buffer layer above the absorber layer, wherein both the absorber layer and the buffer layer are semiconductors, and forming a layer of intrinsic zinc oxide above the buffer layer through a hydrothermal reaction in a solution of a zinc-containing salt and an alkaline chemical. | 04-24-2014 |
20140130856 | MOLYBDENUM SELENIDE SUBLAYERS WITH CONTROLLED THICKNESS IN SOLAR CELLS AND METHODS FOR FORMING THE SAME - A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer. | 05-15-2014 |
20140144769 | SPUTTERING APPARATUS AND METHOD - A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape. | 05-29-2014 |
20140206132 | METHOD FOR INDIUM SPUTTERING AND FOR FORMING CHALCOPYRITE-BASED SOLAR CELL ABSORBER LAYERS - A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a | 07-24-2014 |
20140352751 | SOLAR CELL OR TANDEM SOLAR CELL AND METHOD OF FORMING SAME - A solar cell includes an absorber layer, a buffer layer on the absorber layer, a front contact layer where a glass substrate, a back contact layer on the glass substrate, the absorber layer on the back contact layer, the buffer layer, and the front contact layer are manufactured as a first module at a temperature exceeding 500 degrees Celsius. The solar further includes an extracted portion from the first module where the extracted portion includes the absorber layer, the buffer layer, and the front contact layer, and where the extracted portion is applied to a flexible substrate or other substrate. | 12-04-2014 |
20140360864 | APPARATUS AND METHODS FOR FORMING CHALCOPYRITE LAYERS ONTO A SUBSTRATE - A method generally comprises providing heat to a substrate in at least one buffer chamber and transferring the substrate to at least one deposition chamber that is coupled to the buffer chamber via an conveyor. The method also includes depositing a first set of a plurality of elements, using sputtering, and a second set of a plurality of elements, using evaporation, onto at least a portion of the substrate in the deposition chamber. | 12-11-2014 |
20140370623 | EVAPORATION APPARATUS AND METHOD - An evaporation apparatus comprises a chamber configured to contain at least one dispensing nozzle and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one dispensing nozzle and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape. The at least one adjustable shielding member has a heater. | 12-18-2014 |
20150044814 | APPARATUS AND METHOD FOR FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBER MATERIALS WITH SODIUM IMPURITIES - A method and system for forming chalcogenide semiconductor absorber materials with sodium impurities is provided. The system includes a sodium vaporizer in which a solid sodium source material is vaporized. The sodium vapor is added to reactant gases and/or annealing gases and directed to a furnace that includes a substrate with a metal precursor material. The precursor material reacts with reactant gases such as S-containing gases and Se-containing gases according to various process sequences. In one embodiment, a selenization operation is followed by an annealing operation and a sulfurization operation and the sodium vapor is caused to react with the metal precursor during at least one of the annealing and the sulfurization steps to produce a chalcogenide semiconductor absorber material that includes sodium dopant impurities. | 02-12-2015 |
20150050772 | METHOD OF FORMING CHALCOPYRITE THIN FILM SOLAR CELL - In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate. | 02-19-2015 |
20150059850 | PHOTOVOLTAIC DEVICE WITH BACK REFLECTOR - A device and method of improving efficiency of a thin film solar cell by providing a back reflector between a back electrode layer and an absorber layer. Back reflector reflects sunlight photons back into the absorber layer to generate additional electrical energy. The device is a photovoltaic device comprising a substrate, a back electrode layer, a back reflector, an absorber layer, a buffer layer, and a front contact layer. The back reflector is formed as a plurality of parallel lines. | 03-05-2015 |
20150079717 | APPARATUS AND METHODS FOR FABRICATING SOLAR CELLS - A method for fabricating a solar cell generally comprises delivering a solar cell substructure to a chamber. Electromagnetic radiation is generated using a wave generating device that is coupled to the chamber such that the wave generating device is positioned proximate to the solar cell substructure. The electromagnetic radiation is applied onto at least a portion of the solar cell substructure to facilitate the diffusion of at least one metal element through at least a portion of the solar cell substructure such that a semiconductor interface is formed between at least two different types of semiconductor materials of the solar cell substructure. | 03-19-2015 |
Patent application number | Description | Published |
20080213529 | System and Method for Floor Covering Installation - Connectors for joining adjacent modular floor covering units. Embodiments of the connectors include a film and an adhesive layer coated on one side of the film. The connectors can have a conductive component that allows electrical continuity to be maintained between adjacent tiles. In yet another embodiment, the connectors can be equipped as radio frequency identification tags by including radio frequency transponders. To install tiles using the connectors, a first tile is placed on the floor and a connector is positioned so that the adhesive layer faces upward and does not contact the floor. The connector is typically positioned so that only a portion of the adhesive layer adheres to the underside of the tile, leaving the remainder of the connector extending from the underside of the tile. One or more tiles are then positioned adjacent the first tile so that a portion of the connector adheres to the adjacent tiles. In this way, the connectors span adjacent tile edges. The tiles are assembled on an underlying flooring surface without the need to attach them to the floor surface. Rather, the tiles are linked to each other with the connectors, so that the tiles create a floor covering that “floats” on the underlying floor surface. Additionally, the tiles need not be installed directly on the floor surface. Rather, an underlayment, such as a film or cushion or cushion composite, may be positioned on the floor surface prior to the installation of tiles. | 09-04-2008 |
20100024329 | System and Method for Floor Covering Installation - Connectors for joining adjacent modular floor covering units. Embodiments of the connectors include a film and an adhesive layer coated on one side of the film. The connectors can have a conductive component that allows electrical continuity to be maintained between adjacent tiles. In yet another embodiment, the connectors can be equipped as radio frequency identification tags by including radio frequency transponders. To install tiles using the connectors, a first tile is placed on the floor and a connector is positioned so that the adhesive layer faces upward and does not contact the floor. The connector is typically positioned so that only a portion of the adhesive layer adheres to the underside of the tile, leaving the remainder of the connector extending from the underside of the tile. One or more tiles are then positioned adjacent the first tile so that a portion of the connector adheres to the adjacent tiles. In this way, the connectors span adjacent tile edges. The tiles are assembled on an underlying flooring surface without the need to attach them to the floor surface. Rather, the tiles are linked to each other with the connectors, so that the tiles create a floor covering that “floats” on the underlying floor surface. Additionally, the tiles need not be installed directly on the floor surface. Rather, an underlayment, such as a film or cushion or cushion composite, may be positioned on the floor surface prior to the installation of tiles. | 02-04-2010 |
20100176189 | SYSTEM AND METHOD FOR FLOOR COVERING INSTALLATION - Connectors for joining adjacent modular floor covering units. Embodiments of the connectors include a film and an adhesive layer coated on one side of the film. The connectors can have a conductive component that allows electrical continuity to be maintained between adjacent tiles. In yet another embodiment, the connectors can be equipped as radio frequency identification tags by including radio frequency transponders. To install tiles using the connectors, a first tile is placed on the floor and a connector is positioned so that the adhesive layer faces upward and does not contact the floor. The connector is typically positioned so that only a portion of the adhesive layer adheres to the underside of the tile, leaving the remainder of the connector extending from the underside of the tile. One or more tiles are then positioned adjacent the first tile so that a portion of the connector adheres to the adjacent tiles. In this way, the connectors span adjacent tile edges. The tiles are assembled on an underlying flooring surface without the need to attach them to the floor surface. Rather, the tiles are linked to each other with the connectors, so that the tiles create a floor covering that “floats” on the underlying floor surface. Additionally, the tiles need not be installed directly on the floor surface. Rather, an underlayment, such as a film or cushion or cushion composite, may be positioned on the floor surface prior to the installation of tiles. | 07-15-2010 |